Silicon Carbide Device and a Method for Manufacturing A Silicon Carbide Device
    13.
    发明申请
    Silicon Carbide Device and a Method for Manufacturing A Silicon Carbide Device 有权
    碳化硅器件和制造碳化硅器件的方法

    公开(公告)号:US20150008447A1

    公开(公告)日:2015-01-08

    申请号:US13933686

    申请日:2013-07-02

    Abstract: A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region.

    Abstract translation: 碳化硅器件包括在外延碳化硅层内具有第一导电类型和掩埋侧向碳化硅边缘终止区的外延碳化硅层并且具有第二导电类型。 掩埋的横向碳化硅边缘终止区域被碳化硅表面层覆盖,该碳化硅表面层包括掺杂过渡金属的离子,或者与埋入的侧向碳化硅边缘的固有点缺陷的密度相比包括增加的本征点缺陷密度 终止区域。

    METHOD FOR MANUFACTURING A SILICON CARBIDE SUBSTRATE FOR AN ELECTRICAL SILICON CARBIDE DEVICE, A SILICON CARBIDE SUBSTRATE AND AN ELECTRICAL SILICON CARBIDE DEVICE
    14.
    发明申请
    METHOD FOR MANUFACTURING A SILICON CARBIDE SUBSTRATE FOR AN ELECTRICAL SILICON CARBIDE DEVICE, A SILICON CARBIDE SUBSTRATE AND AN ELECTRICAL SILICON CARBIDE DEVICE 审中-公开
    用于制造用于电子碳化硅器件的碳化硅衬底的方法,碳化硅衬底和电子碳化硅器件

    公开(公告)号:US20140264374A1

    公开(公告)日:2014-09-18

    申请号:US13827253

    申请日:2013-03-14

    CPC classification number: H01L21/02529 H01L21/76254 H01L29/1608

    Abstract: A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy characteristic forming an implant zone within the epitaxial layer, so that the ions are implanted with an average depth within the epitaxial layer corresponding to a designated thickness of an epitaxial layer of the silicon carbide substrate to be manufactured. Furthermore, the method comprises bonding an acceptor wafer onto the epitaxial layer so that the epitaxial layer is arranged between the dispenser wafer and the acceptor wafer. Further, the epitaxial layer is split along the implant zone so that a silicon carbide substrate represented by the acceptor wafer with an epitaxial layer with the designated thickness is obtained.

    Abstract translation: 一种用于制造用于电碳化硅器件的碳化硅衬底的方法包括提供包括硅面和碳面的碳化硅分配器晶片,并在硅表面上沉积碳化硅外延层。 此外,该方法包括以预定的能量特性注入离子,在外延层内形成注入区,使得离子注入到外延层内的对应于碳化硅衬底外延层的指定厚度的平均深度, 制造。 此外,该方法包括将受体晶片结合到外延层上,使得外延层布置在分配器晶片和受主晶片之间。 此外,外延层沿着注入区域分裂,从而获得由具有指定厚度的外延层的受主晶片表示的碳化硅衬底。

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