公开(公告)号：US6040736A

公开(公告)日：2000-03-21

申请号：US984959

申请日：1997-12-04

申请人： Andrea Milanesi ,  Vanni Poletto ,  Alberto Poma ,  Marco Morelli

发明人： Andrea Milanesi ,  Vanni Poletto ,  Alberto Poma ,  Marco Morelli

IPC分类号： G05F1/575 ,  G05F1/10

CPC分类号： G05F1/575

摘要： A voltage-regulator circuit with a low voltage drop uses a DMOS power transistor driven by a charge pump. The control circuit includes two feedback loops: a first feedback loop having a high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed, but low gain.

摘要翻译： 具有低压降的电压调节器电路使用由电荷泵驱动的DMOS功率晶体管。 控制电路包括两个反馈回路：具有高增益和精度但低响应速度的第一反馈回路，以及具有宽通带和快速响应速度但低增益的第二反馈回路。

公开(公告)号：US5920255A

公开(公告)日：1999-07-06

申请号：US902558

申请日：1997-07-29

申请人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

发明人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

IPC分类号： G01F23/00 ,  G01F23/30 ,  B60Q1/00

CPC分类号： G01F23/0061 ,  G01F23/30

摘要： The electronic interface circuit can perform ratiometric processing and driving of a signal generated by a fuel-level detector of a vehicle. The circuit uses a current mirror configured so as to send one half of the output current to the input resistance and one half of the output current to earth. The current mirror is controlled by a voltage taken from the input resistance and by a voltage taken from a resistive divider, the latter voltage having been filtered by a low-pass filter, so as to achieve ratiometric processing of the input signal.

摘要翻译： 电子接口电路可以执行比例计算处理和驱动由车辆的燃料液位检测器产生的信号。 该电路使用电流镜，配置为将输出电流的一半发送到输入电阻，输出电流的一半输出到地。 电流镜由从输入电阻取得的电压和从电阻分压器获取的电压来控制，后一电压已被低通滤波器滤波，以便实现输入信号的比例处理。

公开(公告)号：US5912617A

公开(公告)日：1999-06-15

申请号：US929810

申请日：1997-09-15

申请人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

发明人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

IPC分类号： G01F23/00 ,  H03K17/945 ,  B60Q1/00

CPC分类号： H03K17/945 ,  G01F23/0069 ,  G01F23/0084

摘要： A circuit for controlling the reserve lamp of a vehicle's fuel level indicator instrument. The circuit uses a switch controlled by an extremely asymmetric clock signal periodically to switch, for a very short time, the signal provided by the level sensor coupled to a comparator operable to compare this signal with a threshold value for the purpose of determining the state of the reserve lamp.

摘要翻译： 一种用于控制车辆燃料液位指示器的储备灯的电路。 该电路使用由非常不对称的时钟信号控制的开关周期性地在非常短的时间内切换耦合到比较器的电平传感器提供的信号，该比较器可用于将该信号与阈值进行比较，以便确定 备用灯。

公开(公告)号：US5404053A

公开(公告)日：1995-04-04

申请号：US75056

申请日：1993-06-09

申请人： Alberto Poma ,  Vanni Poletto ,  Marco Morelli

发明人： Alberto Poma ,  Vanni Poletto ,  Marco Morelli

IPC分类号： H01L27/06 ,  H03F1/52 ,  H03K17/06 ,  H03K17/082 ,  H03K17/60 ,  H03K3/26

CPC分类号： H03K17/0822 ,  H03F1/523 ,  H03K17/063

摘要： An improved circuit for controlling the maximum current in a MOS power transistor, in which resistor is in series with the drain-source path of the MOS power transistor. The supply terminal of a transconductance operational amplifier is connected to the output of a voltage-raising or charge pump circuit which can output a voltage higher than that of the voltage supply to which the drain of the MOS transistor is connected. The inputs of the amplifier are connected to the resistor and its output is connected to the gate of the MOS transistor so that, in operation, the maximum current flowing through the power transistor is limited to a value proportional to a reference voltage.

摘要翻译： 一种用于控制MOS功率晶体管中的最大电流的改进电路，其中电阻器与MOS功率晶体管的漏极 - 源极路径串联。 跨导运算放大器的供电端子连接到升压或电荷泵电路的输出，该电压可以输出比MOS晶体管的漏极连接的电压高的电压。 放大器的输入连接到电阻器，其输出端连接到MOS晶体管的栅极，使得在工作中流过功率晶体管的最大电流被限制为与参考电压成比例的值。

公开(公告)号：US20100134101A1

公开(公告)日：2010-06-03

申请号：US12628448

申请日：2009-12-01

申请人： CATERINA RIVA ,  Marco Morelli ,  Marco Marchesi

发明人： CATERINA RIVA ,  Marco Morelli ,  Marco Marchesi

IPC分类号： G01R33/06

CPC分类号： G01R33/05 ,  G01R33/07

摘要： A magnetic sensor is formed by a fluxgate sensor and by at least one Hall sensor integrated in a same integrated device, wherein the magnetic core of the fluxgate sensor is formed by a magnetic region that operates also as a concentrator for the Hall sensor. The magnetic region is manufactured in a post-machining stage on the metallization layers wherein the energizing coil and sensing coil of the fluxgate sensor are formed; the energizing and sensing coils are formed on a semiconductor substrate housing the conductive regions of the Hall sensor.

摘要翻译： 磁传感器由磁通门传感器和集成在同一集成器件中的至少一个霍尔传感器形成，其中磁通门传感器的磁芯由还用作霍尔传感器的集中器的磁区形成。 在金属化层的后加工阶段制造磁性区域，其中形成磁通门传感器的激励线圈和感测线圈; 激励和感测线圈形成在容纳霍尔传感器的导电区域的半导体衬底上。

公开(公告)号：US5510947A

公开(公告)日：1996-04-23

申请号：US367747

申请日：1995-01-03

申请人： Franco Pellegrini ,  Marco Morelli ,  Athos Canclini

发明人： Franco Pellegrini ,  Marco Morelli ,  Athos Canclini

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H03K17/08 ,  H03K19/003 ,  H02H9/04

CPC分类号： H01L27/0248

摘要： In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.

摘要翻译： 在防静电保护结构中，特别针对目的地达到低于地和/或高于电源电压的引脚设计，包括一对齐纳二极管或侧向NPN结构，其具有基极和发射极之间的电阻连接， 待保护的引脚和集成电路的接地基板。 通过在内部寄生晶体管的触发引起的保护结构通过引脚引出/注入的漏电流的放大效应通过在诸如正向偏置结之间的偏置元件之间连接在第 两个齐纳边的NPN结构和集成电路的一个节点，其偏压电压足够高，以确保在任何条件下寄生晶体管的基极 - 发射极的反偏置。

公开(公告)号：US5258723A

公开(公告)日：1993-11-02

申请号：US919991

申请日：1992-07-27

申请人： Michelangelo Mazzucco ,  Vanni Poletto ,  Marco Morelli

发明人： Michelangelo Mazzucco ,  Vanni Poletto ,  Marco Morelli

IPC分类号： G01N27/409 ,  H03F1/08 ,  H03F3/34 ,  H03F3/347 ,  H03F3/45

CPC分类号： H03F1/083 ,  H03F3/45479 ,  H03F2200/261

摘要： An amplifier including first and second input transistors which are connected to respective first and second feedback amplification circuits associated with respective frequency-compensating capacitances. The second feedback amplification circuit has a two-stage structure and includes an internal compensating capacitance. The three frequency-compensating capacitances can have low values and can thus conveniently be integrated in the same chip as the amplifier. The amplifier can be used, in particular, as an interface between a zirconium-dioxide oxygen sensor and an electronic control unit which have different earth conductors.

公开(公告)号：US5036269A

公开(公告)日：1991-07-30

申请号：US458373

申请日：1989-12-28

申请人： Bruno Murari ,  Marco Morelli ,  Giampietro Maggioni

发明人： Bruno Murari ,  Marco Morelli ,  Giampietro Maggioni

IPC分类号： G05F1/56 ,  G05F1/571

CPC分类号： G05F1/571

摘要： A voltage stabilizer with a very low voltage drop includes a series voltage regulator circuit having a first PNP transistor connected to an input terminal of the stabilizer via a second PNP transistor and being connected to ground via a capacitor. The stabilizer has biasing and switching circuits disposed between the input terminal thereof, a base terminal of the second transistor and ground.

公开(公告)号：US4801860A

公开(公告)日：1989-01-31

申请号：US159290

申请日：1988-02-23

申请人： Bruno Murari ,  Marco Morelli

发明人： Bruno Murari ,  Marco Morelli

IPC分类号： G05F1/56 ,  G05F1/571

CPC分类号： G05F1/571 ,  G05F1/56

摘要： A voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients includes a "series" type voltage regulator circuit with an NPN power transistor. The collector terminal of this transistor is connected to ground via a capacitor and to the cathode of a diode whose anode forms an input terminal of the stabilizer. The base terminal of the power transistor is connected to the collector terminals of first and second PNP transistors which have their emitter terminals respectively connected to the cathode and anode of the diode and their base terminals connected to a circuit biasing circuit.

公开(公告)号：US4786827A

公开(公告)日：1988-11-22

申请号：US879160

申请日：1986-06-26

申请人： Roberto Gariboldi ,  Marco Morelli

发明人： Roberto Gariboldi ,  Marco Morelli

IPC分类号： H01L27/082 ,  G05F1/56 ,  G05F1/569 ,  H01L21/8222 ,  H03K17/0422 ,  H03K3/33 ,  G05F1/40 ,  H03K3/01

CPC分类号： H03K17/0422 ,  G05F1/569

摘要： Described is an antisaturation circuit for an integrated PNP transistor characterized by a comparator circuit comprising two transistors and a current generator whose output current corresponds to a pre-established function, e.g., an exponential function, of the emitter current of said transistor. The changing of state of the comparator circuit, as determined by said pre-established function of said current generator, is determined by the drop of the V.sub.CE voltage of the transistor below a preset minimum value, with a portion of the conduction current of one of the two transistors of the comparator circuit utilized for increasing the forced .beta. of the transistor. This limits the degree of its saturation, as well as the leakage current toward the substrate.

摘要翻译： 描述了用于集成PNP晶体管的抗饱和电路，其特征在于包括两个晶体管的比较器电路和电流发生器，其输出电流对应于所述晶体管的发射极电流的预先建立的功能，例如指数函数。 由所述电流发生器的所述预先建立的功能确定的比较器电路的状态的改变由晶体管的VCE电压降到预定的最小值以下，其中导电电流的一部分为 比较器电路的两个晶体管用于增加晶体管的强制β。 这限制了其饱和度以及朝向衬底的漏电流。