Negative electrode structure for non-aqueous lithium secondary battery
    11.
    发明授权
    Negative electrode structure for non-aqueous lithium secondary battery 有权
    非水锂二次电池负电极结构

    公开(公告)号:US08475957B2

    公开(公告)日:2013-07-02

    申请号:US12426118

    申请日:2009-04-17

    IPC分类号: H01M4/00 H01M4/02 H01M4/58

    摘要: The present invention relates to a negative electrode structure for use in a non-aqueous electrolyte secondary battery and a method of making such negative electrode structure. The negative electrode structure comprises: a monolithic anode comprising a semiconductor material, and a uniform ion transport structure disposed at the monolithic anode surface for contacting a non-aqueous electrolyte, wherein the uniform ion transport structure serves as a current collector and the negative electrode structure does not contain another current collector. The present invention also relates to a battery comprising the negative electrode structure of the present invention, a cathode, and a non-aqueous electrolyte.

    摘要翻译: 本发明涉及一种用于非水电解质二次电池的负极结构体及其制造方法。 负极结构包括:包含半导体材料的单片阳极和设置在整体式阳极表面处的用于接触非水电解质的均匀离子传输结构,其中均匀的离子传输结构用作集电器,负极结构 不包含另一个集电器。 本发明还涉及包含本发明的负极结构,阴极和非水电解质的电池。

    METHOD FOR CONTROLLING THE CHARGING OR DISCHARGING PROCESS OF A SECONDARY BATTERY WITH AUXILIARY ELECTRODE
    12.
    发明申请
    METHOD FOR CONTROLLING THE CHARGING OR DISCHARGING PROCESS OF A SECONDARY BATTERY WITH AUXILIARY ELECTRODE 审中-公开
    用辅助电极控制二次电池充电或放电过程的方法

    公开(公告)号:US20120176093A1

    公开(公告)日:2012-07-12

    申请号:US13396935

    申请日:2012-02-15

    IPC分类号: H02J7/00

    摘要: The present invention includes three-dimensional secondary battery cells comprising an electrolyte, a cathode, an anode, and an auxiliary electrode. The cathode, the anode, and the auxiliary electrode have a surface in contact with the electrolyte. The anode and the cathode are electrolytically coupled. The auxiliary electrode is electrolytically coupled and electrically coupled to at least one of the anode or the cathode. Electrically coupled means directly or indirectly connected in series by wires, traces or other connecting elements. The average distance between the surface of the auxiliary electrode and the surface of the coupled cathode or the coupled anode is between about 1 micron and about 10,000 microns. The average distance means the average of the shortest path for ion transfer from every point on the coupled cathode or anode to the auxiliary electrode.

    摘要翻译: 本发明包括包含电解质,阴极,阳极和辅助电极的三维二次电池。 阴极,阳极和辅助电极具有与电解质接触的表面。 阳极和阴极电解耦合。 辅助电极被电解耦合并电耦合到阳极或阴极中的至少一个。 电耦合装置通过电线,迹线或其他连接元件串联连接或间接连接。 辅助电极的表面与耦合阴极或耦合阳极的表面之间的平均距离在约1微米至约10,000微米之间。 平均距离是指从耦合的阴极或阳极到辅助电极的每个点的离子转移的最短路径的平均值。

    Nonaqueous electrolyte secondary battery anode material with a uniform metal-semiconductor alloy layer
    13.
    发明授权
    Nonaqueous electrolyte secondary battery anode material with a uniform metal-semiconductor alloy layer 有权
    非水电解质二次电池负极材料具有均匀的金属 - 半导体合金层

    公开(公告)号:US08524395B2

    公开(公告)日:2013-09-03

    申请号:US13396958

    申请日:2012-02-15

    摘要: The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.

    摘要翻译: 本发明涉及非水电解质二次电池和用于非水电解质二次电池的耐用阳极材料和阳极。 本发明还涉及这些阳极材料的制造方法。 在本发明中,通过将阳极材料的一部分与位移溶液接触,在阳极材料上形成金属 - 半导体合金层。 位移溶液包含待沉积的金属的离子和用于将半导体的一部分溶解在阳极材料中的溶解组分。 当阳极材料与位移溶液接触时,溶解组分溶解阳极材料中的半导体的一部分,从而提供电子以减少金属离子并将金属沉积在阳极材料上。 沉积后,阳极材料和金属被退火以形成均匀的金属 - 半导体合金层。

    RHODIUM SULFATE PRODUCTION FOR RHODIUM PLATING
    15.
    发明申请
    RHODIUM SULFATE PRODUCTION FOR RHODIUM PLATING 审中-公开
    硫酸钠生产硫酸钠

    公开(公告)号:US20080063594A1

    公开(公告)日:2008-03-13

    申请号:US11531558

    申请日:2006-09-13

    IPC分类号: C01B17/96

    摘要: Rhodium solutions, methods for plating structures using such rhodium solutions, and rhodium plated structures are described. The rhodium solutions can contain an increased concentration of rhodium in the form of a monomer sulfate salt. The rhodium solutions can be formed under conditions of controlled pH and controlled temperatures that increase the uniformity of the chemical composition from one rhodium solution to another. As a result, the shelf life of the rhodium solutions and plating baths using these rhodium solutions can be increased. Rhodium platings formed from these solutions can contain a low degree of dendrites, or even no dendrites. The rhodium platings can also exhibit less internal stress and can be less susceptible to cracking.

    摘要翻译: 描述了铑溶液,使用这种铑溶液的电镀结构的方法和镀铑结构。 铑溶液可以含有增加浓度的单体硫酸盐形式的铑。 铑溶液可以在受控的pH和受控温度的条件下形成,这增加了化学成分从一种铑溶液到另一种铑溶液的均匀性。 结果,可以增加使用这些铑溶液的铑溶液和电镀浴的保存期限。 由这些溶液形成的铑电镀可以含有低度的枝晶,甚至不含枝晶。 铑镀层也可以表现出更小的内应力,并且不易开裂。

    Methods and systems for electroplating wafers
    16.
    发明申请
    Methods and systems for electroplating wafers 审中-公开
    电镀晶圆的方法和系统

    公开(公告)号:US20060191784A1

    公开(公告)日:2006-08-31

    申请号:US11069800

    申请日:2005-02-28

    IPC分类号: C25D17/00 C25D5/20 C25D5/02

    摘要: Improved methods and systems for electroplating wafers are described herein. The method includes the acts of introducing a wafer which is coupled to an electrode into an electroplating cell having a counter electrode; maintaining a flow of a plating solution through the cell for electroplating the wafer; removing the wafer from the cell; stopping the flow of the plating solution through the cell; maintaining a volume of plating solution within the cell sufficient to keep the counter electrode submerged during stoppage of flow; removing the plating solution within the cell; and repeating the above steps for a subsequent wafer. By stopping the flow of plating solution after completion of plating one or more wafers, a consumption rate of additives enhancing electroplating properties is reduced, a production rate of breakdown products produced during electroplating is reduced, plating solution useable life is increased, and a need for plating solution analysis is reduced.

    摘要翻译: 本文描述了用于电镀晶片的改进的方法和系统。 该方法包括将与电极耦合的晶片引入具有对电极的电镀单元中的动作; 保持电镀溶液流过用于电镀晶片的电池; 从电池中取出晶片; 停止电镀溶液通过电池的流动; 保持电池内的电镀液体积足以使反电极在流动停止期间淹没; 去除细胞内的电镀液; 并重复上述步骤以用于随后的晶片。 通过在一个或多个晶片的电镀完成之后停止电镀溶液的流动,降低电镀性能的添加剂的消耗速率降低,电镀期间产生的击穿产物的生产率降低,电镀溶液的使用寿命增加, 电镀液分析减少。

    Magnetic head for hard disk drive having improved magnetic shield for MR sensor
    17.
    发明申请
    Magnetic head for hard disk drive having improved magnetic shield for MR sensor 失效
    用于硬盘驱动器的磁头具有改进的MR传感器磁屏蔽

    公开(公告)号:US20060002022A1

    公开(公告)日:2006-01-05

    申请号:US10883141

    申请日:2004-06-30

    摘要: A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.

    摘要翻译: 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上,该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层,并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后,进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G1绝缘层,然后在绝缘层上制造磁头传感器元件。

    Method for reducing pole height loss in the formation of a write pole for a magnetic write head
    20.
    发明授权
    Method for reducing pole height loss in the formation of a write pole for a magnetic write head 失效
    降低写入磁头写磁极的磁极高度损失的方法

    公开(公告)号:US07263762B2

    公开(公告)日:2007-09-04

    申请号:US10957038

    申请日:2004-09-30

    IPC分类号: G11B5/127 G11B5/187

    摘要: A method for reducing plated pole height loss in the formation of a write pole for a magnetic write head is disclosed. The method includes forming a conductive layer on a thin film substrate, forming a photoresist layer on the conductive layer and forming a trench in the photoresist layer. A thick seed layer is then placed on the trench and on the photoresist layer surface using a collimator. Moreover, the process includes plating while applying a voltage to the thin film substrate where the electrically isolated seed layer is removed and the trench is filled with plating material, removing the photoresist layer, and removing the exposed portions of the conductive layer on the thin film substrate.

    摘要翻译: 本发明公开了一种在形成写磁头写磁极时降低电极高度损耗的方法。 该方法包括在薄膜基板上形成导电层,在导电层上形成光致抗蚀剂层,并在光刻胶层中形成沟槽。 然后使用准直器将厚的种子层放置在沟槽和光致抗蚀剂层表面上。 此外,该方法包括电镀,同时向薄膜基板施加电压,其中去除电隔离种子层,并且沟槽填充有电镀材料,去除光致抗蚀剂层,以及去除薄膜上的导电层的暴露部分 基质。