Abstract:
An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
Abstract:
A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.
Abstract:
A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.
Abstract:
A method for manufacturing a semiconductor integrated device includes steps of forming an integrated circuit element on a semiconductor substrate, forming internal wiring, forming a groove along a scribe line on a back surface of the semiconductor substrate to expose a portion of the internal wiring, forming a metal film covering at least the groove, patterning the metal film to form external wiring and removing the metal film at a bottom portion of the groove, forming a protection film covering the external wiring and the bottom portion of the groove, and separating the semiconductor substrate along the scribe line.
Abstract:
An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
Abstract:
A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
Abstract:
A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
Abstract:
A plurality of channel separting regions are formed on a substrate with a space therebetween to segment an channel region. A first insulating layer is formed on the substrate, and a polycrystalline silicon layer is formed thereon and is then subject to patterning so as to provide a plurality of first transfer electrodes in the direction crossing the channel separating region. A second insulating layer is formed on the first transfer electrode and on the substrate having been exposed by the patterning, and a second transfer electrodes are formed at a position between the first transfer electrodes on the second insulating layer. By setting the thickness of each transfer electrodes and the each insulating layer to a predetermined value, the interference of the visible light is controlled, and the transparency rate of the visible light is improved. Further, by increasing the thickness of the transfer electrode at regions other than the light-receiving region, the contact with the electrode is improved, and the operation at regions other than the light-receiving region is improved.