SYSTEM AND METHOD FOR PROVIDING ASYNCHRONOUS DATA COMMUNICATION IN A NETWORKED ENVIRONMENT
    11.
    发明申请
    SYSTEM AND METHOD FOR PROVIDING ASYNCHRONOUS DATA COMMUNICATION IN A NETWORKED ENVIRONMENT 审中-公开
    在网络环境中提供异步数据通信的系统和方法

    公开(公告)号:US20110307631A1

    公开(公告)日:2011-12-15

    申请号:US13155717

    申请日:2011-06-08

    IPC分类号: G06F15/16

    摘要: A method and system for providing asynchronous data communication between a plurality of devices in a networked environment is disclosed. A user using a first device views view media content received from a first content provider of a plurality of service providers. At a request of the user, a message including a data link to the media content is generated and asynchronously sent to a second device via a network. The data link contained in the received message on the second device is used to retrieve the media content from a second content provider. Various action commands contained in the message are used to control the operation of the media content on the second device.

    摘要翻译: 公开了一种用于在网络环境中的多个设备之间提供异步数据通信的方法和系统。 使用第一设备的用户观看从多个服务提供商的第一内容提供商接收的媒体内容。 在用户的请求下,生成包括到媒体内容的数据链接的消息,并通过网络异步地发送到第二设备。 包含在第二设备上的接收到的消息中的数据链接用于从第二内容提供商检索媒体内容。 包含在消息中的各种动作命令用于控制第二设备上的媒体内容的操作。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    12.
    发明授权
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US07824826B2

    公开(公告)日:2010-11-02

    申请号:US11783261

    申请日:2007-04-06

    摘要: A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。 该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。 互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。

    Method of performing multiple stage model calibration for optical imaging simulation models
    13.
    发明授权
    Method of performing multiple stage model calibration for optical imaging simulation models 有权
    对光学成像模拟模型进行多级模型校准的方法

    公开(公告)号:US07433791B2

    公开(公告)日:2008-10-07

    申请号:US11708137

    申请日:2007-02-20

    IPC分类号: G01D18/00 G01B9/00

    CPC分类号: G03F7/705

    摘要: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

    摘要翻译: 校准光刻工艺的仿真模型的方法。 该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程,其中调整模型参数和对准参数,使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程,其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    15.
    发明申请
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US20080020296A1

    公开(公告)日:2008-01-24

    申请号:US11783261

    申请日:2007-04-06

    IPC分类号: G03C5/00 G03F1/00

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
    16.
    发明授权
    Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
    执行抗蚀剂工艺校准/优化和DOE优化的方法,以提供不同光刻系统之间的OPE匹配

    公开(公告)号:US07116411B2

    公开(公告)日:2006-10-03

    申请号:US10926400

    申请日:2004-08-26

    IPC分类号: G01B9/00 G03B27/32 G03C5/00

    摘要: A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.

    摘要翻译: 一种优化用于多个光刻系统的工艺的方法。 该方法包括以下步骤:(a)使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; (b)选择待利用的第二光刻系统,以利用所述给定的处理对所述目标图案进行成像,所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件,所述多个衍射光学元件中的每一个具有对应的变量 用于优化给定衍射光学元件的性能的参数; (c)选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件,校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及(d)通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能,所述遗传算法识别所述多​​个衍射光学元件中所选择的一个的参数的值,其优化所述目标图案的成像 。

    Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems

    公开(公告)号:US20060044542A1

    公开(公告)日:2006-03-02

    申请号:US10926400

    申请日:2004-08-26

    IPC分类号: G03B27/72

    摘要: A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.

    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL)
    19.
    发明申请
    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
    用于执行暗场双偶极平版印刷术(DDL)的方法和装置

    公开(公告)号:US20110014552A1

    公开(公告)日:2011-01-20

    申请号:US12890494

    申请日:2010-09-24

    IPC分类号: G03F1/00

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology
    20.
    发明授权
    Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology 失效
    使用接口映射技术生成用于放置散射条特征的OPC规则的方法和装置

    公开(公告)号:US07614034B2

    公开(公告)日:2009-11-03

    申请号:US11594248

    申请日:2006-11-08

    IPC分类号: G06F17/50 G03F1/00

    CPC分类号: G03F1/36

    摘要: A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

    摘要翻译: 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤:定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则,其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。