利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

194 条记录 (耗时 0.039 秒)

    Water-retaining support for plants and plant body-growing water-retaining material
    11.
    发明授权
    Water-retaining support for plants and plant body-growing water-retaining material 失效
    植物和植物生长保水材料的保水支撑

    公开(公告)号：US06615539B1

    公开(公告)日：2003-09-09

    申请号：US09831257

    申请日：2001-08-13

    申请人： Yasuhiro Obonai ,  Koji Furukawa ,  Hiroshi Yoshioka ,  Yuichi Mori ,  Kazuhiro Kasuya

    发明人： Yasuhiro Obonai ,  Koji Furukawa ,  Hiroshi Yoshioka ,  Yuichi Mori ,  Kazuhiro Kasuya

    IPC分类号： A01G3100

    CPC分类号： A01G24/00 ,  A01G24/35

    摘要： A water-retaining support for plants comprising a hydrogel-forming polymer (A) having a calcium ion absorption of 0-100 mg per 1 g of the dry weight thereof, having a chlorine ion content of 0.07-7 mmol per 1 g of the dry weight thereof and having a water absorption magnification in ion-exchanger water at 25° C. of 1.0×101 to 1.0×102; or a plant body-growing water-retaining material comprising a molded product of a mixture of such a polymer (A) and a plant body-growing support (B). The water-retaining support for plants and the plant body-growing water-retaining material are those which have an excellent water-retaining property and they substantially do not cause inhibition of root generation or inhibition of root elongation.

    摘要翻译： 一种用于植物的保水性载体，其包含水凝胶形成性聚合物（A），每1g干重具有钙离子吸收值为0-100mg，每1g氯离子含量为0.07-7mmol 其在25℃的离子交换水中的吸水倍率为1.0×101〜1.0×102; 或包含这种聚合物（A）和植物体生长载体（B）的混合物的模制产品的植物体生长保水材料。 用于植物和植物生长保水性材料的保水性支持物是具有优异的保水性的物质，并且它们基本上不会引起根生根抑制或根伸长的抑制。

    Electrophoretic matrix and electrophoresis using same
    13.
    发明授权
    Electrophoretic matrix and electrophoresis using same 失效
    电泳基质和电泳使用相同

    公开(公告)号：US5196099A

    公开(公告)日：1993-03-23

    申请号：US901650

    申请日：1992-06-22

    申请人： Yuichi Mori ,  Masato Mikami ,  Hiroshi Yoshioka

    发明人： Yuichi Mori ,  Masato Mikami ,  Hiroshi Yoshioka

    IPC分类号： G01N27/447

    CPC分类号： G01N27/44747

    摘要： An electrophoretic matrix comprised of at least one water-insolubilized, temperature-responsive polymeric compound having an LCST is disclosed. The electro-phoretic matrix can change its hydrophilic/hydrophobic property by changing temperature. A method of using the electrophoretic matrix involves charging a sample onto the matrix and carrying out electrophoresis at a temperature above or below the LCST of the polymeric compound.

    摘要翻译： 公开了由至少一种具有LCST的不溶于水的温度敏感的聚合物组成的电泳基质。 电泳基质可以通过改变温度来改变其亲水/疏水性质。 使用电泳基质的方法包括将样品装入基质并在高于或低于聚合物化合物的LCST的温度下进行电泳。

    Plant cultivation system and a method for plant cultivation
    14.
    发明授权
    Plant cultivation system and a method for plant cultivation 有权

    公开(公告)号：US11058075B2

    公开(公告)日：2021-07-13

    申请号：US16852055

    申请日：2020-04-17

    申请人： MEBIOL INC.

    发明人： Hiroshi Yoshioka ,  Yuichi Mori ,  Akihiro Okamoto ,  Shigeki Miura ,  Tomoyoshi Mizutani

    IPC分类号： A01G31/02 ,  A01G31/00 ,  A01G25/02

    摘要： Prior art technology has a problem in that when a plant is cultivated for a long period of time on a PVA film having its lower surface positioned in contact with a nutrient fluid, plant roots that have formed penetrate through the film. A plant cultivation system wherein the PVA film has an equilibrium degree of swelling in the range of from 125 to 250% as measured in water at 30° C. and has a loss tangent (tan δ) in the range of from 0.005 to 0.2 as measured in an equilibrium swollen state in water at 30° C., and a method for cultivating a plant by using this plant cultivation system. Plant cultivation can be performed for a long period of time while avoiding infection by bacteria and the like causative of plant diseases. Therefore, the present invention is useful in, e.g., agriculture and the manufacture of pharmaceuticals.

    Plant cultivation system and a method for plant cultivation
    15.
    发明授权
    Plant cultivation system and a method for plant cultivation 有权

    公开(公告)号：US10660280B2

    公开(公告)日：2020-05-26

    申请号：US14913125

    申请日：2014-08-11

    申请人： MEBIOL INC.

    发明人： Hiroshi Yoshioka ,  Yuichi Mori ,  Akihiro Okamoto ,  Shigeki Miura ,  Tomoyoshi Mizutani

    IPC分类号： A01G31/02 ,  A01G31/00 ,  A01G25/02

    摘要： Prior art technology has a problem in that when a plant is cultivated for a long period of time on a PVA film having its lower surface positioned in contact with a nutrient fluid, plant roots that have formed penetrate through the film. A plant cultivation system wherein the PVA film has an equilibrium degree of swelling in the range of from 125 to 250% as measured in water at 30° C. and has a loss tangent (tan δ) in the range of from 0.005 to 0.2 as measured in an equilibrium swollen state in water at 30° C., and a method for cultivating a plant by using this plant cultivation system. Plant cultivation can be performed for a long period of time while avoiding infection by bacteria and the like causative of plant diseases. Therefore, the present invention is useful in, e.g., agriculture and the manufacture of pharmaceuticals.

    Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus
    16.
    发明授权
    Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus 有权
    晶体半导体膜制造方法和结晶半导体膜制造装置

    公开(公告)号：US08716113B2

    公开(公告)日：2014-05-06

    申请号：US13295317

    申请日：2011-11-14

    申请人： Toru Saito ,  Hiroshi Yoshioka ,  Sadayoshi Hotta

    发明人： Toru Saito ,  Hiroshi Yoshioka ,  Sadayoshi Hotta

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02

    CPC分类号： H01L21/02675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

    摘要： A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.

    摘要翻译： 半导体膜制造方法包括：在基板上形成金属层; 通过图案化金属层在每个像素中形成栅电极; 在栅电极上形成栅绝缘体; 在栅极绝缘膜上形成非晶半导体膜; 并且通过用激光束照射非晶半导体膜来结晶非晶半导体膜，并且激光束的激光照射宽度对应于每个像素的宽度的n倍（n为2以上的整数），激光能量强度 在激光照射宽度的一个端部比在另一端部高，并且在结晶中，激光束的激光能量强度以n个像素为增量反转，交替地在激光照射的一个端部之间 激光束的宽度和另一端部。

    ELECTRONIC COMPONENT PACKAGE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PACKAGE MANUFACTURING METHOD
    17.
    发明申请
    ELECTRONIC COMPONENT PACKAGE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PACKAGE MANUFACTURING METHOD 有权
    电子元件封装，电子元件和电子元件封装制造方法

    公开(公告)号：US20140083735A1

    公开(公告)日：2014-03-27

    申请号：US13635024

    申请日：2012-03-16

    申请人： Naoki Kohda ,  Hiroshi Yoshioka

    发明人： Naoki Kohda ,  Hiroshi Yoshioka

    IPC分类号： H05K5/06 ,  H05K13/00

    CPC分类号： H05K5/066 ,  H01L23/055 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/16315 ,  H03H9/1021 ,  H03H9/21 ,  H05K13/00 ,  H01L2924/00

    摘要： An electronic component package has a first sealing member main surface with mounted electronic element, and a second sealing member. An outer circumference portion of a second sealing member is molded into a tapered shape, providing a tapered area in at least part of the outer circumference. A flat area adjacent to the tapered area is provided in at least part of a flat portion inward of the outer circumference portion of the surface of the second sealing member. A first area corresponding to the tapered area and a second area corresponding to the flat area are provided adjacent to each other on a first main surface of the first sealing member with mounted electronic component element. A width W2 of the second area is 0.66 to 1.2 times a width W4 of the flat area. First and second bonding layers are formed and bonded with each other by heating.

    摘要翻译： 电子部件封装具有安装有电子元件的第一密封构件主表面和第二密封构件。 第二密封构件的外周部分模制成锥形，在外周的至少一部分中提供锥形区域。 与第二密封构件的表面的外周部的内侧的平坦部的至少一部分设置有与锥形区域相邻的平坦区域。 相对于锥形区域的第一区域和对应于平坦区域的第二区域在具有安装的电子元件的第一密封构件的第一主表面上彼此相邻地设置。 第二区域的宽度W2为平坦区域的宽度W4的0.66〜1.2倍。 通过加热形成第一和第二接合层并彼此接合。

    Process for forming resist pattern, and resist coating and developing apparatus
    20.
    发明授权
    Process for forming resist pattern, and resist coating and developing apparatus 有权
    用于形成抗蚀剂图案的方法，以及抗蚀涂层和显影装置

    公开(公告)号：US07527442B2

    公开(公告)日：2009-05-05

    申请号：US11872055

    申请日：2007-10-15

    申请人： Hiroshi Yoshioka

    发明人： Hiroshi Yoshioka

    IPC分类号： G03D5/00 ,  G03C5/00 ,  H01L21/00

    CPC分类号： G03F7/70933 ,  G03F7/38 ,  G03F7/40

    摘要： A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.

    摘要翻译： 根据本发明的形成抗蚀剂图案的方法是形成抗蚀剂图案的方法，其中将光致抗蚀剂涂覆在第一基底上，将涂覆的光致抗蚀剂暴露于预定图案的光，然后进行显影 涂布，曝光和显影的过程中的至少一个，无论第一底材所属的地点何处，改变了批次中存在的气氛。