公开(公告)号：US09105497B2

公开(公告)日：2015-08-11

申请号：US14017485

申请日：2013-09-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhendong Hong ,  Susie Tzeng ,  Amol Joshi ,  Ashish Bodke ,  Divya Pisharoty ,  Usha Raghuram ,  Olov Karlsson ,  Kisik Choi ,  Salil Mujumdar ,  Paul R. Besser ,  Jinping Liu ,  Hoon Kim

IPC: H01L21/28 ,  H01L27/092 ,  H01L29/51 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L27/0922 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823835 ,  H01L27/092 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66545

Abstract: One method for forming replacement gate structures for NMOS and PMOS transistors includes performing an etching process to remove a sacrificial gate structure for the NMOS and PMOS transistors to thereby define NMOS and PMOS gate cavities, depositing a gate insulation layer in the gate cavities, depositing a first metal layer on the gate insulation layer in the gate cavities, performing at least one process operation to form (1) an NMOS metal silicide material above the first metal layer within the NMOS gate cavity, the NMOS metal silicide material having a first amount of atomic silicon, and (2) a PMOS metal silicide material above the first metal layer within the PMOS gate cavity, the PMOS metal silicide material having a second amount of atomic silicon, and wherein the first and second amounts of atomic silicon are different, and forming gate cap layers within the NMOS and PMOS gate cavities.

Abstract translation: 用于形成用于NMOS和PMOS晶体管的替代栅极结构的一种方法包括执行蚀刻工艺以去除用于NMOS和PMOS晶体管的牺牲栅极结构，由此限定NMOS和PMOS栅极腔，在栅极腔中沉积栅极绝缘层， 在栅极腔中的栅极绝缘层上的第一金属层，执行至少一个处理操作以在NMOS栅极腔内的第一金属层上方形成（1）NMOS金属硅化物材料，所述NMOS金属硅化物材料具有第一量 原子硅，和（2）在PMOS栅极腔内的第一金属层上方的PMOS金属硅化物材料，PMOS金属硅化物材料具有第二量的原子硅，并且其中第一和第二量的原子硅是不同的，以及 在NMOS和PMOS门腔内形成栅极盖层。

公开(公告)号：US08946015B2

公开(公告)日：2015-02-03

申请号：US14333715

申请日：2014-07-17

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。