公开(公告)号：US09508562B2

公开(公告)日：2016-11-29

申请号：US14316988

申请日：2014-06-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ji Xu ,  Richard A. Farrell ,  Gerard M. Schmid ,  Moshe E Preil

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/28 ,  G03F7/00 ,  H01L21/311 ,  C08L53/00 ,  G03F1/00

CPC classification number: H01L21/32139 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

Abstract: In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

Abstract translation: 在一个示例中，一种方法包括在工艺层上形成具有多个元件的模板，并在多个元件的侧壁上形成间隔物。 处理层的一部分暴露在相邻间隔物之间​​。 去除多个元件中的至少一个。 掩模结构由暴露部分上的定向自组装材料形成。 使用至少掩模结构作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20150380252A1

公开(公告)日：2015-12-31

申请号：US14316988

申请日：2014-06-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ji Xu ,  Richard A. Farrell ,  Gerard M. Schmid ,  Moshe E. Preil

IPC: H01L21/28 ,  H01L21/3213

CPC classification number: H01L21/32139 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

Abstract: In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

Abstract translation: 在一个示例中，一种方法包括在工艺层上形成具有多个元件的模板，并在多个元件的侧壁上形成间隔物。 处理层的一部分暴露在相邻间隔物之间​​。 去除多个元件中的至少一个。 掩模结构由暴露部分上的定向自组装材料形成。 使用至少掩模结构作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20140273475A1

公开(公告)日：2014-09-18

申请号：US13804112

申请日：2013-03-14

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Gerard M. Schmid ,  Richard Farrell

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: Methods for fabricating guide patterns and methods for fabricating integrated circuits using guide patterns are provided. In an embodiment, a method for fabricating a guide pattern includes forming a coating of a material with latent grafting sites and a photosensitive component configured to activate the latent grafting sites upon exposure over a substrate. The method exposes selected latent grafting sites in the coating to convert the selected latent grafting sites to active grafting sites. A grafting agent is bonded to the active grafting sites to form the guide pattern.

Abstract translation: 提供制造引导图案的方法和使用引导图案制造集成电路的方法。 在一个实施例中，制造引导图案的方法包括形成具有潜在接枝位置的材料的涂层和被配置为在暴露于基底上时激活潜在接枝位点的光敏部件。 该方法暴露了涂层中所选择的潜在接枝位点以将所选择的潜在接枝位点转化为活性接枝位点。 将接枝剂结合到活性接枝位点以形成引导图案。

公开(公告)号：US08790522B1

公开(公告)日：2014-07-29

申请号：US13764051

申请日：2013-02-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gerard M. Schmid ,  Richad A. Farrell ,  Ji Xu ,  Jason R. Cantone ,  Moshe E. Preil

IPC: H01B13/00

CPC classification number: B44C1/227 ,  H01L21/0337

Abstract: A method includes forming a chemical guide layer above a process layer. A template having a plurality of elements is formed above the process layer. The chemical guide layer is disposed on at least portions of the process layer disposed between adjacent elements of the template. A directed self-assembly layer is formed over the chemical guide layer. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer as an etch mask.

Abstract translation: 一种方法包括在处理层之上形成化学引导层。 具有多个元件的模板形成在处理层的上方。 化学引导层设置在设置在模板的相邻元件之间的处理层的至少一部分上。 导向的自组装层形成在化学引导层上。 定向自组装层具有交替的可蚀刻部件和耐蚀刻部件。 去除了定向自组装层的可蚀刻部件。 使用模板和定向自组装层的耐蚀刻部件作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20140154630A1

公开(公告)日：2014-06-05

申请号：US13693627

申请日：2012-12-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gerard M. Schmid ,  Richad A. Farrell ,  Ji Xu ,  Jason R. Cantone ,  Moshe E. Preil

IPC: G03F7/20

CPC classification number: G03F7/0002

Abstract: A method includes forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template. A directed self-assembly layer is formed over the exposed portions. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer. Non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer.

Abstract translation: 一种方法包括在处理层之上形成具有多个元素的模板，其中处理层的部分在模板的相邻元素之间露出。 在暴露部分上形成定向的自组装层。 定向自组装层具有交替的可蚀刻部件和耐蚀刻部件。 去除了定向自组装层的可蚀刻部件。 使用模板和定向自组装层的耐蚀刻部件对工艺层进行图案化。 非周期元素在该过程中由模板定义，并且周期元素由定向自组装层的耐蚀刻部件在工艺层中定义。

公开(公告)号：US08969207B2

公开(公告)日：2015-03-03

申请号：US13798690

申请日：2013-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gerard M. Schmid ,  Jeremy A. Wahl ,  Richard A. Farrell ,  Chanro Park

IPC: H01L21/311 ,  H01L23/48 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

Abstract: One illustrative method disclosed herein includes forming a patterned hard mask layer comprised of a plurality of discrete openings above a structure, wherein the patterned hard mask layer is comprised of a plurality of intersecting line-type features, forming a patterned etch mask above the patterned hard mask layer that exposes at least one, but not all, of the plurality of discrete openings, and performing at least one etching process through the patterned etch mask and the at least one exposed opening in the patterned hard mask layer to define an opening in the structure.

Abstract translation: 本文公开的一种说明性方法包括形成由结构上方的多个离散开口组成的图案化的硬掩模层，其中所述图案化的硬掩模层由多个相交的线型特征组成，在图案化硬的上方形成图案化的蚀刻掩模 掩模层，其暴露多个离散开口中的至少一个但不是全部，并且通过图案化的蚀刻掩模和图案化的硬掩模层中的至少一个暴露的开口进行至少一个蚀刻工艺，以在 结构体。

公开(公告)号：US08853101B1

公开(公告)日：2014-10-07

申请号：US13841694

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Richard A. Farrell ,  Gerard M. Schmid ,  xU Ji

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/033

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0276

Abstract: Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern.

Abstract translation: 提供了通过DSA光刻产生化学引导图案以制造集成电路的方法。 在一个示例中，集成电路包括形成覆盖半导体衬底上的抗反射涂层的聚合材料的双功能刷层。 聚合物材料具有中性聚合物嵌段部分和联结在一起的钉扎聚合物嵌段部分。 双功能刷层包括由中性聚合物嵌段部分形成的中性层和由钉扎聚合物嵌段部分形成的钉扎层。 选择性地去除中性层或钉扎层的一部分以限定化学引导图案。 沉积在化学引导图案上的嵌段共聚物层。 嵌段共聚物层被相分离以限定与化学引导图案对应的纳米图案。

公开(公告)号：US20140273473A1

公开(公告)日：2014-09-18

申请号：US13798690

申请日：2013-03-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gerard M. Schmid ,  Jeremy A. Wahl ,  Richard A. Farrell ,  Chanro Park

IPC: H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

Abstract: One illustrative method disclosed herein includes forming a patterned hard mask layer comprised of a plurality of discrete openings above a structure, wherein the patterned hard mask layer is comprised of a plurality of intersecting line-type features, forming a patterned etch mask above the patterned hard mask layer that exposes at least one, but not all, of the plurality of discrete openings, and performing at least one etching process through the patterned etch mask and the at least one exposed opening in the patterned hard mask layer to define an opening in the structure.

Abstract translation: 本文公开的一种说明性方法包括形成由结构上方的多个离散开口组成的图案化的硬掩模层，其中所述图案化的硬掩模层由多个相交的线型特征组成，在图案化硬的上方形成图案化的蚀刻掩模 掩模层，其暴露多个离散开口中的至少一个但不是全部，并且通过图案化的蚀刻掩模和图案化的硬掩模层中的至少一个暴露的开口进行至少一个蚀刻工艺，以在 结构体。

公开(公告)号：US09478506B2

公开(公告)日：2016-10-25

申请号：US13787090

申请日：2013-03-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Richard A. Farrell ,  Gerard M. Schmid ,  Sudharshanan Raghunathan

IPC: H01L21/311 ,  H01L23/00 ,  H01L21/308 ,  H01L21/683 ,  H01L21/768 ,  H01L21/67

CPC classification number: H01L23/564 ,  H01L21/3086 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/76807 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for multilayer pattern transfer for chemical guides are provided. In a typical embodiment, a device is formed by forming an etch mask layer (e.g., a nitride layer and an oxide layer) over a substrate (e.g., silicon (Si)). An orientation control layer (e.g., a neutral layer) is then formed over the etch mask layer, and an ARC layer (e.g., SiARC) is formed over the orientation control layer. In other embodiments, an organic planarization layer (OPL) and/or a protection layer may also be formed between the ARC layer and the orientation control layer. Regardless, a tapered etch profile/pattern may then be formed through the ARC and/or other layers.

Abstract translation: 提供了用于化学导轨的多层图案转印的方法。 在典型的实施例中，通过在衬底（例如，硅（Si））上形成蚀刻掩模层（例如，氮化物层和氧化物层）来形成器件。 然后在蚀刻掩模层上形成取向控制层（例如中性层），并且在取向控制层上形成ARC层（例如SiARC）。 在其它实施例中，也可以在ARC层和取向控制层之间形成有机平坦化层（OPL）和/或保护层。 无论如何，可以通过ARC和/或其他层形成锥形蚀刻轮廓/图案。

公开(公告)号：US09455154B2

公开(公告)日：2016-09-27

申请号：US13804112

申请日：2013-03-14

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Gerard M. Schmid ,  Richard Farrell

IPC: H01L21/308 ,  H01L21/311 ,  G03F7/004 ,  G03F7/20 ,  H01L21/3105 ,  B81C1/00

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: Methods for fabricating guide patterns and methods for fabricating integrated circuits using guide patterns are provided. In an embodiment, a method for fabricating a guide pattern includes forming a coating of a material with latent grafting sites and a photosensitive component configured to activate the latent grafting sites upon exposure over a substrate. The method exposes selected latent grafting sites in the coating to convert the selected latent grafting sites to active grafting sites. A grafting agent is bonded to the active grafting sites to form the guide pattern.

Abstract translation: 提供制造引导图案的方法和使用引导图案制造集成电路的方法。 在一个实施例中，制造引导图案的方法包括形成具有潜在接枝位置的材料的涂层和被配置为在暴露于基底上时激活潜在接枝位点的光敏部件。 该方法暴露了涂层中所选择的潜在接枝位点以将所选择的潜在接枝位点转化为活性接枝位点。 将接枝剂结合到活性接枝位点以形成引导图案。