公开(公告)号：US20170025398A1

公开(公告)日：2017-01-26

申请号：US14803466

申请日：2015-07-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sven Beyer ,  Jan Hoentschel ,  Alexander Ebermann

IPC: H01L25/16 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L25/167 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L24/83 ,  H01L25/043 ,  H01L2224/16146 ,  H01L2224/818 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/12044

Abstract: A semiconductor die is provided with an optical transmitter configured to transmit an optical signal to another die and an optical receiver configured to receive an optical signal from another die. Furthermore, a method of forming a semiconductor device is provided including forming a first semiconductor die with the steps of providing a semiconductor substrate, forming a transistor device at least partially over the semiconductor substrate, forming an optical receiver one of at least partially over and at least partially in the semiconductor substrate, forming a metallization layer over the transistor device, and forming an optical transmitter one of at least partially over the metallization layer and at least partially in the metallization layer.

Abstract translation: 半导体管芯设置有被配置为将光信号传输到另一管芯的光发射器和被配置为从另一管芯接收光信号的光接收器。 此外，提供一种形成半导体器件的方法，包括以下步骤形成第一半导体管芯：提供半导体衬底，至少部分地在半导体衬底上形成晶体管器件，形成光接收器，至少部分地覆盖 至少部分地在所述半导体衬底中，在所述晶体管器件上形成金属化层，以及至少部分地在所述金属化层上并且至少部分地在所述金属化层中形成光发射器。

公开(公告)号：US09123825B2

公开(公告)日：2015-09-01

申请号：US14153521

申请日：2014-01-13

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Sven Beyer ,  Alexander Ebermann ,  Carsten Grass ,  Jan Hoentschel

IPC: H01L21/8234 ,  H01L21/027 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/311

CPC classification number: H01L21/823431 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/0275 ,  H01L21/28123 ,  H01L21/28176 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/823437 ,  H01L21/845

Abstract: A method for fabricating an integrated circuit includes providing a semiconductor substrate with a pad layer overlying the semiconductor substrate and a photoresist layer overlying the pad layer, exposing the photoresist layer to a split laser beam to form a plurality of parallel linear void regions in the photoresist layer, and etching the pad layer and the semiconductor substrate beneath the plurality of parallel linear void regions to form a plurality of extended parallel linear void regions. The method further includes depositing a first dielectric material over the semiconductor substrate, patterning a photoresist material over the semiconductor substrate to cover a portion of the semiconductor substrate, and etching portions of the pad layer, the first dielectric material, and the semiconductor substrate. Still further, the method includes depositing a second dielectric material into the second void regions.

Abstract translation: 一种用于制造集成电路的方法包括：提供具有覆盖在半导体衬底上的衬垫层的半导体衬底和覆盖衬垫层的光致抗蚀剂层，将光致抗蚀剂层暴露于分裂激光束以在光刻胶中形成多个平行的线性空隙区域 并且在所述多个平行线性空隙区域下方蚀刻所述衬垫层和所述半导体衬底，以形成多个延伸的平行线性空隙区域。 该方法还包括在半导体衬底上沉积第一介电材料，在半导体衬底上图案化光致抗蚀剂材料以覆盖半导体衬底的一部分，以及蚀刻衬垫层，第一电介质材料和半导体衬底的部分。 此外，该方法包括将第二电介质材料沉积到第二空隙区域中。