公开(公告)号：US20200028323A1

公开(公告)日：2020-01-23

申请号：US16489495

申请日：2017-02-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond C. Beausoleil

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/34 ,  G02B6/122 ,  G02B6/12

Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

公开(公告)号：US20190331854A1

公开(公告)日：2019-10-31

申请号：US15963570

申请日：2018-04-26

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/122 ,  H01S3/063 ,  H01S3/23 ,  H01S5/10 ,  H01S5/20 ,  H01S5/02 ,  G02B6/12 ,  G02B6/13

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

公开(公告)号：US10396521B2

公开(公告)日：2019-08-27

申请号：US15720493

申请日：2017-09-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Raymond G. Beausoleil ,  Di Liang ,  Chong Zhang ,  David Kielpinski

IPC: H01S3/10 ,  H01S5/06 ,  H01S5/12 ,  H01S3/098 ,  H01S3/13 ,  H01S3/30 ,  H01S3/00 ,  H01S5/10

Abstract: A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

公开(公告)号：US10069274B2

公开(公告)日：2018-09-04

申请号：US15316157

申请日：2014-07-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Geza Kurczveil

IPC: G02B6/00 ,  H01S5/06 ,  H01S5/22

Abstract: One example includes an optical device system. The system includes a waveguide that includes a fixed waveguide portion to propagate an optical signal, a semiconductor membrane layer, and a tunable air gap that separates the fixed waveguide portion and the semiconductor membrane layer. The system also includes an optical tuning system to move the semiconductor membrane layer with respect to the fixed waveguide portion in response to a control signal to control a separation distance of the tunable air gap to tune a characteristic of the optical signal.

公开(公告)号：US20240184182A1

公开(公告)日：2024-06-06

申请号：US18062040

申请日：2022-12-06

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Yiwei Peng ,  Zhuoran Fang ,  Bassem Tossoun ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02F1/225 ,  G02F1/21

CPC classification number: G02F1/2257 ,  G02F1/212

Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.

公开(公告)号：US11539440B2

公开(公告)日：2022-12-27

申请号：US16947056

申请日：2020-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Geza Kurczveil ,  Di Liang ,  Sudharsanan Srinivasan ,  Raymond G. Beausoleil

IPC: H04B10/00 ,  H04B10/50 ,  H04J14/00

Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.

公开(公告)号：US11105988B2

公开(公告)日：2021-08-31

申请号：US16457776

申请日：2019-06-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Zhihong Huang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/42 ,  H04J14/02 ,  H01S5/343 ,  H01S5/34 ,  G02B6/293 ,  H01L31/18 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01S5/02 ,  H01S5/22 ,  H01L31/0203 ,  H01L31/113 ,  H01L31/0232 ,  H01S5/30 ,  H01S5/026 ,  H04B10/80 ,  H04B10/40 ,  H01S5/065 ,  H01S5/02234

Abstract: A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.

公开(公告)号：US20210033807A1

公开(公告)日：2021-02-04

申请号：US16528182

申请日：2019-07-31

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Paul Kessler Rosenberg ,  Geza Kurczveil

IPC: G02B6/43 ,  G02B6/42

Abstract: Examples herein relate to optoelectronic systems or modules. In particular, implementations herein relate to an optoelectronic module or system that includes a substrate having opposing first and second sides and an optoelectronic component having opposing first and second sides flip chip assembled to the substrate. The optoelectronic component is configured to emit at least one optical signal to the substrate, receive at least one optical signal from the substrate, or both. The optoelectronic system further includes an underfill exclusion structure configured to prevent underfill material dispensed between the optoelectronic component and the substrate from flowing into an optical area or path of the at least one optical signal transmitted between the optoelectronic component and the substrate. The underfill exclusion structure is spaced apart from at least one of the optoelectronic component or the substrate.

公开(公告)号：US10680407B2

公开(公告)日：2020-06-09

申请号：US15483678

申请日：2017-04-10

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/065 ,  H01S5/068 ,  H01S5/14 ,  H01S5/02 ,  H01S5/026 ,  H01S3/106 ,  H01S5/34

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

公开(公告)号：US20200067274A1

公开(公告)日：2020-02-27

申请号：US16108399

申请日：2018-08-22

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Chong Zhang ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/50 ,  H01S5/022 ,  H01S5/343 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34

Abstract: A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.