摘要:
The present invention relates to a negative electrode structure for use in a non-aqueous electrolyte secondary battery and a method of making such negative electrode structure. The negative electrode structure comprises: a monolithic anode comprising a semiconductor material, and a uniform ion transport structure disposed at the monolithic anode surface for contacting a non-aqueous electrolyte, wherein the uniform ion transport structure serves as a current collector and the negative electrode structure does not contain another current collector. The present invention also relates to a battery comprising the negative electrode structure of the present invention, a cathode, and a non-aqueous electrolyte.
摘要:
The present invention includes three-dimensional secondary battery cells comprising an electrolyte, a cathode, an anode, and an auxiliary electrode. The cathode, the anode, and the auxiliary electrode have a surface in contact with the electrolyte. The anode and the cathode are electrolytically coupled. The auxiliary electrode is electrolytically coupled and electrically coupled to at least one of the anode or the cathode. Electrically coupled means directly or indirectly connected in series by wires, traces or other connecting elements. The average distance between the surface of the auxiliary electrode and the surface of the coupled cathode or the coupled anode is between about 1 micron and about 10,000 microns. The average distance means the average of the shortest path for ion transfer from every point on the coupled cathode or anode to the auxiliary electrode.
摘要:
The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
摘要:
A battery includes an anode and a cathode. An electrolyte material is disposed between the anode and the cathode. A separator is disposed between the anode and the cathode. The separator comprises an anodized metal oxide layer haying substantially straight and parallel through-pores, wherein the anodized metal oxide of the porous anodized metal oxide layer is selected from the group consisting of aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tungsten oxide, tantalum oxide, and hafnium oxide.
摘要:
Rhodium solutions, methods for plating structures using such rhodium solutions, and rhodium plated structures are described. The rhodium solutions can contain an increased concentration of rhodium in the form of a monomer sulfate salt. The rhodium solutions can be formed under conditions of controlled pH and controlled temperatures that increase the uniformity of the chemical composition from one rhodium solution to another. As a result, the shelf life of the rhodium solutions and plating baths using these rhodium solutions can be increased. Rhodium platings formed from these solutions can contain a low degree of dendrites, or even no dendrites. The rhodium platings can also exhibit less internal stress and can be less susceptible to cracking.
摘要:
Improved methods and systems for electroplating wafers are described herein. The method includes the acts of introducing a wafer which is coupled to an electrode into an electroplating cell having a counter electrode; maintaining a flow of a plating solution through the cell for electroplating the wafer; removing the wafer from the cell; stopping the flow of the plating solution through the cell; maintaining a volume of plating solution within the cell sufficient to keep the counter electrode submerged during stoppage of flow; removing the plating solution within the cell; and repeating the above steps for a subsequent wafer. By stopping the flow of plating solution after completion of plating one or more wafers, a consumption rate of additives enhancing electroplating properties is reduced, a production rate of breakdown products produced during electroplating is reduced, plating solution useable life is increased, and a need for plating solution analysis is reduced.
摘要:
A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
摘要:
The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a solution containing metals ions and a dissolution component. When the anode material is contacted with the solution, the dissolution component dissolves a part of the semiconductor material in the anode material and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer. The anode material of the present invention can be in a monolithic form or a particle form. When the anode material is in a particle form, the particulate anode material can be further shaped and sintered to agglomerate the particulate anode material.
摘要:
A system for plating according to one embodiment includes a plating cell containing plating solution; an anode in contact with the plating solution; a cathode in contact with the plating solution; and a hydrogen electrode in contact with the plating solution.
摘要:
A method for reducing plated pole height loss in the formation of a write pole for a magnetic write head is disclosed. The method includes forming a conductive layer on a thin film substrate, forming a photoresist layer on the conductive layer and forming a trench in the photoresist layer. A thick seed layer is then placed on the trench and on the photoresist layer surface using a collimator. Moreover, the process includes plating while applying a voltage to the thin film substrate where the electrically isolated seed layer is removed and the trench is filled with plating material, removing the photoresist layer, and removing the exposed portions of the conductive layer on the thin film substrate.