-
公开(公告)号:US20200173040A1
公开(公告)日:2020-06-04
申请号:US16205903
申请日:2018-11-30
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Kuo-Hsin LIN , Li-Duan TSAI , Yu-Ming LIN , Wen-Hsuan CHAO , Chiu-Ping HUANG , Pin-Hsin YANG , Hsiao-Chun HUANG , Jiunn-Nan LIN
Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M′aM″bN2 or M′cM″dCe, wherein M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M″ is Nb, Ta, or a combination thereof, 0.7≤a≤1.7, 0.3≤b≤1.3, a+b=2, 0.24≤c≤1.7, 0.3≤d≤1.76, and 0.38≤e≤3.61, wherein M′aM″bN2 is a cubic crystal system and M′cM″d Ce is a cubic crystal system or amorphous.
-
公开(公告)号:US20170186556A1
公开(公告)日:2017-06-29
申请号:US15388465
申请日:2016-12-22
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Yi-Chang DU , Li-Duan TSAI , Kan-Hsuan LIN
CPC classification number: H01G9/15 , C08K3/22 , C08K2003/2227 , C08K2003/2296 , C08K2201/001 , C08K2201/003 , C08K2201/011 , H01G9/02 , H01G9/025 , H01G9/042 , H01G9/055 , H01G9/07 , C08L39/06
Abstract: A capacitor structure is provided, which includes a positive electrode, a dielectric layer on the positive electrode, and an organic-inorganic composite layer on the dielectric layer. The capacitor structure also includes a negative electrode, and a conductive conjugated polymer electrolyte disposed between the organic-inorganic composite layer and the negative electrode.
-
公开(公告)号:US20220127219A1
公开(公告)日:2022-04-28
申请号:US17131356
申请日:2020-12-22
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Che-Wei PAN , Chiu-Tung WANG , Li-Duan TSAI
Abstract: An electrolyte is provided, which includes organic solvent; and (1) a compound and an ammonium salt thereof, (2) a diacid and an ammonium salt thereof, or (3) a combination thereof. The compound has a chemical structure of wherein R1 is C1-8 alkyl group, C alkenyl group, C1-8 alkynyl group, or aromatic group; and R2 is —(CnH2n)—OH, and n is an integer from 2 to 8. The diacid has a chemical structure of wherein R3 is C1-8 alkyl group, C1-8 alkenyl group, C1-8 alkynyl group, or aromatic group.
-
公开(公告)号:US20200173043A1
公开(公告)日:2020-06-04
申请号:US16205349
申请日:2018-11-30
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Kuo-Hsin LIN , Li-Duan TSAI , Wen-Hsuan CHAO , Chiu-Ping HUANG , Pin-Hsin YANG , Hsiao-Chun HUANG , Jiunn-Nan LIN , Yu-Ming LIN
Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0
-
公开(公告)号:US20200173042A1
公开(公告)日:2020-06-04
申请号:US16204905
申请日:2018-11-29
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Kuo-Hsin LIN , Li-Duan TSAI , Wen-Hsuan CHAO , Yu-Ming LIN , Pin-Hsin YANG , Hsiao-Chun HUANG , Chiu-Ping HUANG , Jiunn-Nan LIN
Abstract: A method for manufacturing catalyst material is provided, which includes putting an M′ target and an M″ target into a nitrogen-containing atmosphere, in which M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof. Powers are provided to the M′ target and the M″ target, respectively. Providing ions to bombard the M′ target and the M″ target to sputtering deposit M′aM″bN2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2, wherein M′aM″bN2 is a cubic crystal system.
-
公开(公告)号:US20190176085A1
公开(公告)日:2019-06-13
申请号:US15854375
申请日:2017-12-26
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Ta-Ching HSIAO , Chu-Pi JENG , Kuo-Lun HUANG , Mu-Hsi SUNG , Keng-Yang CHEN , Li-Duan TSAI
IPC: B01D53/46 , C01B35/02 , C01B32/984
Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
-
公开(公告)号:US20170186555A1
公开(公告)日:2017-06-29
申请号:US15350850
申请日:2016-11-14
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Yi-Chang DU , Li-Duan TSAI
CPC classification number: H01G9/15 , H01G9/0036 , H01G9/025 , H01G9/032 , H01G9/045 , H01G9/07 , H01G2009/05
Abstract: A conductive composite is provided, which includes a conductive conjugated polymer and a mixture. The mixture includes (a) boron oxide, and (b) sulfur-containing compound, nitrogen-containing compound, or a combination thereof. A capacitor is also provided, which includes an anode electrode, a dielectric layer on the anode electrode, a cathode electrode, and an electrolyte between the dielectric layer and the cathode electrode, wherein the electrolyte includes the described conductive composite.
-
-
-
-
-
-