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    PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING
    12.
    发明申请
    PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
    电化学机械抛光过程中用于剥离基材的方法和组合

    公开(公告)号：US20070144915A1

    公开(公告)日：2007-06-28

    申请号：US11613918

    申请日：2006-12-20

    申请人： Yuan Tian ,  Renhe Jia ,  Feng Liu ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Robert Ewald

    发明人： Yuan Tian ,  Renhe Jia ,  Feng Liu ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Robert Ewald

    IPC分类号： B23H7/00 ,  H05K3/07

    CPC分类号： C25F3/02 ,  B23H5/08 ,  H01L21/32125

    摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a method of electrochemically processing a substrate using a conductive polishing article is provided. The method includes disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising a cathode coupled to the conductive polishing article and an anode, wherein the substrate is in electrical contact with the anode, supplying a polishing composition comprising a cathodic inhibitor and an anodic inhibitor, forming a protective film on the cathode to prevent corrosion of the cathode, and polishing the substrate. In another embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes a corrosion inhibitor selected from the group of an amino acid based inhibitor, a polymeric based corrosion inhibitor, an oxidizer, a chelating inhibitor or combinations thereof.

    摘要翻译： 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施例中，提供了使用导电抛光制品电化学处理衬底的方法。 该方法包括将包括形成在其上的导电材料层的衬底放置在包括耦合到导电抛光制品的阴极和阳极的处理装置中，其中衬底与阳极电接触，提供包含阴极抑制剂的抛光组合物， 阳极抑制剂，在阴极上形成保护膜以防止阴极腐蚀，并抛光衬底。 在另一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括选自氨基酸基抑制剂，聚合物基腐蚀抑制剂，氧化剂，螯合抑制剂或组合的腐蚀抑制剂 其中。

    Planarization of substrates at a high polishing rate using electrochemical mechanical polishing
    13.
    发明申请
    Planarization of substrates at a high polishing rate using electrochemical mechanical polishing 审中-公开
    使用电化学机械抛光以高抛光速率平铺基板

    公开(公告)号：US20070243709A1

    公开(公告)日：2007-10-18

    申请号：US11404524

    申请日：2006-04-14

    申请人： Alain Duboust ,  Wei-Yung Hsu ,  Feng Liu ,  Yan Wang ,  Zhihong Wang

    发明人： Alain Duboust ,  Wei-Yung Hsu ,  Feng Liu ,  Yan Wang ,  Zhihong Wang

    IPC分类号： H01L21/461 ,  B23H9/00

    CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D11/34 ,  C25F1/04 ,  H01L21/32125

    摘要： A method and apparatus for removing conductive material from a substrate surface are provided. In one embodiment, a method is provided for electrochemical mechanical polishing of a substrate. A substrate comprising dielectric feature definitions, a barrier material disposed on the feature definitions, and a bulk conductive material in an amount sufficient to fill the feature definitions is provided. The substrate is exposed to an electrolyte solution. A passivation layer is formed on the conductive material. The passivation strength of the passivation layer is increased by polishing the substrate with a first voltage for a first time period. The substrate is polished with a second voltage higher than the first voltage for a second time period. Conductive material is removed from at least a portion of the substrate surface by anodic dissolution.

    摘要翻译： 提供了用于从基板表面去除导电材料的方法和装置。 在一个实施例中，提供了一种用于衬底的电化学机械抛光的方法。 提供了包括介电特征定义的基板，设置在特征定义上的阻挡材料以及足以填充特征定义的量的体导电材料。 将基底暴露于电解质溶液。 在导电材料上形成钝化层。 通过用第一时间段的第一电压抛光衬底来增加钝化层的钝化强度。 在第二时间段内以比第一电压高的第二电压来抛光衬底。 通过阳极溶解从导电材料的至少一部分去除导电材料。

    Polishing method that suppresses hillock formation
    14.
    发明申请
    Polishing method that suppresses hillock formation 审中-公开
    抑制小丘形成的抛光方法

    公开(公告)号：US20070235345A1

    公开(公告)日：2007-10-11

    申请号：US11400454

    申请日：2006-04-07

    申请人： Tianbao Du ,  Feng Liu ,  May Yu ,  Alan Duboust ,  Wei-Yung Hsu

    发明人： Tianbao Du ,  Feng Liu ,  May Yu ,  Alan Duboust ,  Wei-Yung Hsu

    IPC分类号： B23H5/08

    CPC分类号： B23H5/08 ,  B24B37/04 ,  C25F3/02 ,  H01L21/321 ,  H01L21/32125 ,  H01L21/7684

    摘要： An ECMP method that suppresses hillock formation on a substrate includes the step of buffing a substrate before a two-step electrochemical mechanical polishing process. The buffing step prevents hillocks from forming around the features of the substrate and does not interfere with the protrusion formation. The buffing step includes contacting the substrate with a polishing pad and rotating the substrate and the polishing pad in opposite directions.

    摘要翻译： 抑制基板上的小丘形成的ECMP方法包括在两步电化学机械抛光工艺之前抛光基板的步骤。 抛光步骤防止小丘围绕衬底的特征形成，并且不会妨碍突起形成。 抛光步骤包括使基板与抛光垫接触，并以相反的方向旋转基板和抛光垫。

    Method and apparatus for reduced wear polishing pad conditioning
    19.
    发明申请
    Method and apparatus for reduced wear polishing pad conditioning 失效
    降低磨损抛光垫调理的方法和装置

    公开(公告)号：US20060046623A1

    公开(公告)日：2006-03-02

    申请号：US11209167

    申请日：2005-08-22

    申请人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    发明人： Yan Wang ,  Stan Tsai ,  Yongqi Hu ,  Feng Liu ,  Liang-Yuh Chen ,  Daxin Mao ,  Huyen Tran ,  Martin Wohlert ,  Renhe Jia ,  Yuan Tian

    IPC分类号： B24B1/00

    CPC分类号： B24B53/017 ,  B23H5/08

    摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

    摘要翻译： 提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。 在一个实施例中，调节头包括设置在中心腔中的刷子。 清洁流体通过调节头的中心空腔设置到处理垫。 刷子旋转并横向移动到处理垫的表面上。 通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻地擦拭处理垫。 调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。 清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

    Method and composition for polishing a substrate
    20.
    发明申请
    Method and composition for polishing a substrate 审中-公开
    抛光基材的方法和组合物

    公开(公告)号：US20060021974A1

    公开(公告)日：2006-02-02

    申请号：US10948958

    申请日：2004-09-24

    申请人： Feng Liu ,  Stan Tsai ,  Martin Wohlert ,  Yuan Tian ,  Renhe Jia ,  Yongqi Hu ,  Liang-Yuh Chen

    发明人： Feng Liu ,  Stan Tsai ,  Martin Wohlert ,  Yuan Tian ,  Renhe Jia ,  Yongqi Hu ,  Liang-Yuh Chen

    IPC分类号： C03C15/00 ,  C09K13/00

    CPC分类号： H01L21/7684 ,  C25F3/16 ,  C25F3/26 ,  H01L21/32125

    摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供一种组合物，用于从包括硫酸或衍生物，磷酸或衍生物的底物表面至少去除导电材料，包括有机盐的第一螯合剂，pH调节剂以提供约2 约10和溶剂。 组合物还可以包括第二螯合剂。 组合物可以用于单步或两步电化学机械平面化工艺。 本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。