摘要:
A structure of a cowl and its vicinities is provided which is capable of, even in a vehicle which has an open cowl structure, using the open cowl structure as a member which connects the right and left bodies of the vehicle, and at the same time, realizing a structure that is useful for protecting a pedestrian. At the end part of a cowl 12 in the vehicle rear direction, one end of a dash upper panel 16 is connected; its other end extends below the cowl 12 and in the vehicle front direction; from its middle part in the vehicle front-and-rear directions, a cowl cross-member lower 9 extends in the vehicle upper direction; at the upper-end part of the cowl cross-member lower 9, a protrusion portion 25 is formed; and by welding it to a cowl cross-member upper 10, a closed-section portion 27 is formed between them. Herein, the cowl cross-member upper 10 is thinner than the cowl cross-member lower 9.
摘要:
A pair of sub frames is provided on the outside of a heat exchanger in a vehicle width direction, there is provided a stiffener which interconnects front ends of the sub frames and projects forward, and the stiffener is connected to lower portions of the sub frames. Accordingly, the sufficient attachment rigidity of the stiffener can be secured in the normal state, whereas in the vehicle collision state the stiffener can be easily separated off the sub frames without resisting improperly, so that the safety of pedestrian can be secured.
摘要:
An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.
摘要:
A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要:
A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要:
An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.
摘要:
A system and method are provided for operating a variable aperture (30) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (10). The system and method comprise means or steps for (i) measuring ion beam current at an implanter location using a current detector (35); (ii) comparing the measured ion beam current with a desired ion beam current; (iii) outputting a control signal (126, 128) based on the comparison of the measured ion beam current with the desired ion beam current; and (iv) adjusting a gap (50), through which through ion beam passes and which is defined by opposing first and second aperture plates (44A, 44B), in response to the control signal to control the amount of ion beam current passing therethrough. The current detector (35) provides ion beam current feedback, and a position sensor (116, 118) may be utilized to provide aperture plate (44A, 44B) position feedback. The system and method provide a quick, direct, and precise mechanism for effecting significant changes in ion beam current without requiring re-tuning of the source. The gap (50) of the aperture (44) is adjustable in increments of about 5 microns (&mgr;m).
摘要:
There is disclosed a process of producing a 2-cyano-4-oxo-4H-benzopyran compound of the general formula (2): ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, halogen, hydroxy, C.sub.1 -C.sub.5 alkyl, C.sub.1 -C.sub.5 alkoxy, nitro or a group of the RCONH wherein R is C.sub.1 -C.sub.20 alkyl, phenyl, phenyl-substituted (C.sub.1 -C.sub.20) alkyl, phenyl (C.sub.1 -C.sub.20)alkoxyphenyl or (C.sub.1 -C.sub.20) alkoxyphenyl. This production process is characterized in that a carboxamide of the general formula (1): ##STR2## wherein R.sup.1 and R.sup.2 are each as defined above, is reacted with a dehydrating agent in the presence of a pyridine compound of the general formula (4): ##STR3## wherein A.sup.1 and A.sup.2 are independently hydrogen or C.sub.1 -C.sub.5 alkyl. If the final product cannot be obtained as crystals having good filtration properties by ordinary treatments, a novel technique as disclosed herein can provide such crystals by dissolving the reaction product in an organic solvent insoluble or slightly soluble in water; pouring the resultant solution into water; and removing the organic solvent by distillation with stirring to effect the crystallization of the final product.