Seed layer for low-e applications
    11.
    发明申请
    Seed layer for low-e applications 有权
    种子层用于低e应用

    公开(公告)号:US20150345005A1

    公开(公告)日:2015-12-03

    申请号:US14293126

    申请日:2014-06-02

    Abstract: Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.

    Abstract translation: 公开了由方法制造的方法和涂层板,以在热处理之前和之后形成多个涂层(例如,一个或多个红外反射层),具有最小的颜色变化。 例如,通过在IR反射层和基底氧化物层之间添加合适的种子层,可以保持颜色性能,而与高温处理无关。 光学填料层可以包括金属氧化物层。 在一些实施方案中,种子层可以包括镍,钛和铌,形成镍钛铌合金,例如NiTiNb。

    Zinc stannate ohmic contacts for p-type gallium nitride
    17.
    发明授权
    Zinc stannate ohmic contacts for p-type gallium nitride 有权
    用于p型氮化镓的锡酸锡欧姆接触

    公开(公告)号:US09246062B2

    公开(公告)日:2016-01-26

    申请号:US14259387

    申请日:2014-04-23

    Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

    Abstract translation: 由锡酸锡(例如ZnSnO 3)制造对p-GaN和其它高功函数(≥4.2eV)的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn:Sn比,以优化特定半导体和感兴趣的波长的带隙,功函数,电导率和透明度。 可以通过使锡酸锌结晶,通过掺入高达5重量%的Al或In或两者来改善电导率。

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