摘要:
A magnetic recording medium is disclosed, comprising a nonmagnetic support having thereon a magnetic layer, wherein at least one of ester compounds represented by formula (I) is present in or on the magnetic layer, ##STR1## wherein R.sub.1 represents a straight chain, saturated alkyl group having 6 to 12 carbon atoms, R.sub.2 represents a straight chain, saturated alkyl group having 4 to 10 carbon atoms, and R represents a branched or straight chain alkyl group having 4 to 22 carbon atoms.
摘要:
A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 μm or greater and 5 μm or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.
摘要:
In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.
摘要:
A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer.
摘要:
In forming a vertical magnetization type recording medium, a first soft magnetic film layer is formed on each side of a film-shaped support by vacuum deposition or sputtering at a temperature of 30.degree. C. or lower, a second soft magnetic film layer is formed on each of the first soft magnetic film layers, and a vertical magnetization film layer essentially containing Co-Cr is formed on each of the second soft magnetic film layers. The thickness of the first soft magnetic film layer on one side of the support may be made different from that of the first soft magnetic film layer on the other side so that curling of the recording medium is substantially eliminated.
摘要:
In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.
摘要:
A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2 of the second sublayer and the total thickness d1 of the first and second sublayers satisfy a relationship, 0.1≦d2/d1≦0.9.
摘要:
In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.
摘要:
In a semiconductor laser device including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having a pair of opposite light-exit end facets; and a reflectance control layer being formed on at least one of the pair of light-exit end facets, and having at least two sublayers. In the semiconductor laser device, a region near a boundary between the multilayered structure and one of the at least two sublayers closest to the semiconductor layers of the reflectance control layer has an oxygen concentration of 15 atomic percent (atm %) or below.
摘要:
A method for preparing a magnetic recording medium which comprises the steps:(a) providing on a non-magnetic support, a thin magnetic metal film,(b) providing on the thin magnetic film, a protective layer comprised substantially of carbon,(c) washing the surface of the protective layer at least once, each washing performed with one substance selected from the group consisting of an alkali detergent, a neutral detergent and an organic solvent, and(d) providing on the surface of the protective layer, a lubricating layer containing at least one organic lubricating agent.Where the magnetic recording mediums produced therefrom exhibit excellent lubricating properties and running durability and causes no attachments on a magnetic head. Magnetic disks produced from the magnetic recording mediums also exhibit excellent lubricating properties and running durability and also do not cause attachments on a magnetic head.