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公开(公告)号：US08507130B2
公开(公告)日：2013-08-13
申请号：US12452115
申请日：2008-06-30
申请人： Hiroki Kondo , Tsuyoshi Sasaki , Osamu Hiruta , Yuichi Itou , Chikaaki Okuda , Youji Takeuchi , Yoshio Ukyo
发明人： Hiroki Kondo , Tsuyoshi Sasaki , Osamu Hiruta , Yuichi Itou , Chikaaki Okuda , Youji Takeuchi , Yoshio Ukyo
IPC分类号： H01M10/0563 , H01M10/0561 , H01M10/056 , H01M10/36
CPC分类号： H01M10/36 , H01M4/485 , H01M4/5825 , H01M2300/0002
摘要： The present invention provides a water based lithium secondary battery that can inhibit deteriorations in capacity owing to charge-and-discharge operations and maintain a high capacity even after it is charged and discharged repeatedly. The water based lithium secondary battery includes a positive electrode, a negative electrode, a separator 4 sandwiched between these, and an aqueous electrolyte solution obtained by dissolving an electrolyte made of a lithium salt in a water based solvent. As the water based solvent, a pH buffer solution is employed. The buffer solution is obtained by dissolving an acid and its conjugate base's salt, a base and its conjugate acid's salt, a salt made from a weak acid and a strong base, a salt made from a weak base and a strong acid, or a salt made from a weak acid and a weak base in water.
摘要翻译： 本发明提供一种水性锂二次电池，其可以抑制由于充放电操作而引起的容量恶化，并且即使在重复充电和放电之后也能保持高容量。 水基锂二次电池包括正极，负极，夹在它们之间的隔板4和通过将由锂盐制成的电解质溶解在水性溶剂中而获得的水性电解液。 作为水溶剂，使用pH缓冲溶液。 缓冲溶液是通过将酸及其共轭碱的盐，碱及其共轭酸盐溶解，由弱酸和强碱制成的盐，由弱碱和强酸制成的盐或盐 由弱酸和弱碱在水中制成。
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公开(公告)号：US20100136427A1
公开(公告)日：2010-06-03
申请号：US12452115
申请日：2008-06-30
申请人： Hiroki Kondo , Tsuyoshi Sasaki , Osamu Hiruta , Yuichi Itou , Chikaaki Okuda , Youji Takeuchi , Yoshio Ukyo
发明人： Hiroki Kondo , Tsuyoshi Sasaki , Osamu Hiruta , Yuichi Itou , Chikaaki Okuda , Youji Takeuchi , Yoshio Ukyo
IPC分类号： H01M6/04
CPC分类号： H01M10/36 , H01M4/485 , H01M4/5825 , H01M2300/0002
摘要： The present invention provides a water based lithium secondary battery that can inhibit deteriorations in capacity owing to charge-and-discharge operations and maintain a high capacity even after it is charged and discharged repeatedly. The water based lithium secondary battery includes a positive electrode, a negative electrode, a separator sandwiched between these, and an aqueous electrolyte solution obtained by dissolving an electrolyte made of a lithium salt in a water based solvent. As the water based solvent, a pH buffer solution is employed. The buffer solution is obtained by dissolving an acid and its conjugate base's salt, a base and its conjugate acid's salt, a salt made from a weak acid and a strong base, a salt made from a weak base and a strong acid, or a salt made from a weak acid and a weak base in water.
摘要翻译： 本发明提供一种水性锂二次电池，其可以抑制由于充放电操作而引起的容量恶化，并且即使在重复充电和放电之后也能保持高容量。 水基锂二次电池包括正电极，负电极，夹在它们之间的隔板和通过将由锂盐制成的电解质溶解在水基溶剂中而获得的水性电解液。 作为水溶剂，使用pH缓冲溶液。 缓冲溶液是通过将酸及其共轭碱的盐，碱及其共轭酸盐溶解，由弱酸和强碱制成的盐，由弱碱和强酸制成的盐或盐 由弱酸和弱碱在水中制成。
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13.发明申请Semiconductor device using metal nitride as insulating film and its manufacture method 有权使用金属氮化物作为绝缘膜的半导体器件及其制造方法公开(公告)号：US20090042386A1
公开(公告)日：2009-02-12
申请号：US12232944
申请日：2008-09-26
IPC分类号： H01L21/44
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译： 在半导体衬底上形成第一绝缘膜。 在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。 通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。 导电部件被埋在凹部中。 提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。
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公开(公告)号：US20060145348A1
公开(公告)日：2006-07-06
申请号：US11362872
申请日：2006-02-28
IPC分类号： H01L23/52
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
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公开(公告)号：US06750541B2
公开(公告)日：2004-06-15
申请号：US10127418
申请日：2002-04-23
申请人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
发明人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
IPC分类号： H01L2348
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76855 , H01L21/76858 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern, and connected electrically to the first copper pattern via the cap layer.
摘要翻译： 一种具有包含铜层的多层布线结构的半导体器件，包括形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的第一铜图案，形成在第一铜图案上的帽层和第一绝缘层 由形成在第一铜图案上的部分的物质制成的薄膜比形成在第一绝缘膜上的部分的电阻值小，形成在盖层上的第二绝缘膜和埋在孔中的第二铜图案 或沟槽，其形成在第一铜图案上的第二绝缘膜中，并经由盖层与第一铜图案电连接。
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公开(公告)号：USD454842S1
公开(公告)日：2002-03-26
申请号：US29134430
申请日：2000-12-21
申请人： Norihiro Ohashi , Hiroki Kondo , Takayoshi Endo
设计人： Norihiro Ohashi , Hiroki Kondo , Takayoshi Endo
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公开(公告)号：US20130333938A1
公开(公告)日：2013-12-19
申请号：US13983490
申请日：2012-02-17
申请人： Hiroki Kondo
发明人： Hiroki Kondo
IPC分类号： H05K9/00
摘要： A shielded cable includes: at least one conductor; an insulator with which a surface of the at least one conductor is coated, the insulator having a hardness of 10 or more and 90 or less; and a shield layer disposed on a periphery of the insulator, the shield layer being formed by braiding plated fibers.
摘要翻译： 屏蔽电缆包括：至少一根导体; 绝缘体，其中涂覆有至少一个导体的表面，所述绝缘体具有10以上且90以下的硬度; 以及设置在所述绝缘体的周围的屏蔽层，所述屏蔽层通过编织电镀纤维而形成。
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公开(公告)号：US07042093B2
公开(公告)日：2006-05-09
申请号：US10352149
申请日：2003-01-28
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译： 在半导体衬底上形成第一绝缘膜。 在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。 通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。 导电部件被埋在凹部中。 提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。
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19.发明授权Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element 失效高介电常数的金属氧化物，高介电常数的金属氧化物，栅绝缘膜和半导体元件的制造方法公开(公告)号：US07030000B2
公开(公告)日：2006-04-18
申请号：US10807235
申请日：2004-03-24
申请人： Akira Sakai , Yukio Yasuda , Shigeaki Zaima , Mitsuo Sakashita , Hiroki Kondo , Shinsuke Sakashita
发明人： Akira Sakai , Yukio Yasuda , Shigeaki Zaima , Mitsuo Sakashita , Hiroki Kondo , Shinsuke Sakashita
IPC分类号： H01L21/31 , H01L29/772
CPC分类号： H01L21/3247 , C30B29/16 , C30B33/02 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.
摘要翻译： 给定的金属氧化物膜在衬底上外延生长。 然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜 构成要素。
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20.发明申请Method for fabricating a silicon nanocrystal, silicon nanocrystal, method for fabricating a floating gate type memory capacitor structure, and floating gate type memory capacitor structure 审中-公开硅纳米晶体制造方法，硅纳米晶体，制造浮栅型存储电容器结构的方法以及浮栅型存储电容器结构公开(公告)号：US20050087792A1
公开(公告)日：2005-04-28
申请号：US10925966
申请日：2004-08-26
申请人： Hiroki Kondo , Yukio Yasuda , Shigeaki Zaima , Akira Sakai , Mitsuo Sakashita , Shinya Naito , Masaki Satake
发明人： Hiroki Kondo , Yukio Yasuda , Shigeaki Zaima , Akira Sakai , Mitsuo Sakashita , Shinya Naito , Masaki Satake
IPC分类号： C01B33/027 , C30B1/00 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L29/40114 , H01L29/42332
摘要： A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.
摘要翻译： 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。
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