Abstract:
Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.
Abstract:
Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.
Abstract:
Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.
Abstract:
Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.
Abstract:
Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.