公开(公告)号：US09419137B1

公开(公告)日：2016-08-16

申请号：US14641809

申请日：2015-03-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Abner Bello ,  Xiuyu Cai ,  Hugh Porter ,  Daniel Pham

IPC: H01L29/78 ,  H01L21/8234 ,  H01L21/324 ,  H01L21/3105 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/7847 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924

Abstract: A method of straining fins of a FinFET device by using a stress memorization film and the resulting device are provided. Embodiments include providing a plurality of bulk Si fins, the plurality of bulk Si fins having a recessed oxide layer therebetween; forming a stress memorization layer over the plurality of bulk Si fins and the recessed oxide layer; annealing the stress memorization layer, the plurality of bulk Si fins, and the recessed oxide layer; and removing the stress memorization layer.

Abstract translation: 提供了通过使用应力记忆膜来制造FinFET器件的鳍片的方法以及所得到的器件。 实施例包括提供多个体积Si散热片，所述多个本体Si散热片在其间具有凹陷的氧化物层; 在所述多个体积Si散热片和所述凹陷氧化物层上形成应力记忆层; 退火应力记忆层，多个体积Si散热片和凹陷氧化物层; 并去除应力记忆层。

公开(公告)号：US09281249B2

公开(公告)日：2016-03-08

申请号：US14155504

申请日：2014-01-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alok Vaid ,  Abner Bello ,  Sipeng Gu ,  Lokesh Subramany ,  Xiang Hu ,  Akshey Sehgal

IPC: H01L21/66 ,  G01B11/02 ,  G01B11/06 ,  G03F7/20 ,  G01N21/21

CPC classification number: H01L22/12 ,  G01B11/02 ,  G01B11/0633 ,  G01B11/065 ,  G01B2210/56 ,  G01N21/211 ,  G03F7/70616 ,  G03F7/70625

Abstract: Measurement of thickness of layers of a circuit structure is obtained, where the thickness of the layers is measured using an optical critical dimension (OCD) measurement technique, and the layers includes a high-k layer and an interfacial layer. Measurement of thickness of the high-k layer is separately obtained, where the thickness of the high-k layer is measured using a separate measurement technique from the OCD measurement technique. The separate measurement technique provides greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer of the layers. Characteristics of the circuit structure, such as a thickness of the interfacial layer, are ascertained using, in part, the separately obtained thickness measurement of the high-k layer.

Abstract translation: 获得电路结构层的厚度的测量，其中使用光学临界尺寸（OCD）测量技术测量层的厚度，并且层包括高k层和界面层。 分别获得高k层的厚度的测量，其中使用来自OCD测量技术的单独的测量技术来测量高k层的厚度。 与OCD测量技术相比，单独的测量技术提供了来自层的界面层厚度的信号的高k层厚度的信号的更大的去耦。 电路结构的特性，如界面层的厚度，部分使用单独获得的高k层的厚度测量来确定。

公开(公告)号：US20150371912A1

公开(公告)日：2015-12-24

申请号：US14311761

申请日：2014-06-23

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Abner Bello ,  Michael Wedlake

IPC: H01L21/66 ,  H01L21/67 ,  B24B37/04 ,  H01L21/306 ,  B24B37/005 ,  B24B37/27

CPC classification number: B24B37/04 ,  B24B37/005 ,  B24B37/27

Abstract: Methods, non-transitory computer readable media, and systems are provided for detecting an endpoint of a chemical mechanical planarization (CMP) process on a semiconductor substrate. The method comprises generating a reference signal, generating a first signal with which to control a CMP system, generating a second signal using a combination of the first signal and the reference signal, commanding the CMP system with the second signal, generating a response signal that indicates an operational characteristic of the CMP system that is responsive to the second signal and a friction property of the semiconductor substrate, and filtering the response signal using the reference signal to determine the endpoint of the CMP process.

Abstract translation: 提供了用于检测半导体衬底上的化学机械平面化（CMP）工艺的端点的方法，非暂时计算机可读介质和系统。 该方法包括生成参考信号，产生用于控制CMP系统的第一信号，使用第一信号和参考信号的组合产生第二信号，向CMP系统指示第二信号，产生响应信号，该响应信号 表示响应于第二信号和半导体衬底的摩擦特性的CMP系统的操作特性，并且使用参考信号对响应信号进行滤波以确定CMP过程的终点。