摘要:
Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要:
Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.
摘要:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要:
A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.
摘要:
Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要:
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including one or more inorganic acids, a pH adjusting agent, a chelating agent, a passivating polymeric material, a pH between about 5 and about 10, and a solvent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.
摘要:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要:
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.