公开(公告)号：US20210118986A1

公开(公告)日：2021-04-22

申请号：US17111551

申请日：2020-12-04

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

公开(公告)号：US20200161433A1

公开(公告)日：2020-05-21

申请号：US16354973

申请日：2019-03-15

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Anton Mauder ,  Andreas Meiser ,  Bernd Zippelius

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66

Abstract: Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and non-linear junctions formed with the SiC material at the bottom of other gate trenches. In other embodiments, the SiC device has the shielding regions at the bottom of the gate trenches and arranged in rows which run in a direction transverse to a lengthwise extension of the trenches. In still other embodiments, the SiC device has the shielding regions and the non-linear junctions, and wherein the shielding regions are arranged in rows which run in a direction transverse to a lengthwise extension of the trenches.

公开(公告)号：US20190165159A1

公开(公告)日：2019-05-30

申请号：US16197151

申请日：2018-11-20

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Rudolf Elpelt ,  Roland Rupp ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417

Abstract: A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.

公开(公告)号：US20190131447A1

公开(公告)日：2019-05-02

申请号：US16171911

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Rudolf Elpelt ,  Roland Rupp ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L21/04 ,  H01L29/861 ,  H01L29/66 ,  H01L29/06

Abstract: In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.

公开(公告)号：US20170345905A1

公开(公告)日：2017-11-30

申请号：US15162716

申请日：2016-05-24

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/423 ,  H01L29/739 ,  H01L29/20 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/4236 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7827

Abstract: A semiconductor device includes trench gate structures extending from a first surface into a semiconductor body from a wide-bandgap semiconductor material. The trench gate structures separate mesa portions of the semiconductor body from each other. In the mesa portions, body regions form first pn junctions with a drain structure and directly adjoin first mesa sidewalls. Source regions in the mesa portions form second pn junctions with the body regions, wherein the body regions separate the source regions from the drain structure. The source regions directly adjoin the first mesa sidewalls and second mesa sidewalls opposite to the first mesa sidewalls.

公开(公告)号：US20250096149A1

公开(公告)日：2025-03-20

申请号：US18885846

申请日：2024-09-16

Applicant: Infineon Technologies AG

Inventor： Rudolf Elpelt ,  Francisco Javier Santos Rodriguez ,  Bernd Zippelius ,  Antonio Vellei ,  Alexander Breymesser

IPC: H01L23/544 ,  H01L21/04 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device includes a single-crystalline silicon carbide portion with a first surface, an opposite second surface, and a third surface extending from the first surface in a direction of the second surface. Along the third surface, hydrogen atoms and/or atoms of one or more nonmetal elements other than silicon and having an atomic number greater than six saturate dangling bonds of the silicon carbide portion and/or a passivating coating is in direct contact with the third surface. The semiconductor device further includes a glass structure and an interface layer structure between the third surface and the glass structure.

公开(公告)号：US11063144B2

公开(公告)日：2021-07-13

申请号：US16361696

申请日：2019-03-22

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/417 ,  H01L29/32 ,  H01L29/872 ,  H01L29/861 ,  H01L29/04

Abstract: A semiconductor component includes a SiC semiconductor body. A drift zone of a first conductivity type and a semiconductor region are formed in the SiC semiconductor body. Barrier structures extending from the semiconductor region into the drift zone differ from the gate structures.

公开(公告)号：US10896952B2

公开(公告)日：2021-01-19

申请号：US16797463

申请日：2020-02-21

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

公开(公告)号：US10700182B2

公开(公告)日：2020-06-30

申请号：US15979050

申请日：2018-05-14

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: G06F30/398 ,  H01L29/66 ,  H01L29/739 ,  H01L27/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/861 ,  H01L21/66

Abstract: By using at least one of a processor device and model transistor cells, a set of design parameters for at least one of a transistor cell and a drift structure of a wide band-gap semiconductor device is determined, wherein an on state failure-in-time rate and an off state failure-in-time rate of a gate dielectric of the transistor cell are within a same order of magnitude for a predefined on-state gate-to-source voltage, a predefined off-state gate-to-source voltage, and a predefined off-state drain-to-source voltage.

公开(公告)号：US10586845B1

公开(公告)日：2020-03-10

申请号：US16193296

申请日：2018-11-16

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: According to an embodiment of a semiconductor device, the device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of source regions of a first conductivity type are formed in the SiC substrate and extend lengthwise in parallel in a second direction which is transverse to the first direction. Rows of body regions of a second conductivity type opposite the first conductivity type are formed in the SiC substrate below the rows of source regions. Rows of body contact regions of the second conductivity type are formed in the SiC substrate. The rows of body contact regions extend lengthwise in parallel in the second direction. First shielding regions of the second conductivity type are formed deeper in the SiC substrate than the rows of body regions.