公开(公告)号：US07030000B2

公开(公告)日：2006-04-18

申请号：US10807235

申请日：2004-03-24

申请人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

发明人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

IPC分类号： H01L21/31 ,  H01L29/772

CPC分类号： H01L21/3247 ,  C30B29/16 ,  C30B33/02 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

摘要翻译： 给定的金属氧化物膜在衬底上外延生长。 然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜 构成要素。

公开(公告)号：US20050087792A1

公开(公告)日：2005-04-28

申请号：US10925966

申请日：2004-08-26

申请人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

发明人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

IPC分类号： C01B33/027 ,  C30B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332

摘要： A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

摘要翻译： 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。

公开(公告)号：US07074676B2

公开(公告)日：2006-07-11

申请号：US10468738

申请日：2002-02-13

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

IPC分类号： H01L21/8247 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42332 ,  Y10S438/962

摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

摘要翻译： 以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极 第三绝缘膜。

公开(公告)号：US20060011916A1

公开(公告)日：2006-01-19

申请号：US11088766

申请日：2005-03-25

申请人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

发明人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694

摘要： A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.

摘要翻译： 用于外延生长的衬底包括含硅衬底，硅 - 锗膜和网状结构。 硅 - 锗膜在含硅衬底上层叠形成。 网状结构与含硅基板和硅锗膜之间的界面相邻配置，由连续延伸的90度位错位错线构成。 使网状结构的90度错位错位线显着延长，而不会间断地断裂成短长度，使得90度位错循环地布置在与界面平行的平面中。 因此，90度位错均匀地存在于平行于界面的平面中。 因此，硅 - 锗膜的晶格中的应变已经被更均匀地松弛。

公开(公告)号：US20050189652A1

公开(公告)日：2005-09-01

申请号：US10925976

申请日：2004-08-26

申请人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

发明人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/28518

摘要： A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

摘要翻译： 制备硅衬底，并在硅衬底上形成钛中间层。 然后，在钛中间层上形成含有化合物的复合元素层，构成预定的硅化物膜，形成多层中间结构体，进行热处理，形成由硅基板的硅元素构成的硅化物膜 和含化合物元素层的复合元素。

公开(公告)号：US20110095683A1

公开(公告)日：2011-04-28

申请号：US12926067

申请日：2010-10-25

申请人： Toshio Yokota ,  Yukio Yasuda ,  Hiroyuki Daido ,  Hiromitsu Kiriyama ,  Hajime Okada ,  Masayuki Suzuki ,  Izuru Daito

发明人： Toshio Yokota ,  Yukio Yasuda ,  Hiroyuki Daido ,  Hiromitsu Kiriyama ,  Hajime Okada ,  Masayuki Suzuki ,  Izuru Daito

IPC分类号： H01J61/36 ,  H01J9/26

CPC分类号： H01J61/368 ,  H01J9/326 ,  H01J61/86

摘要： A high pressure discharge lamp has a sealing portion that is made of glass and a sealing metal piece. In a method of manufacturing the high pressure discharge lamp, the sealing metal piece is irradiated with laser beam whose pulse width is 1×10−9 seconds or less, so as to carry out a surface treatment of the sealing metal piece. The sealing metal piece may have a groove that is 120 to 600 nm in depth and 450 to 1,200 nm in width.

摘要翻译： 高压放电灯具有由玻璃和密封金属片制成的密封部分。 在制造高压放电灯的方法中，用脉冲宽度为1×10-9秒以下的激光束照射密封金属片，以进行密封金属片的表面处理。 密封金属片可以具有深度为120至600nm且宽度为450至1,200nm的凹槽。

公开(公告)号：US20100264820A1

公开(公告)日：2010-10-21

申请号：US12662352

申请日：2010-04-13

申请人： Taku Sumitomo ,  Yukio Yasuda ,  Toshio Yokota

发明人： Taku Sumitomo ,  Yukio Yasuda ,  Toshio Yokota

IPC分类号： H01J61/20 ,  H01J61/00

CPC分类号： H01J65/04 ,  H01J61/025 ,  H01J61/18

摘要： An laser driven light source comprises a bulb that encloses a discharge medium, a laser beam unit for emitting a laser beam, wherein the laser beam is focused in the bulb for generating a discharge, and a beam shield element that is provided in the bulb to shield peripheral devices from the laser beam, which passes through the discharge generated in the bulb.

摘要翻译： 激光驱动光源包括封装放电介质的灯泡，用于发射激光束的激光束单元，其中激光束聚焦在用于产生放电的灯泡中，以及设置在灯泡中的光束屏蔽元件 屏蔽通过在灯泡中产生的放电的激光束的外围设备。

公开(公告)号：US20090183719A1

公开(公告)日：2009-07-23

申请号：US12139110

申请日：2008-06-13

申请人： Futoshi AIDA ,  Yukio Yasuda ,  Yusuke Naruse

发明人： Futoshi AIDA ,  Yukio Yasuda ,  Yusuke Naruse

IPC分类号： F02P3/05

CPC分类号： F02P17/12 ,  F02P2017/125

摘要： An internal combustion engine ignition device is provided in which an ECU (200) includes a pulse generation circuit (201) that outputs pulse signals (Igt1 and Igt2) and an ion-signal detection/control circuit (300), and a coil driver (400) includes a pulse detection circuit (7) that recognizes a signal received from the pulse generation circuit (201) and an ion-current detection circuit (9); when the pulse signals are not outputted, an ion current is detected and a signal is outputted at the same line as a coil-driver input signal line.

摘要翻译： 提供一种内燃机点火装置，其中ECU（200）包括输出脉冲信号（Igt1和Igt2）的脉冲发生电路（201）和离子信号检测/控制电路（300），以及线圈驱动器 400）包括识别从脉冲发生电路（201）接收的信号的脉冲检测电路（7）和离子电流检测电路（9）。 当不输出脉冲信号时，检测离子电流，并且在与线圈驱动器输入信号线相同的线处输出信号。

公开(公告)号：US20090039785A1

公开(公告)日：2009-02-12

申请号：US12222197

申请日：2008-08-05

申请人： Yukio Yasuda ,  Takehito Senga

发明人： Yukio Yasuda ,  Takehito Senga

IPC分类号： H01J17/16

CPC分类号： H01J61/86 ,  H01J61/20 ,  H01J61/36 ,  H01J61/366

摘要： A discharge lamp comprises a discharge container in which a sealing tube is connected to each end of an arc tube, electrodes arranged inside the arc tube, a glass member provided in the sealing tube, a metallic foil provided on an outer circumference face of the glass member, an external lead which is electrically connected to the metallic foil and which is inserted in a through hole of an external quartz tube, a low melting point glass which is formed in a gap between an inner circumference face of the through hole of the external quartz glass tube and an external circumference face of the external lead, wherein a concave portion is formed at an outer end of the through hole.

摘要翻译： 放电灯包括放电容器，其中密封管连接到电弧管的每一端，设置在电弧管内的电极，设置在密封管中的玻璃构件，设置在玻璃的外周面上的金属箔 元件，与金属箔电连接并插入外部石英管的通孔中的外部引线，形成在外部通孔的内周面之间的间隙中的间隙中的低熔点玻璃 石英玻璃管和外部引线的外周面，其中在通孔的外端形成凹部。

公开(公告)号：US06928177B2

公开(公告)日：2005-08-09

申请号：US10257728

申请日：2002-02-21

申请人： Ikuo Chatani ,  Yukio Yasuda

发明人： Ikuo Chatani ,  Yukio Yasuda

IPC分类号： H01T4/08 ,  H04R3/00 ,  H04R25/00

CPC分类号： H01T4/08 ,  H04R3/007

摘要： A loudspeaker protective unit for protecting a loudspeaker device against an excessive input current includes a lamp connected in series with the loudspeaker unit. The lamp is housed in a casing exhibiting light-sealing properties formed of an electrically conductive material, and is sealed with a sealant exhibiting a predetermined electrical conductivity. The spacing between lead lines of the lamp housed in the casing is of a preset value. An inert gas is sealed within a main lamp body unit and a preset voltage is applied to the main lamp body unit. When the voltage is applied across the lead lines, an electrical discharge is produced to interrupt the current flowing through the filament so as to prohibit a temperature rise in the lamp.

摘要翻译： 用于保护扬声器装置免受过大输入电流的扬声器保护单元包括与扬声器单元串联连接的灯。 灯被容纳在显示由导电材料形成的光密封特性的壳体中，并且用表现出预定导电性的密封剂密封。 容纳在壳体中的灯的引线之间的间隔是预设值。 惰性气体被密封在主灯体单元内，并且将预设电压施加到主灯体单元。 当跨导线施加电压时，产生放电以中断流过灯丝的电流，以防止灯中的温度上升。