摘要:
The present embodiment relates to a radiation imaging system and the like provided with a solid-state imaging device having a structure enabling reduction of linear noise appearing in an integrated image. The solid-state imaging device comprises: L pieces of imaging pixel region arranged along a direction crossing a moving direction of a relative position of the solid-state imaging device; and L pieces of A/D converter provided corresponding to the L pieces of imaging pixel region. Each imaging pixel region includes pixels arranged two-dimensionally to form an M-row by N-column matrix. Any one of the L pieces of A/D converter executes a dummy A/D conversion once or more times after an A/D conversion of an electric signal from a pixel of an m-th row, before an A/D conversion of an electric signal from a pixel of an (m+1)-th row.
摘要:
A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.
摘要:
An adding unit adds an input signal generated in a signal generating unit connected to a specific pixel electrode portion out of pixel electrode portions arranged around a certain pixel electrode portion to an input signal generated in a signal generating unit connected to the certain pixel electrode portion. A discriminating unit discriminates whether a carrier input pattern coincides with any one of a plurality of discrimination patterns, and the carrier input pattern indicates, per the pixel electrode portion, presence of any carrier received in the certain pixel electrode portion and the pixel electrode portions arranged around the certain pixel electrode portion. The counting unit increments the number of photons in the case where the discriminating unit discriminates that the carrier input pattern coincides with any one of the discrimination patterns and further the input signal output from the adding unit after addition has a value exceeding a predetermined threshold.
摘要:
A radiation image sensor includes a charge generation section and, a circuit board accumulating and transferring charge generated in the charge generation section. The circuit board includes a semiconductor substrate, a capacitive section accumulating the charge generated in the charge generation section, and a MOS transistor in the semiconductor substrate. The MOS transistor includes one end connected to the capacitive section and another end connected to a wire transferring the charge. The capacitive section includes a partial region of the semiconductor substrate, a conductor layer disposed on the partial region and electrically connected to the charge generation section, and an insulating layer interposed between the partial region and the conductor layer.
摘要:
A solid-state imaging device includes a sensor panel section and a readout circuit section. The sensor panel section is disposed on a glass substrate and has a photodetecting section including pixels arrayed in M rows and N columns, row selection lines, and readout lines. The readout circuit section is disposed on a substrate and has N integration circuits. Rectifier circuits are connected between nodes, between N panel-side connection points and the integration circuits, and a constant potential line. Circuit elements having resistance components are connected between the nodes and readout lines.
摘要:
A sensor unit includes a metallic base member, a solid-state imaging element, and amplifier chips. The base member has a first placement surface and a second placement surface. The solid-state imaging element has a photodetecting surface, and is disposed on the first placement surface such that a rear surface and the first placement surface face each other. The amplifier chips are mounted on a substrate disposed on the second placement surface. The base member further has side wall portions facing side surfaces of the solid-state imaging element. The chips and the solid-state imaging element are electrically connected to one another via a bonding wire. The chips are thermally coupled to the base member via a thermal via of the substrate.
摘要:
The present invention relates to a solid-state imaging device, etc. having a structure for capturing a high-resolution image even when any row selecting wiring is disconnected. The solid-state imaging device (1) comprises a photodetecting section (10), a signal reading-out section (20), a row selecting section (30), a column selecting section (40), an overflow preventing section (50), and a controlling section (60). The photodetecting section (10) has M×N pixel portions P1,1 to PM,N two-dimensionally arranged in a matrix of M rows and N columns, and each of the pixel portions P1,1 to PM,N includes a photodiode that generates charge of an amount according to an incident light intensity and a reading-out switch connected to the photodiode. Each of the N pixel portions Pm,1 to Pm,N belonging to an m-th row is connected to the row selecting section (30) and the overflow preventing section (50) by an m-th row selecting wiring LV,m.
摘要:
A solid-state image pickup apparatus 1A includes a photodetecting section 10A and a signal readout section 20 etc. In the photodetecting section 10A, M×N pixel units P1,1 to PM,N are arrayed in M rows and N columns. When in a first imaging mode, a voltage value according to an amount of charges generated in a photodiode of each of the M×N pixel units in the photodetecting section 10A is output from the signal readout section 20. When in a second imaging mode, a voltage value according to an amount of charges generated in the photodiode of each pixel unit included in consecutive M1 rows in the photodetecting section 10A is output from the signal readout section 20. When in the second imaging mode than when in the first imaging mode, the readout pixel pitch in frame data is smaller, the frame rate is higher, and the gain being a ratio of an output voltage value to an input charge amount in the signal readout section 20 is greater.
摘要:
A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.