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公开(公告)号：US11211542B2
公开(公告)日：2021-12-28
申请号：US16687722
申请日：2019-11-19
IPC分类号： H01L39/18 , H01L35/04 , H01L27/18 , H01L25/18 , H01L23/34 , H01L39/24 , H01L39/12 , H01L35/20 , H01L35/22
摘要： An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.
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公开(公告)号：US11177427B2
公开(公告)日：2021-11-16
申请号：US16791436
申请日：2020-02-14
摘要： According to an embodiment of the present invention, a method for fabricating a Majorana fermion structure includes providing a substrate, and depositing a superconducting material on the substrate. The method includes depositing a magnetic material on the superconducting material using angled deposition through a mask. The method includes annealing the magnetic material and the superconducting material to form a magnetic nanowire partially embedded in the superconducting material such that the magnetic nanowire and the superconducting material form a Majorana fermion structure.
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公开(公告)号：US20210305137A1
公开(公告)日：2021-09-30
申请号：US16830197
申请日：2020-03-25
发明人： Frank Robert Libsch , Stephen W. Bedell , Ning Li
IPC分类号： H01L23/495 , H01L23/31 , H01L25/00 , H01L23/00
摘要： An energy storage device for an integrated circuit carrier package. One or more energy storage elements have contact elements arranged thereon that include an anode, a cathode, and an isolated common pad. The energy storage element is configured for arrangement in a stack of energy storage elements in which the isolated common pad is shorted to one of the anode or the cathode by bonded conductive interconnects.
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14.发明授权公开(公告)号：US11107966B2
公开(公告)日：2021-08-31
申请号：US16680117
申请日：2019-11-11
发明人： Steven J. Holmes , Stephen W. Bedell , Sean Hart , Devendra K. Sadana , Ning Li , Patryk Gumann
摘要： A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of a first surface of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. The sensing region and a portion of the device region of the superconductor layer are exposed. A sensing region contact is formed by coupling the first surface of the semiconductor layer with a first metal layer. A nanorod contact using the first metal within the portion of the device region outside the sensing region is formed. By depositing a second metal layer on a second surface of the semiconductor layer within the sensing region, a tunnel junction gate is formed.
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公开(公告)号：US20210257536A1
公开(公告)日：2021-08-19
申请号：US16791436
申请日：2020-02-14
摘要： According to an embodiment of the present invention, a method for fabricating a Majorana fermion structure includes providing a substrate, and depositing a superconducting material on the substrate. The method includes depositing a magnetic material on the superconducting material using angled deposition through a mask. The method includes annealing the magnetic material and the superconducting material to form a magnetic nanowire partially embedded in the superconducting material such that the magnetic nanowire and the superconducting material form a Majorana fermion structure.
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公开(公告)号：US20210143325A1
公开(公告)日：2021-05-13
申请号：US16682647
申请日：2019-11-13
摘要： A PCM cell is provided that includes a silver (Ag) doped Ge2Sb2Te5 (GST) alloy layer as the PCM material. The PCM cell containing the Ag doped GST alloy layer exhibits a reduced reset state resistance drift as compared to an equivalent PCM cell in which a non-Ag doped GST alloy layer is used. In some embodiments and depending on the Ag dopant concentration of the Ag doped GST alloy layer, a constant reset state resistance or even a negative reset state resistance drift can be obtained.
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公开(公告)号：US10896993B2
公开(公告)日：2021-01-19
申请号：US16381511
申请日：2019-04-11
发明人： Jianshi Tang , Ning Li , Qing Cao
IPC分类号： H01L31/18 , H04B10/11 , H01L33/58 , H01L31/0232 , H01L33/00
摘要： A method and an apparatus are provided. The apparatus includes a three-dimensional semiconductor structure having a spherical array of fixed-position optoelectronic devices arranged over a relaxed elastomer by a controlled unbuckling process that orients the fixed-position optoelectronic devices to face in different directions in the spherical array to communicate in the different directions without motion of the apparatus and the fixed-position optoelectronic devices of the apparatus.
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公开(公告)号：US10886328B1
公开(公告)日：2021-01-05
申请号：US16699792
申请日：2019-12-02
发明人： Ning Li , Ko-Tao Lee , Shawn Xiaofeng Du
摘要： An approach to forming a full color micro-display that includes using a plurality of micro-light emitting diodes formed in a silicon on insulator substrate, where the plurality of micro-light emitting diodes include a plurality of red micro-light emitting diodes, a plurality of green micro-light emitting diodes, and a plurality of blue micro-light emitting diodes. Additionally, the approach includes forming a plurality of transistor devices in the silicon on insulator substrate, wherein each transistor device of the plurality of transistor devices acts as a switch connecting to a micro-light emitting diode of the plurality of micro-light emitting diodes.
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公开(公告)号：US10758464B2
公开(公告)日：2020-09-01
申请号：US15824276
申请日：2017-11-28
发明人： Talia S. Gershon , Ning Li , Devendra Sadana , Teodor K. Todorov
IPC分类号： A61K8/27 , A61Q17/04 , A61K8/26 , A61K8/29 , A61K8/19 , A61K8/84 , C09C3/10 , A61K8/81 , A61K8/21 , A61K8/25 , A61K8/72 , C09C1/04
摘要： Zinc oxide compositions and methods for applying anti-reflective coating on oxide particles for sunscreen applications are provided herein. A method includes selecting one or more coating materials to be applied to zinc oxide particles in a sunscreen composition, wherein selecting is based on optical properties of the coating materials, wherein the optical properties comprises at least the refractive index of each of the coating materials, and applying the selected coating materials to the zinc oxide particles to create the sunscreen composition.
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公开(公告)号：US20200161501A1
公开(公告)日：2020-05-21
申请号：US16194177
申请日：2018-11-16
发明人： Ning Li , Kevin Han , Devendra K. Sadana
摘要： The present invention is a small, highly efficient, Low Power-Light Emitting Diode (LP-LED) that operates at low power, currents, and voltages. The LP-LED has a first and second cladding layer with a narrow emissions layer disposed between. A valence quantum well and a conduction quantum well form within the emissions layer. Materials are chosen so that either the valence quantum well or the conduction quantum well has a potential depth much larger than the other quantum well. In some preferred embodiments, the cladding material is chosen to have a low non-radiative recombination rate.
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