公开(公告)号：US07652740B2

公开(公告)日：2010-01-26

申请号：US10608085

申请日：2003-06-30

申请人： Yong-Sup Hwang ,  Gee-Sung Chae ,  Gyoo-Chul Jo

发明人： Yong-Sup Hwang ,  Gee-Sung Chae ,  Gyoo-Chul Jo

IPC分类号： G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： The present invention is an array substrate for use in a liquid crystal display device, which includes a first double-layered metal structure and a second double-layered metal structure. The first double-layered metal structure includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer and a first copper layer. The second double-layered metal structure includes a data line, source and drain electrodes, a capacitor electrode, and a data pad electrode, wherein all of the data line, the source and drain electrodes, the capacitor electrode and the data pad electrode have a second barrier metal layer and a second copper layer.

摘要翻译： 本发明是用于液晶显示装置的阵列基板，其包括第一双层金属结构和第二双层金属结构。 第一双层金属结构包括在基板上的栅电极，栅极线和栅极焊盘电极，其中所有栅电极，栅极线和栅极焊盘电极都具有第一阻挡金属层和第一铜层 。 第二双层金属结构包括数据线，源极和漏极，电容器电极和数据焊盘电极，其中数据线，源极和漏极，电容器电极和数据焊盘电极中的全部具有 第二阻挡金属层和第二铜层。

公开(公告)号：US20090233391A1

公开(公告)日：2009-09-17

申请号：US12453050

申请日：2009-04-28

申请人： Gee-Sung Chae ,  Yong-Sup Hwang

发明人： Gee-Sung Chae ,  Yong-Sup Hwang

IPC分类号： H01L21/331

CPC分类号： H01L29/4908 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/458 ,  H01L29/665 ,  Y10S438/945

摘要： A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.

摘要翻译： 液晶显示装置包括多个栅极线和数据线，彼此交叉以限定多个像素区域，多个薄膜晶体管，每个设置在一个像素区域中，并且多个像素电极分别设置 在其中一个像素区域中，其中薄膜晶体管包括至少一个Ti层。

公开(公告)号：US07548284B2

公开(公告)日：2009-06-16

申请号：US12007212

申请日：2008-01-08

申请人： Gee-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

发明人： Gee-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136213

摘要： According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

摘要翻译： 根据实施例，制造方法包括：形成沿着第一方向设置的栅极线和与基板上的栅极线平行的公共线，栅极和公共线彼此间隔开，在栅极上形成栅极绝缘层 和公共线，在栅极绝缘层上形成半导体层，形成透明导电材料的源电极和像素电极，所述像素电极包括漏电极部分，所述漏电极部分与所述半导体层重叠，形成钝化层，所述钝化层包括 第一接触孔和开口部分，所述第一接触孔分别暴露所述源极电极和所述开放部分，暴露所述像素电极，并且形成沿所述钝化层沿着第二方向布置的数据线，所述数据线连接到所述源极 电极通过第一接触孔并与栅极线交叉。

公开(公告)号：US07416681B2

公开(公告)日：2008-08-26

申请号：US10732346

申请日：2003-12-11

申请人： Seong-Su Kim ,  Yong-Suk Choi ,  Gee-Sung Chae ,  Gyoo-Chul Jo ,  Oh-Nam Kwon ,  Kyoung-Mook Lee ,  Yong-Sup Hwang ,  Seung-Yong Lee

发明人： Seong-Su Kim ,  Yong-Suk Choi ,  Gee-Sung Chae ,  Gyoo-Chul Jo ,  Oh-Nam Kwon ,  Kyoung-Mook Lee ,  Yong-Sup Hwang ,  Seung-Yong Lee

IPC分类号： C09K13/00

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134

摘要： An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

摘要翻译： 用于多层铜和钼的蚀刻溶液包括：约5％至约30％重量的过氧化氢; 约0.5重量％至约5重量％的有机酸; 约0.2重量％至约5重量％的磷酸盐; 约0.2重量％至约5重量％的具有氮的第一添加剂; 约0.2重量％至约5重量％的具有氮气的第二添加剂; 约0.01重量％至约1.0重量％的氟化合物; 和去离子水，使总量的蚀刻溶液100重量％。

公开(公告)号：US20070010039A1

公开(公告)日：2007-01-11

申请号：US11203146

申请日：2005-08-15

申请人： Gee-Sung Chae ,  Jae-Yong Park ,  Ock-Hee Kim

发明人： Gee-Sung Chae ,  Jae-Yong Park ,  Ock-Hee Kim

IPC分类号： H01L21/84

CPC分类号： H01L27/3276 ,  G09G3/32 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  H01L27/3251

摘要： An organic electroluminescent device includes a substrate, a plurality of gate lines on the substrate, a plurality of data lines on the substrate, each of the plurality of data lines crossing the gate lines, a plurality of switching elements and driving elements interconnected on the substrate, and a power line disposed in parallel to the data lines on the substrate, wherein the power line is electrically connected to at least two of the plurality of driving elements.

公开(公告)号：US06998770B2

公开(公告)日：2006-02-14

申请号：US10330258

申请日：2002-12-30

申请人： Gee-Sung Chae ,  Jae-Yong Park ,  Ock-Hee Kim

发明人： Gee-Sung Chae ,  Jae-Yong Park ,  Ock-Hee Kim

IPC分类号： H01J1/62 ,  H05B33/00

CPC分类号： H01L27/3276 ,  G09G3/32 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  H01L27/3251

摘要： An organic electroluminescent device includes a substrate, a plurality of gate lines on the substrate, a plurality of data lines on the substrate, each of the plurality of data lines crossing the gate lines, a plurality of switching elements and driving elements interconnected on the substrate, and a power line disposed in parallel to the data lines on the substrate, wherein the power line is electrically connected to at least two of the plurality of driving elements.

摘要翻译： 有机电致发光器件包括衬底，衬底上的多条栅极线，衬底上的多条数据线，与栅极线交叉的多条数据线中的每条数据线，在衬底上互连的多个开关元件和驱动元件 以及与所述基板上的数据线平行设置的电力线，其中所述电力线与所述多个驱动元件中的至少两个电连接。

公开(公告)号：US08426869B2

公开(公告)日：2013-04-23

申请号：US12721124

申请日：2010-03-10

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

摘要： A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

摘要翻译： 薄膜晶体管包括：衬底上的硅纳米线，所述硅纳米线具有中心部分和所述中心部分的两个侧部; 中心部分上的栅电极; 以及源极电极和漏极电极，分别与两个侧部分上的源电极间隔开，源电极和漏电极分别与硅纳米线电连接。

公开(公告)号：US08384075B2

公开(公告)日：2013-02-26

申请号：US13495583

申请日：2012-06-13

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/08

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08216889B2

公开(公告)日：2012-07-10

申请号：US13240391

申请日：2011-09-22

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US08039063B2

公开(公告)日：2011-10-18

申请号：US12821090

申请日：2010-06-22

申请人： Gee-Sung Chae

发明人： Gee-Sung Chae

IPC分类号： C09K19/00

CPC分类号： G02F1/133711 ,  B82Y30/00 ,  G02F1/133719 ,  G02F2001/133765 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1014 ,  Y10T428/1059 ,  Y10T428/1086

摘要： A method for fabricating an alignment film is provided. The method includes providing a substrate, forming a plurality of region defining strips at an interval on the substrate, and forming organic alignment strips for aligning liquid crystal molecules between the region defining strips by applying an organic alignment material on the substrate.

摘要翻译： 提供了一种制造取向膜的方法。 该方法包括提供衬底，在衬底上以间隔形成限定条的多个区域，以及形成有机取向条，用于通过在衬底上施加有机取向材料来在区域限定条之间对准液晶分子。