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11.发明申请Fin Field-Effect Transistor and Method for Fabricating a Fin Field-Effect Transistor 审中-公开翅片场效应晶体管和制造鳍场效应晶体管的方法公开(公告)号：US20080035997A1
公开(公告)日：2008-02-14
申请号：US11833080
申请日：2007-08-02
申请人： Franz Hofmann , Johannes Kretz , Wolfgang Roesner , Thomas Schulz
发明人： Franz Hofmann , Johannes Kretz , Wolfgang Roesner , Thomas Schulz
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L29/66795
摘要： A fin field-effect transistor has a substrate and a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. The source and drain regions are formed once a gate has been produced.
摘要翻译： 翅片场效应晶体管具有在衬底上方的衬底和鳍结构，以及在衬底上方的鳍结构之外的漏极区域和源极区域。 鳍结构用作源极区域和漏极区域之间的沟道。 源极和漏极区域一旦形成栅极就形成。
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12.发明授权公开(公告)号：US07265424B2
公开(公告)日：2007-09-04
申请号：US10768971
申请日：2004-01-30
申请人： Franz Hofmann , Johannes Kretz , Wolfgang Roesner , Thomas Schulz
发明人： Franz Hofmann , Johannes Kretz , Wolfgang Roesner , Thomas Schulz
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L29/66795
摘要： A fin field effect transistor having a substrate, a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. The source and drain regions are formed once the gate has been produced.
摘要翻译： 具有衬底的翅片场效应晶体管，衬底上方的鳍结构，以及衬底上方的鳍状结构之外的漏极区域和源极区域。 鳍结构用作源极区域和漏极区域之间的沟道。 一旦栅极生产就形成源区和漏区。
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公开(公告)号：US06362502B1
公开(公告)日：2002-03-26
申请号：US09692118
申请日：2000-10-19
申请人： Wolfgang Rösner , Thomas Schulz , Lothar Risch , Franz Hofmann
发明人： Wolfgang Rösner , Thomas Schulz , Lothar Risch , Franz Hofmann
IPC分类号： H01L27108
CPC分类号： H01L27/1203 , H01L27/108 , H01L27/10876
摘要： A memory cell contains a memory transistor and a transfer transistor. A gate electrode of the transfer transistor and a control gate electrode of the memory transistor are connected to a word line. The memory transistor has a floating gate electrode that is isolated from a channel region of the memory transistor by a first dielectric layer and is connected to a first source/drain region of the transfer transistor. The control gate electrode is isolated from the floating gate electrode by a second dielectric layer. A first source/drain region of the memory transistor is connected to a bit line. The memory and transfer transistors are preferably of different conductivity types. During the writing of information, the transfer transistor is in the on-state and the memory transistor is in the off-state. During the reading-out of information, the transfer transistor is in the off-state and the memory transistor is in the on-state.
摘要翻译： 存储单元包含存储晶体管和转移晶体管。 转移晶体管的栅电极和存储晶体管的控制栅电极连接到字线。 存储晶体管具有通过第一介电层与存储晶体管的沟道区隔离并与转移晶体管的第一源极/漏极区连接的浮栅电极。 控制栅电极通过第二电介质层与浮置栅电极隔离。 存储晶体管的第一源/漏区连接到位线。 存储器和转移晶体管优选地具有不同的导电类型。 在写入信息期间，传输晶体管处于导通状态，并且存储晶体管处于截止状态。 在读出信息期间，传输晶体管处于截止状态，并且存储晶体管处于导通状态。
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公开(公告)号：US20150114848A1
公开(公告)日：2015-04-30
申请号：US14388141
申请日：2013-02-14
申请人： Frank Engelke , Claudius Bevot , Thomas Schulz , Rolf Reischl , Rolf Kraemer , Andreas Gess
发明人： Frank Engelke , Claudius Bevot , Thomas Schulz , Rolf Reischl , Rolf Kraemer , Andreas Gess
IPC分类号： G01N27/403 , G01M15/10
CPC分类号： G01N27/403 , G01M15/102 , G01N27/4067
摘要： In a method for operating a heatable exhaust-gas sensor, which supplies at least one measuring signal and in which a sensor heater is operated using a pulse-width modulated operating voltage, the detection of the at least one measuring signal has priority over the supply of the pulse-width modulated operating voltage for sensor heater, and at least during a predefined time window in which the measuring signal is detected, the supply of the pulse-width modulated operating voltage for the sensor heater is suppressed using a blocking signal.
摘要翻译： 在用于操作提供至少一个测量信号并且其中传感器加热器使用脉冲宽度调制工作电压来操作的可加热排气传感器的方法中，所述至少一个测量信号的检测优先于供给 的传感器加热器的脉冲宽度调制工作电压，并且至少在检测到测量信号的预定时间窗口期间，使用阻塞信号抑制传感器加热器的脉冲宽度调制工作电压的供给。
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公开(公告)号：US08248619B2
公开(公告)日：2012-08-21
申请号：US12654048
申请日：2009-12-08
申请人： Ingolf Hörsch , Stefan Jaegle , Rolf Meier , Gerhard Merettig , Philipp Fortenbacher , Felix Lang , Thomas Schulz
发明人： Ingolf Hörsch , Stefan Jaegle , Rolf Meier , Gerhard Merettig , Philipp Fortenbacher , Felix Lang , Thomas Schulz
IPC分类号： G01B11/14
CPC分类号： G01V8/14
摘要： A light barrier detects an object which interrupts a beam of light of the light barrier. A light transmitter transmits a light beam in the direction of a reflector and a light receiver receives a reflected portion of the light beam. The improved light barrier has a reflector which is made as a cylindrical reflector column having a plurality of retroreflecting elements aligned toward the outer surface. The diameter of the reflector column is considerably smaller than the extent of the light beam perpendicular to the cylinder axis so that an optically effective detection beam of light is formed between the sensor and the reflector column whose cross-section at the sensor is determined by the light transmitter and, in direct proximity to the reflector column. The cross-section is determined by the areal overlap of the light beam with the reflector column.
摘要翻译： 光屏障检测中断光栅的光束的物体。 光发射器沿反射器的方向透射光束，并且光接收器接收光束的反射部分。 改进的光栅具有反射器，其被制成具有朝向外表面排列的多个回射元件的圆柱形反射器柱。 反射器柱的直径比垂直于气缸轴线的光束的范围小得多，从而在传感器和反射器柱之间形成光学有效的检测光束，其中传感器的横截面由 光发射器，并且与反射器柱直接接近。 横截面由光束与反射器柱的面重叠确定。
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公开(公告)号：US08124475B2
公开(公告)日：2012-02-28
申请号：US12414120
申请日：2009-03-30
IPC分类号： H01L21/8242
CPC分类号： H01L29/785 , H01L21/845 , H01L27/0629 , H01L27/108 , H01L27/10805 , H01L27/10823 , H01L27/10826 , H01L27/1085 , H01L27/10873 , H01L27/10876 , H01L27/10879 , H01L27/1211 , H01L27/13 , H01L28/60 , H01L29/66795
摘要： An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs.
摘要翻译： 集成电路装置包括作为平面绝缘层的一部分的绝缘区域和包含：靠近和远离绝缘区域的近远电极区域和电介质区域的电容器。 电容器和有源部件位于绝缘层的同一侧，并且组件的近电极区域和有源区域是平面的并且平行于绝缘层。 近电极区域是单晶体并且包含多个网状物。
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公开(公告)号：US20110215479A1
公开(公告)日：2011-09-08
申请号：US13096802
申请日：2011-04-28
申请人： Thomas Schulz , Sergei Postnikov
发明人： Thomas Schulz , Sergei Postnikov
IPC分类号： H01L23/48
CPC分类号： H01L23/52 , H01L21/027 , H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.
摘要翻译： 公开了图形特征的方法，制造半导体器件的方法和半导体器件。 在一个实施例中，图案化特征的方法包括在第一材料层中形成特征的第一部分。 特征的第二部分形成在第一材料层中，并且特征的第三部分形成在第二材料层中。
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公开(公告)号：US20100141964A1
公开(公告)日：2010-06-10
申请号：US12654048
申请日：2009-12-08
申请人： Ingolf Hörsch , Stefan Jaegle , Rolf Meier , Gerhard Merettig , Philipp Fortenbacher , Felix Lang , Thomas Schulz
发明人： Ingolf Hörsch , Stefan Jaegle , Rolf Meier , Gerhard Merettig , Philipp Fortenbacher , Felix Lang , Thomas Schulz
CPC分类号： G01V8/14
摘要： The invention relates to a light barrier for the detection of an object (2) which interrupts a beam of light (5) of the light barrier, having a sensor (4) with at least one light transmitter (4-1) for the transmission of a light beam (5) in the direction of a reflector (10); at least one light receiver (4-2) for the reception of a reflected portion of the light beam; and an evaluation unit (4-3) for the evaluation of the reflected light beam detected by the light receiver (4-2), To provide an improved light barrier which delivers an exact position determination of the object in the conveying device with a small installation and adjustment effort, it is proposed that the reflector (10) is made as a cylindrical reflector column (10) which has a plurality of retroreflecting elements (17) aligned toward the outer surface, with the diameter of the reflector column (10) being considerably smaller than the extent of the light beam (5) perpendicular to the cylinder axis so that an optically effective detection beam of light (20) is formed between the sensor (4) and the reflector column (10) whose cross-section at the sensor (4) is determined by the light transmitter (4-1) and, in direct proximity to the reflector column (10), by the areal overlap of the light beam (5) with the reflector column (10).
摘要翻译： 本发明涉及一种用于检测中断光束的光束（5）的物体（2）的光栅，其具有传感器（4），该传感器具有用于传输的至少一个光发送器（4-1） 在反射器（10）的方向上的光束（5）; 至少一个光接收器（4-2），用于接收光束的反射部分; 以及用于评估由光接收器（4-2）检测的反射光束的评估单元（4-3）。为了提供改进的光屏障，其以小的方式传送输送装置中的物体的精确位置确定 提出了将反射器（10）制成圆柱形的反射器柱（10），其具有多个与外表面对准的回射元件（17），反射器柱（10）的直径， 远小于垂直于气缸轴线的光束（5）的程度，使得在传感器（4）和反射器柱（10）之间形成光学有效的检测光束（20），其中横截面为 传感器（4）由光发射器（4-1）确定，并且直接靠近反射器柱（10），由光束（5）与反射器柱（10）的面重叠确定。
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19.发明授权Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor 有权具有漏极扩展MOS场效应晶体管的鳍结构的多栅极场效应晶体管的制造方法公开(公告)号：US07638370B2
公开(公告)日：2009-12-29
申请号：US11800984
申请日：2007-05-08
IPC分类号： H01L29/78 , H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
摘要翻译： 在电子部件的制造方法中，在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域， 在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域，其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中 。
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公开(公告)号：US20090184355A1
公开(公告)日：2009-07-23
申请号：US12414120
申请日：2009-03-30
CPC分类号： H01L29/785 , H01L21/845 , H01L27/0629 , H01L27/108 , H01L27/10805 , H01L27/10823 , H01L27/10826 , H01L27/1085 , H01L27/10873 , H01L27/10876 , H01L27/10879 , H01L27/1211 , H01L27/13 , H01L28/60 , H01L29/66795
摘要： An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs.
摘要翻译： 集成电路装置包括作为平面绝缘层的一部分的绝缘区域和包含：靠近和远离绝缘区域的近远电极区域和电介质区域的电容器。 电容器和有源部件位于绝缘层的同一侧，并且组件的近电极区域和有源区域是平面的并且平行于绝缘层。 近电极区域是单晶体并且包含多个网状物。
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