公开(公告)号：US07407853B2

公开(公告)日：2008-08-05

申请号：US11077255

申请日：2005-03-11

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/8242

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。

公开(公告)号：US20080176351A1

公开(公告)日：2008-07-24

申请号：US11843693

申请日：2007-08-23

申请人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

发明人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

IPC分类号： H01L21/00

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04

摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.

摘要翻译： 本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。 在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤 能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤 。 第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。 第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

公开(公告)号：US20070072349A1

公开(公告)日：2007-03-29

申请号：US11509739

申请日：2006-08-25

申请人： Takuo Kaitoh ,  Eiji Oue ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Toshihiko Itoga

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.

摘要翻译： 本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。 显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤， 检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为 当聚集的位置存在于预定区域之外时，产品是良好的。

公开(公告)号：US20080142803A1

公开(公告)日：2008-06-19

申请号：US12000403

申请日：2007-12-12

申请人： Takuo Kaitoh ,  Eiji Oue

发明人： Takuo Kaitoh ,  Eiji Oue

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1222 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/458 ,  H01L29/78696

摘要： With the present invention, it is possible to provide a high quality image display by suppressing such faults as malfunction of a circuit or leakage of a current due to hump caused by the characteristic of a thin film transistor at a channel edge portion.An edge portion 302 of a polysilicon layer 301 functioning as a channel layer is converted into a noncrystalline or fine crystalline area. Because a silicon semiconductor film at the channel edge portion 302 is in the fine crystalline or noncrystalline state, a current flowing there is extremely small, or a current does not flow there. Thus, even when a threshold voltage Vth at a channel central portion is different from that at a channel edge portion, performance of the entire thin film transistor film is little affected, so that display faults due to hump are prevented.

摘要翻译： 通过本发明，可以通过抑制电路的故障或由沟道边缘部分的薄膜晶体管的特性引起的由于隆起引起的电流的泄漏而提供高质量的图像显示。 用作沟道层的多晶硅层301的边缘部分302被转换成非结晶或细晶体区域。 由于沟道边缘部302处的硅半导体膜处于微细或非结晶状态，所以流过的电流极小，或者电流不流过。 因此，即使在通道中心部分的阈值电压Vth与通道边缘部分的阈值电压Vth不同时，薄膜晶体管膜整体的性能也受到很小的影响，从而防止由于突起引起的显示故障。

公开(公告)号：US20080296583A1

公开(公告)日：2008-12-04

申请号：US12185292

申请日：2008-08-04

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： H01L33/00

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.

摘要翻译： 显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分 绝缘膜与一个电极重叠构成另一个电极。 导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。 绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

公开(公告)号：US20050211983A1

公开(公告)日：2005-09-29

申请号：US11077255

申请日：2005-03-11

申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

IPC分类号： G02F1/1343 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。

公开(公告)号：US08610868B2

公开(公告)日：2013-12-17

申请号：US13042490

申请日：2011-03-08

申请人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

发明人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

IPC分类号： G02F1/1345

CPC分类号： G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

摘要翻译： 为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造 和端子内部的控制区域。 图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。 另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。 当感应到静电时，导致端子外部的区域发生介电击穿。 因此，显示区域和控制区域被保护免受静电。

公开(公告)号：US08421940B2

公开(公告)日：2013-04-16

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： G02F1/136

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20120081628A1

公开(公告)日：2012-04-05

申请号：US13252478

申请日：2011-10-04

申请人： Hidekazu NITTA ,  Hidekazu Miyake ,  Takuo Kaitoh

发明人： Hidekazu NITTA ,  Hidekazu Miyake ,  Takuo Kaitoh

IPC分类号： G02F1/136 ,  H01L33/62

CPC分类号： G02F1/1368 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

摘要翻译： 一种液晶显示装置，用于增加像素中的TFT的导通电流，同时抑制其中通过等离子体CVD连续地形成TFT中的半导体层和第一n + -a-Si层的导通电流的变化 。 同时对半导体层和第一n + a-Si层进行图案化。 然后，形成第二n + a-Si层，以覆盖第一n + -a-Si层的上表面和半导体层的侧部。 通过在半导体层上连续地形成第一n + -a-Si层，可以增加导通电流并且可以减小TFT的导通电流的变化。

公开(公告)号：US20100032673A1

公开(公告)日：2010-02-11

申请号：US12534904

申请日：2009-08-04

申请人： Terunori SAITOU ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Terunori SAITOU ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/04

摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

摘要翻译： 液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并且形成在栅电极之上，其间插入有栅极绝缘膜。 源电极或漏电极形成在半导体层的上方。 在源极或漏电极与半导体层之间形成n + Si层。 由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。