Vehicle front-body structure
    11.
    发明申请
    Vehicle front-body structure 有权
    车身前部结构

    公开(公告)号:US20050067859A1

    公开(公告)日:2005-03-31

    申请号:US10929599

    申请日:2004-08-31

    IPC分类号: B60R21/34 B62D25/08 B62D25/10

    CPC分类号: B62D25/081

    摘要: A structure of a cowl and its vicinities is provided which is capable of, even in a vehicle which has an open cowl structure, using the open cowl structure as a member which connects the right and left bodies of the vehicle, and at the same time, realizing a structure that is useful for protecting a pedestrian. At the end part of a cowl 12 in the vehicle rear direction, one end of a dash upper panel 16 is connected; its other end extends below the cowl 12 and in the vehicle front direction; from its middle part in the vehicle front-and-rear directions, a cowl cross-member lower 9 extends in the vehicle upper direction; at the upper-end part of the cowl cross-member lower 9, a protrusion portion 25 is formed; and by welding it to a cowl cross-member upper 10, a closed-section portion 27 is formed between them. Herein, the cowl cross-member upper 10 is thinner than the cowl cross-member lower 9.

    摘要翻译: 提供了一种整流罩及其附近的结构,即使在具有开放式整流罩结构的车辆中,也可以使用开放式整流罩结构作为连接车辆的左右车身的部件,并且同时 ,实现了对保护行人有用的结构。 在整流罩12的车辆后方的端部,连接着前面板16的一端。 其另一端延伸到整流罩12的下方并且在车辆正面方向; 车辆横向构件下部9在车辆前后方向上的中间部分沿车辆上方延伸; 在整流罩横档下部9的上端部形成突起部25, 并且通过将其焊接到前围横梁10上,在它们之间形成有封闭部27。 这里,前围十字架上部10比前罩十字部件下部9薄。

    Front vehicle-body structure of vehicle
    12.
    发明授权
    Front vehicle-body structure of vehicle 有权
    车前车身结构

    公开(公告)号:US08403403B2

    公开(公告)日:2013-03-26

    申请号:US13186751

    申请日:2011-07-20

    IPC分类号: B60J7/00

    摘要: A pair of sub frames is provided on the outside of a heat exchanger in a vehicle width direction, there is provided a stiffener which interconnects front ends of the sub frames and projects forward, and the stiffener is connected to lower portions of the sub frames. Accordingly, the sufficient attachment rigidity of the stiffener can be secured in the normal state, whereas in the vehicle collision state the stiffener can be easily separated off the sub frames without resisting improperly, so that the safety of pedestrian can be secured.

    摘要翻译: 在车辆宽度方向的热交换器的外侧设置有一对副框架,设置有将子框架的前端相互连接并向前突出的加强件,并且加强件与子框架的下部连接。 因此,能够在正常状态下确保加强件的充分的附着刚性,而在车辆碰撞状态下,能够容易地将加强件从副框架上分离而不会不正确地抵抗,能够确保行人的安全性。

    Ion implantation apparatus and ion implantation method
    13.
    发明授权
    Ion implantation apparatus and ion implantation method 有权
    离子注入装置和离子注入方法

    公开(公告)号:US07851772B2

    公开(公告)日:2010-12-14

    申请号:US12100666

    申请日:2008-04-10

    IPC分类号: H01J37/317 H01J37/28 G21K1/08

    摘要: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.

    摘要翻译: 根据本发明的离子注入装置包括作为偏转装置的驻极电极,其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处,用于将预定的离子束偏转 通过电场的操作从光束轨迹线偏离的方向。 当离子束不满足期望条件时,停放电压被施加到驻极电极,由此,离子束通过从光束轨迹线偏转而处于抽真空状态。 结果,离子束不能通过质量分析狭缝,因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

    Wafer charge compensation device and ion implantation system having the same
    14.
    发明授权
    Wafer charge compensation device and ion implantation system having the same 有权
    晶圆电荷补偿装置和具有相同的离子注入系统

    公开(公告)号:US07304319B2

    公开(公告)日:2007-12-04

    申请号:US11151308

    申请日:2005-06-14

    IPC分类号: H01J37/317

    摘要: A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

    摘要翻译: 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时,用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体,并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

    Wafer charge compensation device and ion implantation system having the same
    15.
    发明申请
    Wafer charge compensation device and ion implantation system having the same 有权
    晶圆电荷补偿装置和具有相同的离子注入系统

    公开(公告)号:US20060113492A1

    公开(公告)日:2006-06-01

    申请号:US11151308

    申请日:2005-06-14

    IPC分类号: H01J37/08

    摘要: A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

    摘要翻译: 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时,用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体,并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

    Irradiation system with ion beam
    16.
    发明申请
    Irradiation system with ion beam 有权
    离子束照射系统

    公开(公告)号:US20060113466A1

    公开(公告)日:2006-06-01

    申请号:US11202100

    申请日:2005-08-12

    IPC分类号: B01D59/44

    摘要: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

    摘要翻译: 照射系统包括光束产生源,质量分析装置,光束变换器,用于使光束往复摆动的扫描偏转器,光束并行化装置,加速/减速装置以及能量过滤装置。 根据本发明,提供了产生电场和磁场以弯曲轨迹的混合角能量滤波器作为能量过滤装置。 在混合角能量滤波器的下游侧还设置有一对多表面能量狭缝单元,其具有可根据用于照射的离子种类在其间切换的多个能量狭缝。 在诸如中性粒子,不同种类的掺杂剂,具有不同能量的离子,金属和灰尘颗粒的污染物的量非常小的条件下,可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

    Method and system for operating a variable aperture in an ion implanter
    17.
    发明授权
    Method and system for operating a variable aperture in an ion implanter 有权
    用于在离子注入机中操作可变孔径的方法和系统

    公开(公告)号:US06194734B1

    公开(公告)日:2001-02-27

    申请号:US09253374

    申请日:1999-02-19

    IPC分类号: H01J37317

    摘要: A system and method are provided for operating a variable aperture (30) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (10). The system and method comprise means or steps for (i) measuring ion beam current at an implanter location using a current detector (35); (ii) comparing the measured ion beam current with a desired ion beam current; (iii) outputting a control signal (126, 128) based on the comparison of the measured ion beam current with the desired ion beam current; and (iv) adjusting a gap (50), through which through ion beam passes and which is defined by opposing first and second aperture plates (44A, 44B), in response to the control signal to control the amount of ion beam current passing therethrough. The current detector (35) provides ion beam current feedback, and a position sensor (116, 118) may be utilized to provide aperture plate (44A, 44B) position feedback. The system and method provide a quick, direct, and precise mechanism for effecting significant changes in ion beam current without requiring re-tuning of the source. The gap (50) of the aperture (44) is adjustable in increments of about 5 microns (&mgr;m).

    摘要翻译: 提供了一种用于操作可变孔径(30)以用于调节在离子注入系统(10)中通过其中的离子束电流的量的系统和方法。 该系统和方法包括用于(i)使用电流检测器(35)测量在注入器位置处的离子束电流的装置或步骤; (ii)将所测量的离子束电流与期望的离子束电流进行比较; (iii)基于所测量的离子束电流与期望的离子束电流的比较来输出控制信号(126,128); 和(iv)响应于控制信号调节通过离子束通过并由相对的第一和第二孔板(44A,44B)限定的间隙(50),以控制通过其的离子束电流的量 。 电流检测器(35)提供离子束电流反馈,并且位置传感器(116,118)可用于提供孔板(44A,44B)的位置反馈。 该系统和方法提供快速,直接和精确的机制来实现离子束电流的显着变化,而不需要对源进行重新调谐。 孔(44)的间隙(50)可以约5微米(母体)的增量调节。

    Process of producing 2-cyano-4-oxo-4H-benzopyran compounds
    18.
    发明授权
    Process of producing 2-cyano-4-oxo-4H-benzopyran compounds 失效
    制备2-氰基-4-氧代-4H-苯并吡喃化合物的方法

    公开(公告)号:US5659051A

    公开(公告)日:1997-08-19

    申请号:US273119

    申请日:1994-07-11

    IPC分类号: C07D311/24

    CPC分类号: C07D311/24

    摘要: There is disclosed a process of producing a 2-cyano-4-oxo-4H-benzopyran compound of the general formula (2): ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, halogen, hydroxy, C.sub.1 -C.sub.5 alkyl, C.sub.1 -C.sub.5 alkoxy, nitro or a group of the RCONH wherein R is C.sub.1 -C.sub.20 alkyl, phenyl, phenyl-substituted (C.sub.1 -C.sub.20) alkyl, phenyl (C.sub.1 -C.sub.20)alkoxyphenyl or (C.sub.1 -C.sub.20) alkoxyphenyl. This production process is characterized in that a carboxamide of the general formula (1): ##STR2## wherein R.sup.1 and R.sup.2 are each as defined above, is reacted with a dehydrating agent in the presence of a pyridine compound of the general formula (4): ##STR3## wherein A.sup.1 and A.sup.2 are independently hydrogen or C.sub.1 -C.sub.5 alkyl. If the final product cannot be obtained as crystals having good filtration properties by ordinary treatments, a novel technique as disclosed herein can provide such crystals by dissolving the reaction product in an organic solvent insoluble or slightly soluble in water; pouring the resultant solution into water; and removing the organic solvent by distillation with stirring to effect the crystallization of the final product.

    摘要翻译: 公开了通式(2)的2-氰基-4-氧代-4H-苯并吡喃化合物的制备方法:其中R 1和R 2独立地是氢,卤素,羟基,C 1 -C 5烷基 硝基或其中R为C 1 -C 20烷基,苯基,苯基取代的(C 1 -C 20)烷基,苯基(C 1 -C 20)烷氧基苯基或(C 1 -C 20)烷氧基苯基)的RCONH基团。 该制造方法的特征在于通式(1)的羧酰胺:其中R 1和R 2各自如上所定义,与脱水剂在通式(Ⅴ)的吡啶化合物存在下反应, (4):其中A1和A2独立地为氢或C1-C5烷基。 如果通过常规处理不能获得具有良好过滤性能的结晶的最终产品,则本文公开的新技术可以通过将反应产物溶解在不溶或微溶于水的有机溶剂中来提供这种晶体; 将所得溶液倒入水中; 并在搅拌下通过蒸馏除去有机溶剂以实现最终产物的结晶。