Low-E Panels and Methods of Forming the Same
    2.
    发明申请
    Low-E Panels and Methods of Forming the Same 审中-公开
    低E面板及其形成方法

    公开(公告)号:US20160122235A1

    公开(公告)日:2016-05-05

    申请号:US14531643

    申请日:2014-11-03

    Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A first dielectric layer is formed above the transparent substrate. The first dielectric layer includes zinc, tin, and aluminum. A first reflective layer is formed above the first dielectric layer. A second dielectric layer is formed above the first reflective layer. The second dielectric layer includes zinc, tin, and aluminum. A second reflective layer is formed above the second dielectric layer.

    Abstract translation: 本文提供的实施例描述了用于形成低e板的低e板和方法。 提供透明基板。 在透明基板的上方形成第一电介质层。 第一介电层包括锌,锡和铝。 第一反射层形成在第一介电层的上方。 在第一反射层上方形成第二电介质层。 第二电介质层包括锌,锡和铝。 第二反射层形成在第二介电层的上方。

    Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride
    3.
    发明申请
    Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride 有权
    锡锡酸盐欧姆接触P型氮化镓

    公开(公告)号:US20150311397A1

    公开(公告)日:2015-10-29

    申请号:US14259387

    申请日:2014-04-23

    Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

    Abstract translation: 由锡酸锡(例如ZnSnO 3)制造对p-GaN和其它高功函数(≥4.2eV)的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn:Sn比,以优化特定半导体和感兴趣的波长的带隙,功函数,电导率和透明度。 可以通过使锡酸锌结晶,通过掺入高达5重量%的Al或In或两者来改善电导率。

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