公开(公告)号：US11215756B2

公开(公告)日：2022-01-04

申请号：US16859347

申请日：2020-04-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen Nummy ,  Kevin K. Dezfulian ,  Bo Peng

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.

公开(公告)号：US20210333474A1

公开(公告)日：2021-10-28

申请号：US16859347

申请日：2020-04-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen Nummy ,  Kevin K. Dezfulian ,  Bo Peng

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.

公开(公告)号：US12211886B1

公开(公告)日：2025-01-28

申请号：US18765489

申请日：2024-07-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： Prateek Kumar Sharma ,  Venkata Narayana Rao Vanukuru ,  Kevin K. Dezfulian ,  Kenneth J. Giewont

IPC: H01L21/768 ,  H01L21/764 ,  H01L49/02

Abstract: Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the scaled cavities.

公开(公告)号：US11837851B2

公开(公告)日：2023-12-05

申请号：US17931933

申请日：2022-09-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/223 ,  H01S5/026 ,  H01S5/323 ,  H01S5/02

CPC classification number: H01S5/2018 ,  H01S5/20 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/021 ,  H01S5/026 ,  H01S5/3054 ,  H01S5/32333

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11662523B2

公开(公告)日：2023-05-30

申请号：US17151955

申请日：2021-01-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/30 ,  G02B6/42 ,  F21V8/00 ,  G02B6/12

CPC classification number: G02B6/305 ,  G02B6/0046 ,  G02B6/4298 ,  G02B6/12002 ,  G02B6/12004 ,  G02B2006/12147

Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.

公开(公告)号：US20230011972A1

公开(公告)日：2023-01-12

申请号：US17931933

申请日：2022-09-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/223

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11536903B1

公开(公告)日：2022-12-27

申请号：US17406773

申请日：2021-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Theodore Letavic ,  Yusheng Bian ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/122 ,  G02B6/30 ,  G02B6/36 ,  G02B6/14 ,  G02B6/124 ,  G02B6/12

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.

公开(公告)号：US11515685B2

公开(公告)日：2022-11-29

申请号：US17167201

申请日：2021-02-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/223 ,  H01S5/026 ,  H01S5/323 ,  H01S5/02

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11487059B2

公开(公告)日：2022-11-01

申请号：US17179532

申请日：2021-02-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asli Sahin ,  Karen A. Nummy ,  Thomas Houghton ,  Kevin K. Dezfulian ,  Kenneth J. Giewont ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

公开(公告)号：US11320589B1

公开(公告)日：2022-05-03

申请号：US17084186

申请日：2020-10-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Siva P. Adusumilli ,  Bo Peng ,  Kenneth J. Giewont

IPC: G02B6/124 ,  G02B6/12 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers integrated with one or more airgap and methods of manufacture. The structure includes: a substrate material comprising one or more airgaps; and a grating coupler disposed over the substrate material and the one or more airgaps.