公开(公告)号：US20140377965A1

公开(公告)日：2014-12-25

申请号：US13921520

申请日：2013-06-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gerard M. Schmid ,  Ji Xu ,  Richard A. Farrell

IPC: H01L21/02

CPC classification number: G03F7/0002 ,  H01L21/0271

Abstract: An illustrative DSA formulation disclosed herein includes a block copolymer material, a casting solvent and at least one plasticizer agent. An illustrative method disclosed herein includes depositing a liquid DSA formulation on a guide layer, performing a spin-coating process to form a DSA-based material layer comprised of the liquid DSA formulation above the guide layer, wherein the DSA-based material layer includes at least one plasticizing agent and, after performing the spin-coating process, performing at least one heating process on the DSA-based material layer while at least some of the plasticizing agent remains in the DSA-based material layer so as to enable phase separation of block copolymer materials.

Abstract translation: 本文公开的说明性DSA制剂包括嵌段共聚物材料，浇铸溶剂和至少一种增塑剂。 本文公开的说明性方法包括在引导层上沉积液体DSA制剂，进行旋涂工艺以形成由引导层上方的液体DSA制剂构成的基于DSA的材料层，其中基于DSA的材料层包括在 至少一种增塑剂，并且在进行旋涂工艺之后，在基于DSA的材料层上进行至少一个加热过程，而至少一些增塑剂保留在基于DSA的材料层中，以使得能够相位分离 嵌段共聚物材料。

公开(公告)号：US08889343B2

公开(公告)日：2014-11-18

申请号：US13726732

申请日：2012-12-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Moshe E Preil ,  Gerard M. Schmid ,  Richard A. Farrell ,  Ji Xu ,  Thomas I. Wallow

IPC: G03F7/26 ,  G03F7/20

CPC classification number: G03F7/0002

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract translation: 提供了利用激光退火优化光刻工艺的方法，如定向自组装（DSA）。 在典型的方法下，衬底（例如，晶片）将经历诸如DSA的光刻工艺（例如，具有一组阶段/阶段，方面等）。 在此过程之前或期间，将在衬底上进行一组激光退火通过/扫描以优化一个或多个阶段。 此外，可以对基板进行额外的加工，例如热板退火等。然而，在进行一系列激光退火过程中，可以改变所使用的技术和/或每个通过的光束特性以进一步优化结果。

公开(公告)号：US20140252660A1

公开(公告)日：2014-09-11

申请号：US13787090

申请日：2013-03-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Richard A. Farrell ,  Gerard M. Schmid ,  Sudharshanan Raghunathan

IPC: H01L21/311 ,  H01L23/00

CPC classification number: H01L23/564 ,  H01L21/3086 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/76807 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for multilayer pattern transfer for chemical guides are provided. In a typical embodiment, a device is formed by forming an etch mask layer (e.g., a nitride layer and an oxide layer) over a substrate (e.g., silicon (Si)). An orientation control layer (e.g., a neutral layer) is then formed over the etch mask layer, and an ARC layer (e.g., SiARC) is formed over the orientation control layer. In other embodiments, an organic planarization layer (OPL) and/or a protection layer may also be formed between the ARC layer and the orientation control layer. Regardless, a tapered etch profile/pattern may then be formed through the ARC and/or other layers.

Abstract translation: 提供了用于化学导轨的多层图案转印的方法。 在典型的实施例中，通过在衬底（例如，硅（Si））上形成蚀刻掩模层（例如，氮化物层和氧化物层）来形成器件。 然后在蚀刻掩模层上形成取向控制层（例如中性层），并且在取向控制层上形成ARC层（例如SiARC）。 在其它实施例中，也可以在ARC层和取向控制层之间形成有机平坦化层（OPL）和/或保护层。 无论如何，可以通过ARC和/或其他层形成锥形蚀刻轮廓/图案。

公开(公告)号：US08956808B2

公开(公告)日：2015-02-17

申请号：US13693627

申请日：2012-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gerard M. Schmid ,  Richad A. Farrell ,  Ji Xu ,  Jason R. Cantone ,  Moshe E. Preil

IPC: G03F7/26 ,  G03F7/20

CPC classification number: G03F7/0002

Abstract: A method includes forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template. A directed self-assembly layer is formed over the exposed portions. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer. Non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer.

Abstract translation: 一种方法包括在处理层之上形成具有多个元素的模板，其中处理层的部分在模板的相邻元素之间露出。 在暴露部分上形成定向的自组装层。 定向自组装层具有交替的可蚀刻部件和耐蚀刻部件。 去除了定向自组装层的可蚀刻部件。 使用模板和定向自组装层的耐蚀刻部件对工艺层进行图案化。 非周期元素在该过程中由模板定义，并且周期元素由定向自组装层的耐蚀刻部件在工艺层中定义。

公开(公告)号：US08906802B2

公开(公告)日：2014-12-09

申请号：US13839284

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jeremy A. Wahl ,  Gerard M. Schmid ,  Richard A. Farrell ,  Chanro Park

IPC: H01L21/00 ,  G03C5/00 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/76816

Abstract: One illustrative method disclosed herein includes the steps of performing a directed self-assembly process to form a DSA masking layer, performing at least one process operation to remove at least one of the features of the DSA masking layer so as to thereby define a patterned DSA masking layer with a DSA masking pattern, performing at least one process operation to form a patterned transfer masking layer having a transfer masking pattern comprised of a plurality of features that define a plurality of openings in the transfer masking layer, wherein the transfer masking pattern is the inverse of the DSA masking pattern, and performing at least one etching process through the patterned transfer masking layer on a layer of material to form a plurality of trench/via features in the layer of material.

Abstract translation: 本文公开的一种说明性方法包括以下步骤：执行定向自组装过程以形成DSA掩模层，执行至少一个处理操作以去除DSA掩模层的至少一个特征，从而限定图案化DSA 具有DSA掩模图案的掩模层，执行至少一个处理操作以形成图案化的传输掩蔽层，其具有由在传送掩蔽层中限定多个开口的多个特征组成的传输掩蔽图案，其中传输掩蔽图案是 DSA掩模图案的反向，并且通过在材料层上的图案化转印掩模层进行至少一个蚀刻工艺以在材料层中形成多个沟槽/通孔特征。

公开(公告)号：US20140273511A1

公开(公告)日：2014-09-18

申请号：US13841694

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Richard A. Farrell ,  Gerard M. Schmid ,  xU Ji

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0276

Abstract: Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern.

Abstract translation: 提供了通过DSA光刻产生化学引导图案以制造集成电路的方法。 在一个示例中，集成电路包括形成覆盖半导体衬底上的抗反射涂层的聚合材料的双功能刷层。 聚合物材料具有中性聚合物嵌段部分和联结在一起的钉扎聚合物嵌段部分。 双功能刷层包括由中性聚合物嵌段部分形成的中性层和由钉扎聚合物嵌段部分形成的钉扎层。 选择性地去除中性层或钉扎层的一部分以限定化学引导图案。 沉积在化学引导图案上的嵌段共聚物层。 嵌段共聚物层被相分离以限定与化学引导图案对应的纳米图案。

公开(公告)号：US20140273469A1

公开(公告)日：2014-09-18

申请号：US13839284

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES INC

Inventor： Jeremy A. Wahl ,  Gerard M. Schmid ,  Richard A. Farrell ,  Chanro Park

IPC: H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/76816

Abstract: One illustrative method disclosed herein includes the steps of performing a directed self-assembly process to form a DSA masking layer, performing at least one process operation to remove at least one of the features of the DSA masking layer so as to thereby define a patterned DSA masking layer with a DSA masking pattern, performing at least one process operation to form a patterned transfer masking layer having a transfer masking pattern comprised of a plurality of features that define a plurality of openings in the transfer masking layer, wherein the transfer masking pattern is the inverse of the DSA masking pattern, and performing at least one etching process through the patterned transfer masking layer on a layer of material to form a plurality of trench/via features in the layer of material.

Abstract translation: 本文公开的一种说明性方法包括以下步骤：执行定向自组装过程以形成DSA掩模层，执行至少一个处理操作以去除DSA掩模层的至少一个特征，从而限定图案化DSA 具有DSA掩模图案的掩模层，执行至少一个处理操作以形成图案化的传输掩蔽层，其具有由在传送掩蔽层中限定多个开口的多个特征组成的传输掩蔽图案，其中传输掩蔽图案是 DSA掩模图案的反向，并且通过在材料层上的图案化转印掩模层进行至少一个蚀刻工艺以在材料层中形成多个沟槽/通孔特征。

公开(公告)号：US20140224764A1

公开(公告)日：2014-08-14

申请号：US13764051

申请日：2013-02-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gerard M. Schmid ,  Richad A. Farrell ,  Ji Xu ,  Jason R. Cantone ,  Moshe E. Preil

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01L21/0337

Abstract: A method includes forming a chemical guide layer above a process layer. A template having a plurality of elements is formed above the process layer. The chemical guide layer is disposed on at least portions of the process layer disposed between adjacent elements of the template. A directed self-assembly layer is formed over the chemical guide layer. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer as an etch mask.

Abstract translation: 一种方法包括在处理层之上形成化学引导层。 具有多个元件的模板形成在处理层的上方。 化学引导层设置在设置在模板的相邻元件之间的处理层的至少一部分上。 导向的自组装层形成在化学引导层上。 定向自组装层具有交替的可蚀刻部件和耐蚀刻部件。 去除了定向自组装层的可蚀刻部件。 使用模板和定向自组装层的耐蚀刻部件作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20140178824A1

公开(公告)日：2014-06-26

申请号：US13726732

申请日：2012-12-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Moshe E Preil ,  Gerard M. Schmid ,  Richard A. Farrell ,  Ji Xu ,  Thomas I. Wallow

IPC: G03F7/20

CPC classification number: G03F7/0002

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract translation: 提供了利用激光退火优化光刻工艺的方法，如定向自组装（DSA）。 在典型的方法下，衬底（例如，晶片）将经历诸如DSA的光刻工艺（例如，具有一组阶段/阶段，方面等）。 在此过程之前或期间，将在衬底上进行一组激光退火通过/扫描以优化一个或多个阶段。 此外，可以对基板进行额外的加工，例如热板退火等。然而，在进行一系列激光退火过程中，可以改变所使用的技术和/或每个通过的光束特性以进一步优化结果。