公开(公告)号：US20170322021A1

公开(公告)日：2017-11-09

申请号：US15329519

申请日：2015-08-03

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuji TAKAGI ,  Fumihiko FUKUNAGA ,  Yasunori GOTO

IPC: G01B15/04 ,  G06K9/20

CPC classification number: G01B15/04 ,  G03F7/70633 ,  G06K9/20 ,  G06K2009/2045 ,  G06T7/001 ,  G06T7/32 ,  G06T2207/10024 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: To address the problem in which when measuring the overlay of patterns formed on upper and lower layers of a semiconductor pattern by comparing a reference image and measurement image obtained through imaging by an SEM, the contrast of the SEM image of the pattern of the lower layer is low relative to that of the SEM image of the pattern of the upper layer and alignment state verification is difficult even if the reference image and measurement image are superposed on the basis of measurement results, the present invention determines the amount of positional displacement of patterns of an object of overlay measurement from a reference image and measurement image obtained through imaging by an SEM, carries out differential processing on the reference image and measurement image, aligns the reference image and measurement image that have been subjected to differential processing on the basis of the positional displacement amount determined previously, expresses the gradation values of the aligned differential reference image and differential measurement image as brightnesses of colors that differ for each image, superposes the images, and displays the superposed images along with the determined positional displacement amount.

公开(公告)号：US20190362933A1

公开(公告)日：2019-11-28

申请号：US16332212

申请日：2017-09-14

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuji TAKAGI ,  Fumihiko FUKUNAGA ,  Yasunori GOTO

IPC: H01J37/28 ,  H01J37/26 ,  G01N23/2251 ,  G01N21/47 ,  G01N21/95 ,  H01J37/22

Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

公开(公告)号：US20190237296A1

公开(公告)日：2019-08-01

申请号：US16260988

申请日：2019-01-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuko OTANI ,  Yohei MINEKAWA ,  Takashi NOBUHARA ,  Nobuhiko KANZAKI ,  Takehiro HIRAI ,  Miyuki FUKUDA ,  Yuya ISOMAE ,  Kaori YAESHIMA ,  Yuji TAKAGI

IPC: H01J37/22 ,  G06T7/73 ,  G06T7/13 ,  G06T7/60 ,  G02B21/00 ,  G02B21/36 ,  G06T7/00 ,  H01J37/28

Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

公开(公告)号：US20180240225A1

公开(公告)日：2018-08-23

申请号：US15898366

申请日：2018-02-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Minoru HARADA ,  Yuji TAKAGI ,  Naoaki KONDO ,  Takehiro HIRAI

IPC: G06T5/50 ,  G06T5/00 ,  G06T7/00 ,  H01J37/22 ,  H01J37/28 ,  H01J37/20

CPC classification number: G06T5/50 ,  G06T5/003 ,  G06T7/0008 ,  G06T7/001 ,  G06T2207/10016 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148 ,  H01J37/20 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/221 ,  H01J2237/2817

Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

公开(公告)号：US20180025482A1

公开(公告)日：2018-01-25

申请号：US15720411

申请日：2017-09-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Minoru HARADA ,  Ryo NAKAGAKI ,  Fumihiko FUKUNAGA ,  Yuji TAKAGI

IPC: G06T7/00 ,  H01L23/544

CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes is characterized in including an image capturing step for capturing images of a plurality of areas of the semiconductor device, a reference image setting step for setting a reference image based on a plurality of the images captured in the image capturing step, a difference quantifying step for quantifying a difference between the reference image set in the reference image setting step and the plurality of images captured in the image capturing step, and an overlay calculating step for calculating the overlay based on the difference quantified in the difference quantifying step.

公开(公告)号：US20180019097A1

公开(公告)日：2018-01-18

申请号：US15544788

申请日：2015-12-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Minoru HARADA ,  Yuji TAKAGI ,  Takehiro HIRAI

IPC: H01J37/22 ,  G06T5/50 ,  G01B15/04 ,  G06T7/00

CPC classification number: H01J37/22 ,  G01B15/04 ,  G01B2210/48 ,  G01N23/22 ,  G06T5/50 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: An inspection method uses a charged particle microscope to observe a sample and view a defect site or a circuit pattern. A plurality of images is detected by a plurality of detectors and a mixed image is generated by automatically adjusting and mixing weighting factors required when the plurality of images are synthesized with each other. The sample is irradiated and scanned with a charged particle beam so that the plurality of detectors arranged at different positions from the sample detects a secondary electron or a reflected electron generated from the sample. The mixed image is generated by mixing the plurality of images of the sample with each other for each of the plurality of detectors, which are obtained by causing each of the plurality of detectors arranged at the different positions to detect the secondary electron or the reflected electron. The generated mixed image is displayed on a screen.