公开(公告)号：US20140182665A1

公开(公告)日：2014-07-03

申请号：US13727986

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0324 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: Optical absorbers, solar cells comprising the optical absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a layer comprising a semiconductor having a bandgap of between about 1.0 eV and about 1.6 eV on a substrate. The thickness of the layer is from about 1 to about 10 microns. The semiconductor comprises Fe, at least one Group IVA element, and at least one Group VIA element. The Group VIA element can be S, Se or Te. The Group IVA element can be Si or Ge. Typical compositions are Fe2(Si,Ge)(S,Se)4. The bandgap can be graded through the thickness of the absorber. High Productivity Combinatorial methods can be used to optimize the composition and grading.

Abstract translation: 公开了光吸收剂，包括光吸收剂的太阳能电池，以及用于制造吸收体的方法。 光吸收剂包括在衬底上具有介于约1.0eV至约1.6eV之间的带隙的半导体的层。 该层的厚度为约1至约10微米。 半导体包括Fe，至少一种IVA族元素和至少一种VIA族元素。 集团VIA元素可以是S，Se或Te。 IVA族元素可以是Si或Ge。 典型的组成是Fe2（Si，Ge）（S，Se）4。 带隙可以通过吸收体的厚度分级。 高效率组合方法可用于优化组成和分级。

公开(公告)号：US20140158190A1

公开(公告)日：2014-06-12

申请号：US14180120

申请日：2014-02-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/065 ,  H01L31/032

CPC classification number: H01L31/065 ,  H01L21/02472 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了用于形成Cu-In-Ga层的方法，然后进行部分或全部硒化。 这导致在后界面处的较高的Ga浓度。 然后将衬底暴露于铝CVD前体，同时衬底仍然在硒化设备中以沉积薄的Al层。 然后将衬底暴露于Se源以完全转换吸收层。 这导致吸收器前面的较高的Al浓度。

公开(公告)号：US20140080250A1

公开(公告)日：2014-03-20

申请号：US13727845

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Jessica Eid ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02551 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

Abstract translation: 公开了一种用于制造高效CIGS太阳能电池的方法，包括在基板上沉积多组分金属前体膜。 然后将基底插入适于将前体暴露于硫属元素的系统中以形成硫族化物TFPV吸收剂。 一种或多种Na前体用于在系统中的前体膜上沉积含Na层。 该方法消除了将Na引入TFPV吸收器的专用设备和方法的使用。

公开(公告)号：US08852993B2

公开(公告)日：2014-10-07

申请号：US14187029

申请日：2014-02-21

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

公开(公告)号：US20140273311A1

公开(公告)日：2014-09-18

申请号：US14105797

申请日：2013-12-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

IPC: H01L33/30 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

公开(公告)号：US20140264320A1

公开(公告)日：2014-09-18

申请号：US14134678

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Jeroen Van Duren

IPC: H01L27/12

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

Abstract translation: 作为穿过该层的深度的函数，引入金属基半导体层的至少一个元素的组成的梯度。 梯度影响器件在不同栅极电压下的电流密度响应。 在一些实施例中，元件（例如Ga）的组成在金属基半导体层和源极/漏极层之间的界面处较大。 梯度轮廓的形状是直线，阶梯，抛物线，指数等之一。

公开(公告)号：US20140170802A1

公开(公告)日：2014-06-19

申请号：US14187029

申请日：2014-02-21

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

Abstract translation: 在CIGS吸收层的光接收表面上形成含镓合金，并且随后的硒化或退火工艺在CIGS吸收层的光接收表面处转化为富镓区域 。 在硒化期间，在CIGS吸收体层的背面接触表面形成第二富含镓区域，使得CIGS吸收层具有双重梯度的镓浓度，朝向光接收表面朝向接收面的后接触面增加 CIGS吸收层。 双分级镓浓度有利地产生CIGS吸收层的双梯度带隙分布。

公开(公告)号：US09178097B2

公开(公告)日：2015-11-03

申请号：US14180120

申请日：2014-02-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L31/065 ,  H01L31/032 ,  H01L31/0749 ,  H01L21/02

CPC classification number: H01L31/065 ,  H01L21/02472 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了用于形成Cu-In-Ga层的方法，然后进行部分或全部硒化。 这导致在后界面处的较高的Ga浓度。 然后将衬底暴露于铝CVD前体，同时衬底仍然在硒化设备中以沉积薄的Al层。 然后将衬底暴露于Se源以完全转换吸收层。 这导致吸收器前面的较高的Al浓度。

公开(公告)号：US08916411B1

公开(公告)日：2014-12-23

申请号：US14477392

申请日：2014-09-04

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

Abstract translation: 在CIGS吸收层的光接收表面上形成含镓合金，并且随后的硒化或退火工艺在CIGS吸收层的光接收表面处转化为富镓区域 。 在硒化期间，在CIGS吸收体层的背面接触表面形成第二富含镓区域，使得CIGS吸收层具有双重梯度的镓浓度，朝向光接收表面朝向接收面的后接触面增加 CIGS吸收层。 双分级镓浓度有利地产生CIGS吸收层的双梯度带隙分布。

公开(公告)号：US20140370646A1

公开(公告)日：2014-12-18

申请号：US14477392

申请日：2014-09-04

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

Abstract translation: 在CIGS吸收层的光接收表面上形成含镓合金，并且随后的硒化或退火工艺在CIGS吸收层的光接收表面处转化为富镓区域 。 在硒化期间，在CIGS吸收体层的背面接触表面形成第二富含镓区域，使得CIGS吸收层具有双重梯度的镓浓度，朝向光接收表面朝向接收面的后接触面增加 CIGS吸收层。 双分级镓浓度有利地产生CIGS吸收层的双梯度带隙分布。