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公开(公告)号：US11117798B2
公开(公告)日：2021-09-14
申请号：US16270219
申请日：2019-02-07
Applicant: Infineon Technologies AG
Inventor： Gunar Lorenz , Alfons Dehe , Marc Fueldner , Bernd Goller , Ulrich Krumbein , Andreas Wiesbauer
Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.
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公开(公告)号：US20200039820A1
公开(公告)日：2020-02-06
申请号：US16595532
申请日：2019-10-08
Applicant: Infineon Technologies AG
Inventor： Claus Waechter , Edward Fuergut , Bernd Goller , Michael Ledutke , Dominic Maier
Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
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公开(公告)号：US10549985B2
公开(公告)日：2020-02-04
申请号：US15692938
申请日：2017-08-31
Applicant: Infineon Technologies AG
Inventor： Dominic Maier , Matthias Steiert , Chau Fatt Chiang , Christian Geissler , Bernd Goller , Thomas Kilger , Johannes Lodermeyer , Franz-Xaver Muehlbauer , Chee Yang Ng , Beng Keh See , Claus Waechter
Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
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公开(公告)号：US10435292B2
公开(公告)日：2019-10-08
申请号：US15651522
申请日：2017-07-17
Applicant: Infineon Technologies AG
Inventor： Claus Waechter , Edward Fuergut , Bernd Goller , Michael Ledutke , Dominic Maier
Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
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公开(公告)号：US20190270637A1
公开(公告)日：2019-09-05
申请号：US16270315
申请日：2019-02-07
Applicant: Infineon Technologies AG
Inventor： Marc Fueldner , Niccolo De Milleri , Bernd Goller , Ulrich Krumbein , Gerhard Lohninger , Giordano Tosolini , Andreas Wiesbauer
Abstract: A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.
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Patent Agency Ranking
公开(公告)号：US20180366424A1
公开(公告)日：2018-12-20
申请号：US15628365
申请日：2017-06-20
Applicant: Infineon Technologies AG
Inventor： Pedro Augusto Borrego Lambin Torres Amaral , Ewa Brox-Napieralska , Bernd Goller , Andreas Wiesbauer
Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.
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公开(公告)号：US12063474B2
公开(公告)日：2024-08-13
申请号：US17660239
申请日：2022-04-22
Applicant: Infineon Technologies AG
Inventor： Paul Westmarland , Bernd Goller , Scott Palmer , Mark Pavier
CPC classification number: H04R19/04 , H04R7/06 , H04R7/18 , H04R2201/003 , H04R2307/025
Abstract: A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.
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公开(公告)号：US20210323813A1
公开(公告)日：2021-10-21
申请号：US17357146
申请日：2021-06-24
Applicant: Infineon Technologies AG
Inventor： Gunar Lorenz , Alfons Dehe , Marc Fueldner , Bernd Goller , Ulrich Krumbein , Andreas Wiesbauer
Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.
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公开(公告)号：US10793419B2
公开(公告)日：2020-10-06
申请号：US16270315
申请日：2019-02-07
Applicant: Infineon Technologies AG
Inventor： Marc Fueldner , Niccolo De Milleri , Bernd Goller , Ulrich Krumbein , Gerhard Lohninger , Giordano Tosolini , Andreas Wiesbauer
Abstract: A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.
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公开(公告)号：US10377626B2
公开(公告)日：2019-08-13
申请号：US15957349
申请日：2018-04-19
Applicant: Infineon Technologies AG
Inventor： Bernd Goller , Matthias Steiert
Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.
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