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    Method and Apparatus for Reviewing Defects
    1.
    发明申请
    Method and Apparatus for Reviewing Defects 审中-公开
    检查缺陷的方法和装置

    公开(公告)号：US20160211112A1

    公开(公告)日：2016-07-21

    申请号：US14995813

    申请日：2016-01-14

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Toshiyuki NAKAO ,  Yuko OTANI ,  Takehiro HIRAI

    IPC: H01J37/22 ,  H01J37/285

    CPC classification number: H01J37/226 ,  H01J2237/28 ,  H01L22/12 ,  H01L22/20

    Abstract: A defect reviewing apparatus includes an illumination optical system that irradiates a sample with laser, a detection optical system that detects reflected light or scattered light from the sample, a processing portion that calculates coordinates of a defect based on the reflected light or scattered light detected, and an electron microscope that reviews the defect based on the coordinates of the defect calculated by the processing portion. In the illumination optical system, inspection modes are switched over based on defect information acquired in another inspection equipment.

    Abstract translation: 缺陷检查装置包括：用激光照射样品的照明光学系统，检测来自样品的反射光或散射光的检测光学系统;基于所检测的反射光或散射光来计算缺陷的坐标的处理部， 以及基于由处理部计算出的缺陷坐标来检查缺陷的电子显微镜。 在照明光学系统中，基于在另一检查设备中获取的缺陷信息切换检查模式。

    SAMPLE OBSERVATION METHOD AND SAMPLE OBSERVATION DEVICE
    4.
    发明申请
    SAMPLE OBSERVATION METHOD AND SAMPLE OBSERVATION DEVICE 审中-公开

    公开(公告)号：US20180019097A1

    公开(公告)日：2018-01-18

    申请号：US15544788

    申请日：2015-12-21

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Minoru HARADA ,  Yuji TAKAGI ,  Takehiro HIRAI

    IPC: H01J37/22 ,  G06T5/50 ,  G01B15/04 ,  G06T7/00

    CPC classification number: H01J37/22 ,  G01B15/04 ,  G01B2210/48 ,  G01N23/22 ,  G06T5/50 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: An inspection method uses a charged particle microscope to observe a sample and view a defect site or a circuit pattern. A plurality of images is detected by a plurality of detectors and a mixed image is generated by automatically adjusting and mixing weighting factors required when the plurality of images are synthesized with each other. The sample is irradiated and scanned with a charged particle beam so that the plurality of detectors arranged at different positions from the sample detects a secondary electron or a reflected electron generated from the sample. The mixed image is generated by mixing the plurality of images of the sample with each other for each of the plurality of detectors, which are obtained by causing each of the plurality of detectors arranged at the different positions to detect the secondary electron or the reflected electron. The generated mixed image is displayed on a screen.

    DEFECT IMAGE CLASSIFICATION DEVICE AND DEFECT IMAGE CLASSIFICATION METHOD
    5.
    发明申请
    DEFECT IMAGE CLASSIFICATION DEVICE AND DEFECT IMAGE CLASSIFICATION METHOD 审中-公开

    公开(公告)号：US20180174000A1

    公开(公告)日：2018-06-21

    申请号：US15579047

    申请日：2015-06-04

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuji TAKAGI ,  Minoru HARADA ,  Takehiro HIRAI

    IPC: G06K9/62 ,  G01N21/88 ,  G01N23/2251

    CPC classification number: G06K9/6262 ,  G01N21/8851 ,  G01N21/9501 ,  G01N23/2251 ,  G01N2021/8854 ,  G01N2021/8887 ,  G01N2223/6116 ,  G06K9/03 ,  G06K9/4628 ,  G06K9/6267 ,  G06K9/6271

    Abstract: In a defect classification operation in which ADC and visual classification are both used, a problem with the visual classification in the related art is solved, and then the high-reliability performance evaluation of the ADC and the update of the ADC learning data set are made possible, using both the ADC and the visual classification, or both the ADC and one other classification apparatus.An apparatus that classifies defect images is configured to include: a storage unit in which the defect images that are obtained by being captured with separate image capture means are stored; an image selection unit that selects images from among the defect images that are stored in the storage unit, using information on defect classes into which defects are classified in a plurality of separate defect classification means; an image classification unit that classifies the images which are selected in the image selection unit, based on a classification recipe; a classification performance evaluation unit that evaluates classification performance of the image classification unit based on a result of the classification of the images; and a learning update unit that updates the classification recipe of the image classification unit using the images that are selected in the image selection unit in a case where the result of the evaluation in the classification performance evaluation unit does not satisfy a reference that is in advance set.

    DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE
    6.
    发明申请
    DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE 有权
    缺陷观察方法和缺陷观察装置

    公开(公告)号：US20150332445A1

    公开(公告)日：2015-11-19

    申请号：US14652198

    申请日：2013-12-06

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Minoru HARADA ,  Yuji TAKAGI ,  Ryo NAKAGAKI ,  Takehiro HIRAI ,  Hirohiko KITSUKI

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G01N21/9501 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

    Abstract translation: 本发明的目的是容易地从待观察的样品中提取可以被标记为缺陷或“妨碍”（错误地检测制造公差等的部分）的缺陷候选，并且允许参数相关 观察加工易于调整。 该缺陷观察方法包括：成像步骤，基于来自检查装置的缺陷信息，对要检查的对象进行成像，并获得与缺陷图像相对应的缺陷图像和参考图像; 参数确定步骤，通过使用从参考图像获取的第一特征集分布和在成像步骤中捕获的缺陷图像来确定在缺陷提取中使用的第一参数，以及从参考图像获取的第二特征网分布; 以及观察步骤，用于观察使用在参数确定步骤中确定的第一参数。 本发明可以应用于观察在制造半导体晶片期间产生的缺陷的方法。

    Defect Observation Method and Defect Observation Device
    7.
    发明申请
    Defect Observation Method and Defect Observation Device 有权
    缺陷观察方法和缺陷观察装置

    公开(公告)号：US20150302568A1

    公开(公告)日：2015-10-22

    申请号：US14650515

    申请日：2013-11-29

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Takehiro HIRAI ,  Ryo NAKAGAKI ,  Minoru HARADA

    IPC: G06T7/00 ,  G06K9/46

    CPC classification number: G06T7/001 ,  G01N23/2254 ,  G01N2223/418 ,  G01N2223/611 ,  G06K9/00 ,  G06K9/46 ,  G06K9/4661 ,  G06K2009/4666 ,  G06T2207/30148

    Abstract: Cases in which defects are analyzed in a manufacturing process stage in which a pattern is not formed or in a manufacturing process in which a pattern formed on a lower layer does not appear in the captured image are increasing. However, in these cases, there is a problem of not being able to synthesize a favorable reference image and failing to detect a defect when a periodic pattern cannot be recognized in the pattern. In the present invention, a defect occupation rate, which is the percentage of an image being inspected occupied by a defect region, is found, it is determined whether the defect occupation rate is higher or lower than a threshold, and, in accordance with the determination results, it is determined whether to create, as the reference image, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected. In particular, when the defect occupation rate is low, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected is used as the reference image.

    Abstract translation: 在其中未形成图案的制造过程阶段或在下层中形成的图案没有出现在捕获图像中的制造工艺阶段中分析缺陷的情况日益增加。 然而，在这些情况下，在图案中不能识别出周期性图案时，存在不能合成有利的参考图像而不能检测到缺陷的问题。 在本发明中，找到作为缺陷区域所占据的被检查图像的百分比的缺陷占有率，确定缺陷占有率是高于还是低于阈值，并且根据 确定结果是否确定是否创建包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素作为参考图像的图像。 特别地，当缺陷占有率低时，包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素的图像被用作参考图像。

    DEFECT OBSERVATION SYSTEM AND DEFECT OBSERVATION METHOD FOR SEMICONDUCTOR WAFER
    9.
    发明申请
    DEFECT OBSERVATION SYSTEM AND DEFECT OBSERVATION METHOD FOR SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20200083017A1

    公开(公告)日：2020-03-12

    申请号：US16567687

    申请日：2019-09-11

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Minoru HARADA ,  Yuji TAKAGI ,  Naoaki KONDO ,  Takehiro HIRAI ,  Yohei MINEKAWA

    IPC: H01J37/147 ,  G01N21/956 ,  G01N21/95 ,  G06T7/00 ,  G06T7/12 ,  G06T5/50 ,  H01L21/67 ,  H01J37/28

    Abstract: In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

    Defect Observation Device and Defect Observation Method
    10.
    发明申请
    Defect Observation Device and Defect Observation Method 审中-公开

    公开(公告)号：US20180266968A1

    公开(公告)日：2018-09-20

    申请号：US15533424

    申请日：2014-12-10

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Takehiro HIRAI ,  Hideki NAKAYAMA ,  Kenichi NISHIGATA

    IPC: G01N21/956 ,  G01N21/95 ,  H01J37/28 ,  H01L21/66

    CPC classification number: G01N21/956 ,  G01N21/9501 ,  G01N2223/6116 ,  H01J37/28 ,  H01L22/12

    Abstract: In a scheme for analyzing low magnification defect images and determining whether or not a defect detection method using cell comparison is applicable, if a defect detection method using cell comparison cannot be applied and the proportion transitioning to a defect detection method using die comparison increases, throughput may decrease even more than starting out with defect detection by a defect detection method using die comparison. The purpose of present invention is to carry out high precision defect detection with a stable throughput. In the present invention, the defect detection processing mode applied for detecting defects from the defect image is determined using a reference image, and defects are detected from the defect image by the defect detection processing mode that has been determined.

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