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    Die interconnect structures and methods
    11.
    发明授权
    Die interconnect structures and methods 有权

    公开(公告)号：US10892225B2

    公开(公告)日：2021-01-12

    申请号：US16336582

    申请日：2016-09-29

    Applicant: Intel Corporation

    Inventor： Zhiguo Qian ,  Kemal Aygun

    IPC: H01L23/538 ,  H01L23/00 ,  H01L23/528 ,  H01L23/522

    Abstract: Generally discussed herein are systems, devices, and methods to reduce crosstalk interference. An interconnect structure can include a first metal layer, a second metal layer, a third metal layer, the first metal layer closer to the first and second dies than the second and third metal layers, the first metal layer including a ground plane within a footprint of a bump field of the interconnect structure and signal traces outside the footprint of the bump field.

    SEMICONDUCTOR PACKAGE WITH THROUGH BRIDGE DIE CONNECTIONS
    13.
    发明申请
    SEMICONDUCTOR PACKAGE WITH THROUGH BRIDGE DIE CONNECTIONS 审中-公开

    公开(公告)号：US20200243448A1

    公开(公告)日：2020-07-30

    申请号：US15774306

    申请日：2015-12-22

    Applicant: INTEL CORPORATION

    Inventor： Zhiguo Qian ,  Jianyong Xie ,  Kemal Aygun

    IPC: H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

    Abstract: Semiconductor packages with through bridge die connections and a method of manufacture therefor is disclosed. The semiconductor packages may house one or more electronic components as a system in a package (SiP) implementation. A bridge die, such as an embedded multi-die interconnect bridge (EMIB), may be embedded within one or more build-up layers of the semiconductor package. The bridge die may have an electrically conductive bulk that may be electrically connected on a backside to a power plane and used to deliver power to one or more dies attached to the semiconductor package via interconnects formed on a topside of the bridge die that are electrically connected to the bulk of the bridge die. A more direct path for power delivery through the bridge die may be achieved compared to routing power around the bridge die.

    SLOW WAVE STRUCTURE FOR MILLIMETER WAVE ANTENNAS
    16.
    发明申请
    SLOW WAVE STRUCTURE FOR MILLIMETER WAVE ANTENNAS 审中-公开

    公开(公告)号：US20200014122A1

    公开(公告)日：2020-01-09

    申请号：US16493520

    申请日：2017-03-30

    Applicant: Intel Corporation

    Inventor： Zhichao Zhang ,  Jiwei Sun ,  Kemal Aygun

    IPC: H01Q21/24 ,  H05K1/02

    Abstract: Length matching and phase matching between circuit paths of differing lengths is disclosed. Two signals are specified to arrive at respective path destinations at a predetermined time and with a predetermined phase. An IC provides a first electronic signal over a first conductive path to a first destination and a second electronic signal over a second conductive path to a second destination. A first slow wave structure comprises the first conductive path and a second slow wave structure comprises the second conductive path. The effective relative permittivity of the first slow wave structure is tuned such that the first electronic signal arrives at its destination at a first time and at a first phase, and the effective relative permittivity of the second slow wave structure is tuned such that the second electronic signal arrives at its destination at a second time and at a second phase.

    Microprocessor package with first level die bump ground webbing structure
    17.
    发明授权
    Microprocessor package with first level die bump ground webbing structure 有权

    公开(公告)号：US10453795B2

    公开(公告)日：2019-10-22

    申请号：US15773896

    申请日：2015-12-26

    Applicant: Intel Corporation

    Inventor： Yu Amos Zhang ,  Mathew J. Manusharow ,  Kemal Aygun ,  Mohiuddin Mazumder

    IPC: H01L23/50 ,  H01R13/6471 ,  H05K1/02 ,  H01L23/528 ,  H01L23/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/66

    Abstract: A ground isolation webbing structure package includes a top level with an upper interconnect layer having upper ground contacts, upper data signal contacts, and a conductive material upper ground webbing structure that is connected to the upper ground contacts and surrounds the upper data signal contacts. The upper contacts may be formed over and connected to via contacts or traces of a lower layer of the same interconnect level. The via contacts of the lower layer may be connected to upper contacts of a second interconnect level which may also have such webbing. There may also be at least a third interconnect level having such webbing. The webbing structure electrically isolates and reduces cross talk between the signal contacts, thus providing higher frequency and more accurate data signal transfer between devices such as integrated circuit (IC) chips attached to a package.

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