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33 条记录 (耗时 0.022 秒)

    Method of fabricating SOI substrate
    11.
    发明授权
    Method of fabricating SOI substrate 失效
    制造SOI衬底的方法

    公开(公告)号：US6074928A

    公开(公告)日：2000-06-13

    申请号：US23132

    申请日：1998-02-12

    申请人： Atsushi Ogura

    发明人： Atsushi Ogura

    IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

    CPC分类号： H01L21/76243

    摘要： An oxygen ion is implanted into a silicon substrate at a dose of 3.times.10.sup.17 (cm.sup.-2) or lower. Then, the silicon substrate is heated at 1250.degree. C. or lower for 40 minute or longer. And the silicon substrate is heated at 1300.degree. C. or higher in an inert gas atmosphere. Further, the silicon substrate is heated at 1300.degree. C. or higher in an atmosphere containing an oxygen gas in an amount of 1% by volume or more.

    摘要翻译： 将氧离子以3×10 17（cm -2）以下的剂量注入到硅衬底中。 然后，将硅衬底在1250℃或更低温度下加热40分钟以上。 并且在惰性气体气氛中将硅衬底加热至1300℃或更高。 此外，在含有1体积％以上的氧气的气氛中，将硅衬底加热至1300℃以上。

    Method of fabricating SOI substrate
    12.
    发明授权
    Method of fabricating SOI substrate 失效
    制造SOI衬底的方法

    公开(公告)号：US5888297A

    公开(公告)日：1999-03-30

    申请号：US570232

    申请日：1995-12-11

    申请人： Atsushi Ogura

    发明人： Atsushi Ogura

    IPC分类号： H01L21/20 ,  C30B31/22 ,  C30B33/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L27/12 ,  C30B25/02

    CPC分类号： C30B29/06 ,  C30B31/22 ,  C30B33/00

    摘要： The invention provides a method of fabricating an SOI substrate including the steps of introducing crystal defects at a desired depth in a silicon substrate, and thereafter, implanting oxygen or nitrogen ions into the silicon substrate, and thermally annealing the silicon substrate. The method of the present invention makes it possible to fabricate an SOI substrate with fewer crystal defects and lower fabrication cost than is possible according to the prior art.

    摘要翻译： 本发明提供一种制造SOI衬底的方法，包括以下步骤：在硅衬底中以期望的深度引入晶体缺陷，然后将氧或氮离子注入到硅衬底中，并对硅衬底进行热退火。 与现有技术相比，本发明的方法可以制造出具有较少晶体缺陷和较低制造成本的SOI衬底。

    Long decay luminescent material
    13.
    发明授权
    Long decay luminescent material 失效
    长衰变发光材料

    公开(公告)号：US5853614A

    公开(公告)日：1998-12-29

    申请号：US897000

    申请日：1997-07-21

    申请人： Qinglong Hao ,  Qian Xu ,  Jun Li ,  Pengcheng Li ,  Baochan Liu ,  Atsushi Ogura ,  Qingfen Hao

    发明人： Qinglong Hao ,  Qian Xu ,  Jun Li ,  Pengcheng Li ,  Baochan Liu ,  Atsushi Ogura ,  Qingfen Hao

    IPC分类号： C09D5/22 ,  C09K11/77 ,  C09K11/08 ,  C09K11/55 ,  C09K11/63

    CPC分类号： C09D5/22 ,  C09K11/774 ,  C09K11/7797

    摘要： Long decay luminescent materials having improved long decay time and improved high brightness is represented by the formula as Sr.sub.0.9995 .about..sub.0.998 Eu.sub.0.0005 .about..sub.0.002)Al.sub.2 O.sub.4 .multidot.(Sr.sub.0.9995 .about..sub.0.998 Eu.sub.0.0005 .about..sub.0.002)O .multidot.n(Al.sub.1-a-b B.sub.b Dy.sub.a).sub.2 O.sub.3 in it a=0.0005.about.0.0002, b=0.0001.about.0.35, n=1.about.8 and the method for manufacturing the long decay luminescent materials is characterized in heating the raw materials as SrCo.sub.3, .alpha. type alumina, .gamma. type alumina, boron-containing compound, Eu.sub.2 O.sub.3 and Dy.sub.2 O.sub.3 gradually from 400.degree. C. up to 1250.degree. C..about.1600.degree. C. during 7.about.10 hours, firing it at 1250.degree. C..about.1600.degree. C. for 3.about.5 hours and then cooing it gradually from 1250.degree. C..about.1600.degree. C. down to 200.degree. C. during 7.about.10 hours and the heating, firing and cooling processes are all conducted under the condition of existence of carbon.

    摘要翻译： 具有改善的长衰减时间和改善的高亮度的长衰减发光材料由以下公式表示：Sr0.9995 DIFFERENCE 0.998Eu0.0005差异0.002）Al 2 O 4 x（Sr 0.9995差异0.998 Eu 0.0006 D 0.02 0.002）O xn（Al 1-a- bBbDya）2O3其中a = 0.0005差异0.0002，b = 0.0001分辨率0.35，n = 1差分8及其制造长衰变发光材料的方法的特征在于将原料加热为SrCo 3，α型氧化铝，γ型氧化铝， 含硼化合物，Eu 2 O 3和Dy 2 O 3从400℃逐渐降至1250℃。差速1600℃，7℃差10小时，在1250℃下焙烧5分钟，然后3小时 在12小时内将其从1250℃降温至1600℃，达到200℃，加热，焙烧和冷却过程均在碳存在的条件下进行。

    Semiconductor device and method for manufacturing same
    14.
    发明授权
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US07701018B2

    公开(公告)日：2010-04-20

    申请号：US10593300

    申请日：2005-03-22

    申请人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

    发明人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

    IPC分类号： H01L27/088

    CPC分类号： H01L29/785 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/6681 ,  H01L2029/7858

    摘要： A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

    摘要翻译： 一种包括第一半导体区域和第二半导体区域的半导体器件，（a）其中场效应晶体管由包括从衬底向上突出的至少一个半导体层的第一半导体区域，栅电极， 通过绝缘膜形成，使得栅电极跨越设置在栅电极两侧的半导体层中的半导体层和源极/漏极区，由此沟道区是 形成在所述半导体层的至少两侧，（b），其中所述第二半导体区域包括从所述衬底向上突出的半导体层，并且至少相对于与沟道垂直的方向的两端处的所述第一半导体区域相对 电流方向和面对第一半导体区域的半导体层的侧表面平行于沟道电流方向。

    Semiconductor device
    17.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4643950A

    公开(公告)日：1987-02-17

    申请号：US837005

    申请日：1986-03-06

    申请人： Atsushi Ogura ,  Koji Egami

    发明人： Atsushi Ogura ,  Koji Egami

    IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/318 ,  H01L27/12 ,  B32B9/04

    CPC分类号： H01L21/318 ,  H01L21/2022

    摘要： In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.

    摘要翻译： 在包括基板，形成在基板上的绝缘层和形成在绝缘层上的至少一个有源层的层压半导体器件中，绝缘层包含作为层间绝缘膜的AlN层。

    SOI substrate and method for manufacturing the same
    19.
    发明授权
    SOI substrate and method for manufacturing the same 有权
    SOI衬底及其制造方法

    公开(公告)号：US06548379B1

    公开(公告)日：2003-04-15

    申请号：US09786247

    申请日：2001-05-29

    申请人： Atsushi Ogura

    发明人： Atsushi Ogura

    IPC分类号： H01L2120

    CPC分类号： H01L21/3226 ,  H01L21/26533 ,  H01L21/76243

    摘要： A SOI substrate includes a SiO2 film (230) having a center located at the depth of the damage peak where the crystal damage is maximum after the Si substrate (10) is ion-implanted with oxygen ions. Even if a crystal defect (240) remains at the depth of the density peak where the density is maximum, the crystal defect does not effect the device operation because it is outside the active layer. By using a low-dose SIMOX process, a lower-cost SOI substrate can be obtained wherein crystal defects formed in the active layer are reduced.

    摘要翻译： SOI衬底包括SiO 2膜（230），其中在位于硅衬底（10）被离子注入氧离子之后，晶体损伤最大的损伤峰的深度处的中心位置。 即使晶体缺陷（240）保持在密度最大的密度峰的深度，由于晶体缺陷在有源层外部，所以晶体缺陷不影响器件操作。 通过使用低剂量SIMOX工艺，可以获得在有源层中形成的晶体缺陷减小的成本较低的SOI衬底。

    Silicon-on-insulator (SOI) substrate
    20.
    发明授权
    Silicon-on-insulator (SOI) substrate 有权
    绝缘体上硅（SOI）衬底

    公开(公告)号：US06489654B2

    公开(公告)日：2002-12-03

    申请号：US09518692

    申请日：2000-03-03

    申请人： Atsushi Ogura

    发明人： Atsushi Ogura

    IPC分类号： H01L2972

    CPC分类号： H01L21/7624 ,  H01L21/76254 ,  Y10S257/914

    摘要： There is provided a method of fabricating a silicon-on-insulator substrate, including the steps of (a) forming a silicon substrate at a surface thereof with an oxygen-containing region containing oxygen at such a concentration that oxygen is not precipitated in the oxygen-containing region in later mentioned heat treatment, (b) forming a silicon oxide film at a surface of the silicon substrate, (c) implanting hydrogen ions into the silicon substrate through the silicon oxide film, (d) overlapping the silicon substrate and a support substrate each other so that the silicon oxide film makes contact with the support substrate, and (e) applying heat treatment to the thus overlapped silicon substrate and support substrate to thereby separate the silicon substrate into two pieces at a region into which the hydrogen ions have been implanted, one of the two pieces remaining on the silicon oxide film as a silicon-on-insulator active layer. The support substrate, the silicon oxide film located on the support substrate, and the silicon-on-insulator active layer formed on the silicon oxide film defines a silicon on-insulator structure. The method makes it possible to significantly reduce crystal defect density in the silicon-on-insulator active layer, which ensures that a substrate made in accordance with the method can be used for fabricating electronic devices thereon.

    摘要翻译： 提供了一种制造绝缘体上硅衬底的方法，包括以下步骤：（a）在其表面上形成含有氧的含氧区域的硅衬底，其浓度使氧在氧中不沉淀 （b）在硅衬底的表面形成氧化硅膜，（c）通过氧化硅膜将氢离子注入到硅衬底中，（d）与硅衬底和 支撑基板，使得氧化硅膜与支撑基板接触，（e）对这样重叠的硅基板和支撑基板进行热处理，从而将硅基板分成两部分，其中氢离子 已经植入了作为绝缘体上硅活性层的氧化硅膜上残留的两个之一。 支撑衬底，位于支撑衬底上的氧化硅膜和形成在氧化硅膜上的绝缘体上硅有源层限定了绝缘体上硅结构。 该方法可以显着降低绝缘体上的有源层中的晶体缺陷密度，这确保了根据该方法制造的衬底可用于在其上制造电子器件。