公开(公告)号：US08889343B2

公开(公告)日：2014-11-18

申请号：US13726732

申请日：2012-12-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Moshe E Preil ,  Gerard M. Schmid ,  Richard A. Farrell ,  Ji Xu ,  Thomas I. Wallow

IPC: G03F7/26 ,  G03F7/20

CPC classification number: G03F7/0002

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract translation: 提供了利用激光退火优化光刻工艺的方法，如定向自组装（DSA）。 在典型的方法下，衬底（例如，晶片）将经历诸如DSA的光刻工艺（例如，具有一组阶段/阶段，方面等）。 在此过程之前或期间，将在衬底上进行一组激光退火通过/扫描以优化一个或多个阶段。 此外，可以对基板进行额外的加工，例如热板退火等。然而，在进行一系列激光退火过程中，可以改变所使用的技术和/或每个通过的光束特性以进一步优化结果。

公开(公告)号：US09508562B2

公开(公告)日：2016-11-29

申请号：US14316988

申请日：2014-06-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ji Xu ,  Richard A. Farrell ,  Gerard M. Schmid ,  Moshe E Preil

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/28 ,  G03F7/00 ,  H01L21/311 ,  C08L53/00 ,  G03F1/00

CPC classification number: H01L21/32139 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

Abstract: In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

Abstract translation: 在一个示例中，一种方法包括在工艺层上形成具有多个元件的模板，并在多个元件的侧壁上形成间隔物。 处理层的一部分暴露在相邻间隔物之间​​。 去除多个元件中的至少一个。 掩模结构由暴露部分上的定向自组装材料形成。 使用至少掩模结构作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20140178824A1

公开(公告)日：2014-06-26

申请号：US13726732

申请日：2012-12-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Moshe E Preil ,  Gerard M. Schmid ,  Richard A. Farrell ,  Ji Xu ,  Thomas I. Wallow

IPC: G03F7/20

CPC classification number: G03F7/0002

Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.

Abstract translation: 提供了利用激光退火优化光刻工艺的方法，如定向自组装（DSA）。 在典型的方法下，衬底（例如，晶片）将经历诸如DSA的光刻工艺（例如，具有一组阶段/阶段，方面等）。 在此过程之前或期间，将在衬底上进行一组激光退火通过/扫描以优化一个或多个阶段。 此外，可以对基板进行额外的加工，例如热板退火等。然而，在进行一系列激光退火过程中，可以改变所使用的技术和/或每个通过的光束特性以进一步优化结果。