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    Multiple patterning with lithographically-defined cuts
    11.
    发明授权
    Multiple patterning with lithographically-defined cuts 有权

    公开(公告)号：US10784119B2

    公开(公告)日：2020-09-22

    申请号：US16154306

    申请日：2018-10-08

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Ravi Prakash Srivastava ,  Hsueh-Chung Chen ,  Steven McDermott ,  Martin O'Toole ,  Brendan O'Brien ,  Terry A. Spooner

    IPC: H01L21/308 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

    Abstract: Methods of self-aligned multiple patterning. First and second mandrels are formed over a hardmask, and a conformal spacer layer is deposited over the first mandrel, the second mandrel, and the hardmask between the first mandrel and the second mandrel. A planarizing layer is patterned to form first and second trenches that expose first and second lengthwise portions of the conformal spacer layer respectively between the first and second mandrels. After patterning the planarizing layer, the first and second lengthwise portions of the conformal spacer layer are removed with an etching process to expose respective portions of the hardmask along a non-mandrel line. A third lengthwise portion of the conformal spacer layer is masked during the etching process by a portion of the planarizing layer and defines a non-mandrel etch mask.

    METHODS OF FORMING CONDUCTIVE LINES AND VIAS AND THE RESULTING STRUCTURES
    15.
    发明申请
    METHODS OF FORMING CONDUCTIVE LINES AND VIAS AND THE RESULTING STRUCTURES 审中-公开

    公开(公告)号：US20190139823A1

    公开(公告)日：2019-05-09

    申请号：US15804006

    申请日：2017-11-06

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hsueh-Chung Chen ,  Jason E. Stephens ,  Lars W. Liebmann ,  Guillaume Bouche

    IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/3213

    Abstract: One illustrative method disclosed herein may include forming first and second via openings and forming conductive material for first and second conductive vias across substantially an entirety of an upper surface of a layer of insulating material and in the via openings. A patterned line etch mask layer is then formed above the conductive material, the etch mask having a first feature corresponding to a first conductive line and a second feature corresponding to a second conductive line, and performing at least one etching process to define the first and second conductive lines that are arranged in a tip-to-tip configuration. In this example, a first edge of the first conductive via is substantially aligned with a first end of the first conductive line and a second edge of the second conductive via is substantially aligned with a second end of the second conductive line.

    Double self-aligned via patterning
    16.
    发明授权
    Double self-aligned via patterning 有权
    双重自对准通过图案化

    公开(公告)号：US09257334B2

    公开(公告)日：2016-02-09

    申请号：US14837865

    申请日：2015-08-27

    Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

    Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

    IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

    Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

    Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

    Multiple patterning with late lithographically-defined mandrel cuts
    17.
    发明授权
    Multiple patterning with late lithographically-defined mandrel cuts 有权

    公开(公告)号：US10651046B2

    公开(公告)日：2020-05-12

    申请号：US16154237

    申请日：2018-10-08

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hsueh-Chung Chen ,  Brendan O'Brien ,  Martin O'Toole ,  Keith Donegan

    IPC: H01L21/311 ,  H01L21/768 ,  H01L21/033

    Abstract: Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.

    DOUBLE SELF ALIGNED VIA PATTERNING
    19.
    发明申请
    DOUBLE SELF ALIGNED VIA PATTERNING 有权
    双向自对准通过方式

    公开(公告)号：US20150371896A1

    公开(公告)日：2015-12-24

    申请号：US14837827

    申请日：2015-08-27

    Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

    Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

    IPC: H01L21/768

    CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

    Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

    Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

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