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    LATERAL BIPOLAR TRANSISTOR
    12.
    发明申请
    LATERAL BIPOLAR TRANSISTOR 有权

    公开(公告)号：US20230062747A1

    公开(公告)日：2023-03-02

    申请号：US17529002

    申请日：2021-11-17

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Man Gu ,  Haiting Wang ,  Jagar Singh

    IPC: H01L29/10 ,  H01L29/423 ,  H01L29/735 ,  H01L29/66

    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes a lateral bipolar junction transistor including an extrinsic base region and a bilayer dielectric spacer on sidewalls of the extrinsic base region, and a p-n junction positioned under the bilayer dielectric spacer between the extrinsic base region and at least an emitter region.

    Memory device and methods of making such a memory device
    15.
    发明授权
    Memory device and methods of making such a memory device 有权

    公开(公告)号：US11437568B2

    公开(公告)日：2022-09-06

    申请号：US16836434

    申请日：2020-03-31

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Yanping Shen ,  Haiting Wang ,  Sipeng Gu

    IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

    Abstract: One illustrative memory cell disclosed herein includes at least one layer of insulating material having a first opening and an internal sidewall spacer positioned within the first opening, wherein the internal sidewall spacer includes a spacer opening. The memory cell also includes a bottom electrode positioned within the spacer opening, a memory state material positioned above an upper surface of the bottom electrode and above an upper surface of the internal sidewall spacer, and a top electrode positioned above the memory state material.

    Field effect transistor with asymmetric gate structure and method
    16.
    发明授权
    Field effect transistor with asymmetric gate structure and method 有权

    公开(公告)号：US11342453B2

    公开(公告)日：2022-05-24

    申请号：US16996010

    申请日：2020-08-18

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Yanping Shen ,  Haiting Wang ,  Zhiqing Li

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423

    Abstract: Disclosed is a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a replacement metal gate (RMG) structure that includes a first section, which traverses a semiconductor body at a channel region in a first-type well, and a second section, which is adjacent to the first section and which traverses the semiconductor body at a drain drift region in a second-type well. The RMG structure includes, in both sections, a first-type work function layer and a second-type work function layer on the first-type work function layer. However, the thickness of the first-type work function layer in the first section is greater than the thickness in the second section such that the RMG structure is asymmetric. Thus, threshold voltage (Vt) at the first section is greater than Vt at the second section and the LDMOSFET has a relatively high breakdown voltage (BV). Also disclosed are methods for forming the LDMOSFET.

    SINGLE FIN STRUCTURES
    17.
    发明申请
    SINGLE FIN STRUCTURES 有权

    公开(公告)号：US20210367060A1

    公开(公告)日：2021-11-25

    申请号：US17398479

    申请日：2021-08-10

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Haiting Wang ,  Hong Yu ,  Zhenyu Hu

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/45 ,  H01L21/285 ,  H01L29/417

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.

    Transistors with source/drain regions having sections of epitaxial semiconductor material
    18.
    发明授权
    Transistors with source/drain regions having sections of epitaxial semiconductor material 有权

    公开(公告)号：US11164795B2

    公开(公告)日：2021-11-02

    申请号：US16828273

    申请日：2020-03-24

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

    TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL SEMICONDUCTOR MATERIAL
    20.
    发明申请
    TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL SEMICONDUCTOR MATERIAL 有权

    公开(公告)号：US20210305103A1

    公开(公告)日：2021-09-30

    申请号：US16828273

    申请日：2020-03-24

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10

    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

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