Method and device for rotating a wafer
    12.
    发明授权
    Method and device for rotating a wafer 有权
    用于旋转晶片的方法和装置

    公开(公告)号:US07351293B2

    公开(公告)日:2008-04-01

    申请号:US10969256

    申请日:2004-10-19

    IPC分类号: H01L21/00 C23C16/00 C23C14/00

    CPC分类号: H01L21/67784

    摘要: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

    摘要翻译: 用于旋转布置在反应器中的晶片的方法和装置。 将晶片在这种性质的反应器中处理,并且对于该处理应尽可能均匀地进行是重要的。 为此目的,提出通过使气流垂直于晶片的表面出现,然后赋予该气体相对于晶片切向的部件,从而产生旋转来旋转晶片。 这种切向部件可以通过提供可以是螺旋形或圆形设计的凹槽产生。

    Apparatus for transferring wafer and ring
    13.
    发明授权
    Apparatus for transferring wafer and ring 有权
    用于转移晶圆和环的装置

    公开(公告)号:US07048488B1

    公开(公告)日:2006-05-23

    申请号:US10009851

    申请日:2000-05-08

    IPC分类号: B65G25/00

    CPC分类号: H01L21/67109 H01L21/67784

    摘要: For wafer processing, wafers are transferred between a thermal treatment chamber and a thermal treatment installation. The treatment chamber has a top section and a bottom section between which the wafer is accommodated during treatment. The thermal treatment installation has a loading chamber having loading means and transport means. The wafer is place on a wafer support while in the loading chamber, wherein the wafer support is configured as a ring having support elements to support the wafer. The wafer support loaded with the wafer is inserted into the thermal treatment chamber so that the wafer and the wafer support are positioned between the top section and the bottom section. The wafer is individually processed in the thermal treatment chamber. After processing the wafer, the wafer support is removed from the thermal treatment chamber.

    摘要翻译: 对于晶片处理,晶片在热处理室和热处理设备之间传送。 处理室具有在处理期间容纳晶片的顶部和底部。 热处理装置具有装载室,其具有装载装置和输送装置。 晶片在装载室中放置在晶片支架上,其中晶片支撑构造为具有支撑元件以支撑晶片的环。 将装载有晶片的晶片载体插入热处理室中,使得晶片和晶片支撑件位于顶部和底部之间。 在热处理室中分别处理晶片。 在处理晶片之后,从热处理室移除晶片支架。

    Method and device for heat treating substrates
    14.
    发明授权
    Method and device for heat treating substrates 有权
    用于热处理基板的方法和装置

    公开(公告)号:US06746237B2

    公开(公告)日:2004-06-08

    申请号:US10151207

    申请日:2002-05-16

    IPC分类号: H05B102

    CPC分类号: H01L21/00 H01L21/67109

    摘要: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

    摘要翻译: 用于基板热处理的方法和装置,其中基板位于在衬底的表面上延伸的加热的基本平坦的炉体附近。 为了在连续处理多个基板时提供可再现的处理,炉体的温度被测量为与基板相邻的表面接近,可以检测到通过基板取出炉体的热量。 每个衬底的引入在这样测量的温度在某一限度内等于期望的初始处理温度Ttrig的时间点发生。