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    Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
    2.
    发明申请
    Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 审中-公开
    在谐振器端面附近具有电流非注入区域的半导体激光器件及其制造方法

    公开(公告)号：US20050164420A1

    公开(公告)日：2005-07-28

    申请号：US11076918

    申请日：2005-03-11

    申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

    发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

    IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01L21/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

    摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

    摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成SiO 2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极 设备周长。

    Laser module
    5.
    发明授权
    Laser module 有权
    激光模块

    公开(公告)号：US07369586B2

    公开(公告)日：2008-05-06

    申请号：US10954245

    申请日：2004-10-01

    申请人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano

    发明人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano

    IPC分类号： H01S3/13

    CPC分类号： G02B6/4206 ,  G02B6/4239 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/005 ,  H01S5/0222 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/4012 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

    摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.

    摘要翻译： 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。 在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位 在容器中 此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

    Laser module
    7.
    发明申请
    Laser module 有权
    激光模块

    公开(公告)号：US20050074039A1

    公开(公告)日：2005-04-07

    申请号：US10954245

    申请日：2004-10-01

    申请人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano

    发明人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano

    IPC分类号： G02B6/42 ,  C09J11/04 ,  C09J11/06 ,  C09J163/00 ,  C09J171/02 ,  C09J201/00 ,  H01S3/10 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01S5/40

    CPC分类号： G02B6/4206 ,  G02B6/4239 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/005 ,  H01S5/0222 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/4012 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

    摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.

    摘要翻译： 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。 在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位 在容器中 此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

    Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet
    8.
    发明授权
    Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet 有权
    具有在半导体层之间的边界处的受控氧浓度和形成在端面上的反射控制层的半导体激光器件

    公开(公告)号：US06529537B2

    公开(公告)日：2003-03-04

    申请号：US09782057

    申请日：2001-02-14

    申请人： Fusao Yamanaka

    发明人： Fusao Yamanaka

    IPC分类号： H01S500

    CPC分类号： H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： In a semiconductor laser device including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having a pair of opposite light-exit end facets; and a reflectance control layer being formed on at least one of the pair of light-exit end facets, and having at least two sublayers. In the semiconductor laser device, a region near a boundary between the multilayered structure and one of the at least two sublayers closest to the semiconductor layers of the reflectance control layer has an oxygen concentration of 15 atomic percent (atm %) or below.

    摘要翻译： 在包括由多个III-V族化合物制成的多个半导体层形成并具有一对相对的光出射端面的多层结构的半导体激光器件中， 以及反射控制层，其形成在所述一对光出射端面中的至少一个上，并且具有至少两个子层。 在半导体激光器件中，多层结构与最靠近反射控制层的半导体层的至少两个子层之一的边界附近的区域的氧浓度为15原子％（atm％）以下。

    Method for preparing a magnetic recording medium and a magnetic disk using the same
    9.
    发明授权
    Method for preparing a magnetic recording medium and a magnetic disk using the same 失效
    制备磁记录介质的方法和使用其的磁盘

    公开(公告)号：US5061562A

    公开(公告)日：1991-10-29

    申请号：US246829

    申请日：1988-09-20

    申请人： Fusao Yamanaka ,  Makoto Nagao ,  Yasuyuki Yamada ,  Kazuhiko Morita

    发明人： Fusao Yamanaka ,  Makoto Nagao ,  Yasuyuki Yamada ,  Kazuhiko Morita

    IPC分类号： G11B5/725 ,  G11B5/84

    CPC分类号： G11B5/84 ,  G11B5/725 ,  Y10S428/90 ,  Y10T428/30

    摘要： A method for preparing a magnetic recording medium which comprises the steps:(a) providing on a non-magnetic support, a thin magnetic metal film,(b) providing on the thin magnetic film, a protective layer comprised substantially of carbon,(c) washing the surface of the protective layer at least once, each washing performed with one substance selected from the group consisting of an alkali detergent, a neutral detergent and an organic solvent, and(d) providing on the surface of the protective layer, a lubricating layer containing at least one organic lubricating agent.Where the magnetic recording mediums produced therefrom exhibit excellent lubricating properties and running durability and causes no attachments on a magnetic head. Magnetic disks produced from the magnetic recording mediums also exhibit excellent lubricating properties and running durability and also do not cause attachments on a magnetic head.

    摘要翻译： 一种制备磁记录介质的方法，包括以下步骤：（a）在非磁性载体上提供薄磁性金属膜，（b）在薄磁膜上提供基本上由碳组成的保护层，（c ）至少一次洗涤保护层的表面，每次用一种选自碱洗涤剂，中性洗涤剂和有机溶剂的物质进行洗涤，和（d）在保护层的表面上提供 含有至少一种有机润滑剂的润滑层。 其中由其制造的磁记录介质表现出优异的润滑性能和运行耐久性，并且不会在磁头上引起附着。 由磁记录介质产生的磁盘也表现出优异的润滑性能和运行耐久性，并且也不会在磁头上引起附着。