-
公开(公告)号:US20210271162A1
公开(公告)日:2021-09-02
申请号:US17314321
申请日:2021-05-07
Applicant: FUJIFILM Corporation
Inventor: Keiyu OU , Naohiro Tango , Hidenori Takahashi , Akiyoshi Goto , Takeshi Kawabata , Tsutomu Yoshimura
IPC: G03F7/004 , G03F7/038 , G03F7/039 , C08F220/28 , C08F220/18
Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition, in which the cross-sectional shape of a pattern thus formed has excellent rectangularity and a dimensional variation of the line width of the pattern thus formed hardly occurs even over time after preparation. Furthermore, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.
The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases through decomposition by an action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a halogen-based solvent, in which a content of the halogen-based solvent is from 1 ppb by mass to 50 ppm by mass with respect to a total mass of the composition.-
12.
公开(公告)号:US20180120706A1
公开(公告)日:2018-05-03
申请号:US15851703
申请日:2017-12-21
Applicant: FUJIFILM Corporation
Inventor: Michihiro SHIRAKAWA , Keiyu OU , Naoya HATAKEYAMA , Akiyoshi GOTO , Keita KATO , Takashi YAKUSHIJI , Tadashi OMATSU
IPC: G03F7/36 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/20 , B32B27/18 , C08F212/04 , C08F220/06
CPC classification number: G03F7/36 , B32B27/18 , C08F12/24 , C08F212/04 , C08F212/14 , C08F220/06 , C09D125/18 , G03F7/038 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/0752 , G03F7/0757 , G03F7/0758 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/325 , C08F212/32
Abstract: Provided are a pattern forming method including (1) a step of forming a resist underlayer film on a substrate to be processed, (2) a step of forming a resist film on the resist underlayer film, using a resist composition containing (A) a resin having a repeating unit containing a Si atom, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (3) a step of exposing the resist film, (4) a step of developing the exposed resist film using a developer including an organic solvent, thereby forming a negative tone resist pattern, and (5) a step of processing the resist underlayer film and the substrate to be processed, using the resist pattern as a mask, thereby forming a pattern, in which the content of the resin (A) is 20% by mass or more with respect to the total solid content of the resist composition.
-
公开(公告)号:US20170192355A1
公开(公告)日:2017-07-06
申请号:US15467357
申请日:2017-03-23
Applicant: FUJIFILM Corporation
Inventor: Masafumi KOJIMA , Akiyoshi GOTO , Akinori SHIBUYA , Keita KATO , Keiyu OU
IPC: G03F7/038 , G03F7/20 , G03F7/38 , G03F7/004 , G03F7/40 , H01L21/027 , C08F220/18 , G03F7/09 , G03F7/16 , G03F7/32
CPC classification number: G03F7/038 , C08F220/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/091 , G03F7/11 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/325 , G03F7/327 , G03F7/38 , G03F7/40 , H01L21/027
Abstract: The present invention has an object to provide a method for forming a negative tone pattern in which shrinkage of a film in post exposure bake is suppressed; a method for manufacturing an electronic device including the pattern forming method; and an active-light-sensitive or radiation-sensitive resin composition. The method for forming a negative tone pattern of the present invention includes: a film formation step of forming an active-light-sensitive or radiation-sensitive resin composition film on a substrate, using a resist composition; an exposing step of irradiating the film with active light or radiation; a heating treatment step of performing a heating treatment on the film irradiated with active light or radiation; and a developing step of developing the heating-treated film using a developer including an organic solvent, in which the resist composition includes a resin A having a repeating unit A with a group represented by a specific formula, a resin B having a repeating unit B with a group represented by a specific formula, and a compound that generates an acid upon irradiation with active light or radiation.
-
公开(公告)号:US20170168394A1
公开(公告)日:2017-06-15
申请号:US15444471
申请日:2017-02-28
Applicant: FUJIFILM Corporation
Inventor: Akiyoshi GOTO , Masafumi KOJIMA , Keita KATO , Keiyu OU , Michihiro SHIRAKAWA
IPC: G03F7/038 , G03F7/16 , G03F7/38 , C08F220/36 , G03F7/40 , G03F7/20 , C08F220/28 , C08F220/18 , G03F7/004 , G03F7/32
CPC classification number: G03F7/038 , C08F220/18 , C08F220/24 , C08F220/26 , C08F220/28 , C08F220/36 , C08F228/06 , C08F230/08 , C08F2220/282 , C08F2220/283 , C08F2220/365 , G03F7/004 , G03F7/0045 , G03F7/0397 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/327 , G03F7/38 , G03F7/40 , H01L21/0274 , C08F2220/1858 , C08F2220/1866 , C08F2220/185 , C08F2220/1825 , C08F2220/1875 , C08F2230/085 , C08F220/22
Abstract: The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.
-
公开(公告)号:US20170097565A1
公开(公告)日:2017-04-06
申请号:US15384521
申请日:2016-12-20
Applicant: FUJIFILM Corporation
Inventor: Shohei KATAOKA , Akinori SHIBUYA , Keiyu OU
CPC classification number: G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/325 , G03F7/38 , G03F7/40
Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a basic compound (A) corresponding to at least one of the following basic compound (A1) or (A2): (A1) a nonionic compound having an alicyclic structure (a1) and a basic site (b2) at a site different from the alicyclic structure within one molecule, or (A2) a nonionic compound having a heterocyclic structure (a2) having no basicity and a basic site (b2) at a site different from the heterocyclic structure within one molecule.
-
-
-
-