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34 条记录 (耗时 0.024 秒)

    Use of CMP for aluminum mirror and solar cell fabrication
    11.
    发明授权
    Use of CMP for aluminum mirror and solar cell fabrication 有权
    使用CMP用于铝镜和太阳能电池制造

    公开(公告)号：US08062096B2

    公开(公告)日：2011-11-22

    申请号：US11173518

    申请日：2005-06-30

    申请人： Vlasta Brusic ,  Richard Jon Jenkins ,  Christopher C. Thompson

    发明人： Vlasta Brusic ,  Richard Jon Jenkins ,  Christopher C. Thompson

    IPC分类号： B24B1/00

    CPC分类号： C09G1/02 ,  B24B13/015 ,  B24B29/02 ,  B24B37/044 ,  B24B37/24 ,  C09K3/1454 ,  H01L31/054

    摘要： The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.

    摘要翻译： 本发明涉及一种抛光包含铝的基材的表面的方法，包括使基材的表面与抛光垫接触，以及抛光组合物，其包含研磨剂，氧化铝的试剂和液体载体，并在 至少一部分表面以从衬底去除至少一些铝并抛光衬底的表面，其中磨料是颗粒形式并悬浮在液体载体中。

    CMP of copper/ruthenium substrates
    12.
    发明授权
    CMP of copper/ruthenium substrates 有权
    铜/钌基板的CMP

    公开(公告)号：US07265055B2

    公开(公告)日：2007-09-04

    申请号：US11259645

    申请日：2005-10-26

    申请人： Christopher C. Thompson ,  Vlasta Brusic ,  Renjie Zhou

    发明人： Christopher C. Thompson ,  Vlasta Brusic ,  Renjie Zhou

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04

    摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

    摘要翻译： 本发明提供了一种化学机械抛光衬底的方法。 包含钌和铜的基材与包括抛光组分，过氧化氢，有机酸，至少一种包含至少一个氮原子的杂环化合物和水的化学机械抛光系统接触。 抛光组分相对于基底移动，并且研磨衬底的至少一部分以抛光衬底。 抛光系统的pH为约6至约12，钌和铜电接触，并且抛光系统中铜的开路电位与钌的开路电位之间的差为约50mV或更小。

    Compositions for polishing aluminum/copper and titanium in damascene structures
    14.
    发明授权
    Compositions for polishing aluminum/copper and titanium in damascene structures 有权
    用于在镶嵌结构中抛光铝/铜和钛的组合物

    公开(公告)号：US08425797B2

    公开(公告)日：2013-04-23

    申请号：US12052970

    申请日：2008-03-21

    申请人： Vlasta Brusic ,  Christopher Thompson ,  Jeffrey Dysard

    发明人： Vlasta Brusic ,  Christopher Thompson ,  Jeffrey Dysard

    IPC分类号： C09K13/04

    CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24D3/00 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F3/03 ,  C23F3/06

    摘要： The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an α-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.

    摘要翻译： 本发明提供了用于平坦化或抛光基材的组合物和方法。 该组合物包含由任选用聚合物氧化的氧化铝颗粒，α-羟基羧酸，氧化至少一种金属的氧化剂，任选的含钙化合物，任选的含钙化合物，任选的杀生物剂，任选地， pH调节剂和水。 该方法使用组合物对基材进行化学机械抛光。

    METAL-PASSIVATING CMP COMPOSITIONS AND METHODS
    15.
    发明申请
    METAL-PASSIVATING CMP COMPOSITIONS AND METHODS 有权
    金属钝化CMP组合物和方法

    公开(公告)号：US20110100956A1

    公开(公告)日：2011-05-05

    申请号：US13004113

    申请日：2011-01-11

    申请人： Jason KELEHER ,  Pankaj Singh ,  Vlasta Brusic

    发明人： Jason KELEHER ,  Pankaj Singh ,  Vlasta Brusic

    IPC分类号： C23F1/00 ,  C09K13/00 ,  C23F1/18 ,  C23F1/30

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  H01L21/3212

    摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.

    摘要翻译： 本发明提供用于抛光含铜和/或含银基材的化学机械抛光（CMP）组合物和方法。 本发明的组合物在水性载体中包含颗粒磨料，初始成膜金属络合剂和二次成膜金属钝化剂。 还公开了用本发明的组合物研磨衬底的方法。

    Method for passivating chromium
    17.
    发明授权
    Method for passivating chromium 失效
    钝化铬的方法

    公开(公告)号：US3939293A

    公开(公告)日：1976-02-17

    申请号：US465657

    申请日：1974-04-30

    申请人： Vlasta Brusic ,  Robert O. Lussow

    发明人： Vlasta Brusic ,  Robert O. Lussow

    IPC分类号： C23C8/12 ,  H01J9/26 ,  C23F7/02

    CPC分类号： C23C8/12 ,  H01J9/261

    摘要： Chromium is passivated by forming a chromium oxide layer thereon by heating at temperatures of about 450.degree.C in an atmosphere containing oxygen. While useful, per se, the process finds particular application as an integral part of overall processing schemes where thermal cycles are used.

    摘要翻译： 通过在约450℃的温度下在含有氧的气氛中加热，在其上形成氧化铬层来钝化铬。 尽管本身也是有用的，但是该过程将特定应用作为使用热循环的整体处理方案的组成部分。

    CMP of copper/ruthenium substrates
    19.
    发明申请
    CMP of copper/ruthenium substrates 有权

    公开(公告)号：US20070090094A1

    公开(公告)日：2007-04-26

    申请号：US11259645

    申请日：2005-10-26

    申请人： Christopher Thompson ,  Vlasta Brusic ,  Renjie Zhou

    发明人： Christopher Thompson ,  Vlasta Brusic ,  Renjie Zhou

    IPC分类号： C03C15/00 ,  C23F1/00 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04

    摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.