Vanilloid receptor ligands and their use in treatments
    18.
    发明申请
    Vanilloid receptor ligands and their use in treatments 失效
    香草素受体配体及其在治疗中的应用

    公开(公告)号:US20050182067A1

    公开(公告)日:2005-08-18

    申请号:US11056534

    申请日:2005-02-11

    摘要: Compounds having the general structure and compositions containing them, for the treatment of acute, inflammatory and neuropathic pain, dental pain, general headache, migraine, cluster headache, mixed-vascular and non-vascular syndromes, tension headache, general inflammation, arthritis, rheumatic diseases, osteoarthritis, inflammatory bowel disorders, inflammatory eye disorders, inflammatory or unstable bladder disorders, psoriasis, skin complaints with inflammatory components, chronic inflammatory conditions, inflammatory pain and associated hyperalgesia and allodynia, neuropathic pain and associated hyperalgesia and allodynia, diabetic neuropathy pain, causalgia, sympathetically maintained pain, deafferentation syndromes, asthma, epithelial tissue damage or dysfunction, herpes simplex, disturbances of visceral motility at respiratory, genitourinary, gastrointestinal or vascular regions, wounds, burns, allergic skin reactions, pruritis, vitiligo, general gastrointestinal disorders, gastric ulceration, duodenal ulcers, diarrhea, gastric lesions induced by necrotising agents, hair growth, vasomotor or allergic rhinitis, bronchial disorders or bladder disorders.

    摘要翻译: 具有一般结构和含有它们的组合物的化合物,用于治疗急性,炎性和神经性疼痛,牙痛,一般头痛,偏头痛,丛集性头痛,混合血管和非血管综合征,紧张性头痛,一般炎症,关节炎,风湿性 疾病,骨关节炎,炎症性肠病,炎症性眼病,炎症性或不稳定性膀胱病,银屑病,皮肤炎症成分炎症,慢性炎性病症,炎性疼痛及相关的痛觉过敏和异常性疼痛,神经性疼痛及相关的痛觉过敏和异常性疼痛,糖尿病性神经病疼痛, 咳嗽痛,交感神经痛,交感综合征,哮喘,上皮组织损伤或功能障碍,单纯疱疹,呼吸道内脏运动紊乱,泌尿生殖道,胃肠道或血管区,伤口,烧伤,过敏性皮肤反应,瘙痒症,白癜风,一般胃肠道疾病, G 腹部溃疡,十二指肠溃疡,腹泻,坏死因子诱发的胃损伤,毛发生长,血管舒缩或过敏性鼻炎,支气管疾病或膀胱疾病。

    Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity
    20.
    发明授权
    Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity 有权
    用于形成具有增强的膜厚度均匀性的微电子层的等离子体增强化学气相沉积(PECVD)方法

    公开(公告)号:US06281146B1

    公开(公告)日:2001-08-28

    申请号:US09396517

    申请日:1999-09-15

    IPC分类号: H01L2131

    摘要: A method for forming a microelectronic layer. There is first provided a substrate. There is then formed over the substrate the microelectronic layer while employing a plasma enhanced chemical vapor deposition (PECVD) method employing a source material gas and a carrier gas, wherein there is employed a sufficiently low plasma power, a sufficiently low source material gas:carrier gas flow rate ratio and a sufficiently high carrier gas atomic mass such that the microelectronic layer is formed with enhanced film thickness uniformity. The method may be employed for forming ion implant screen layers, such as silicon oxide ion implant screen layers, with enhanced film thickness uniformity.

    摘要翻译: 一种形成微电子层的方法。 首先提供基板。 然后在采用使用源材料气体和载气的等离子体增强化学气相沉积(PECVD)方法的基板上形成微电子层,其中采用足够低的等离子体功率,足够低的源材料气体:载体 气体流量比和足够高的载气原子质量,使得微电子层形成为具有增强的膜厚均匀性。 该方法可用于形成具有增强的膜厚度均匀性的离子注入屏幕层,例如氧化硅离子注入屏幕层。