公开(公告)号：US20150380309A1

公开(公告)日：2015-12-31

申请号：US14315718

申请日：2014-06-26

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Salil Mujumdar ,  Amol Joshi ,  Kevin Kashefi ,  Albert Sanghyup Lee ,  Abhijit Pethe ,  Bin Yang

IPC: H01L21/768 ,  H01L23/535

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/285 ,  H01L21/76834 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metal-insulator-semiconductor (MIS) contacts for germanium and its alloys include insulator layers of oxygen-deficient metal oxide deposited by atomic layer deposition (ALD). The oxygen deficiency reduces the tunnel barrier resistance of the insulator layer while maintaining the layer's ability to prevent Fermi-level pinning at the metal/semiconductor interface. The oxygen deficiency is controlled by optimizing one or more ALD parameters such as shortened oxidant pulses, use of less-reactive oxidants such as water, heating the substrate during deposition, TMA “cleaning” of native oxide before deposition, and annealing after deposition. Secondary factors include reduced process-chamber pressure, cooled oxidant, and shortened pulses of the metal precursor.

Abstract translation: 用于锗及其合金的金属 - 绝缘体 - 半导体（MIS）触点包括通过原子层沉积（ALD）沉积的缺氧金属氧化物的绝缘体层。 缺氧会降低绝缘体层的隧道势垒阻力，同时保持层在金属/半导体界面处防止费米能级钉扎的能力。 通过优化一个或多个ALD参数，例如缩短的氧化剂脉冲，使用较少反应性的氧化剂例如水，在沉积期间加热衬底，在沉积之前对自然氧化物进行TMA“清洁”，以及沉积后的退火来优化一个或多个ALD参数来控制氧缺乏。 次要因素包括降低的处理室压力，冷却的氧化剂和金属前体的缩短的脉冲。

公开(公告)号：US09224644B2

公开(公告)日：2015-12-29

申请号：US13726972

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Amol Joshi ,  Chi-I Lang ,  Salil Mujumdar

IPC: H01L21/768 ,  C23C14/58 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/3215 ,  H01J37/32 ,  H01L21/28 ,  H01L29/51 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66

CPC classification number: H01L21/76886 ,  C23C14/5826 ,  C23C16/45536 ,  H01J37/32357 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3215 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68792 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 远程等离子体源可用于提供等离子体表面处理或作为将掺杂剂掺入预沉积层的源。

公开(公告)号：US20140162384A1

公开(公告)日：2014-06-12

申请号：US13706648

申请日：2012-12-06

Applicant: INTERMOLECULAR INC.

Inventor： Amol Joshi

IPC: H01L21/66

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L22/20

Abstract: A substrate is provided wherein the substrate includes a number of site-isolated regions (SIRs). At least one material is deposited using PVD on a sub-set of the SIRs. At least one of the material or the process conditions are varied in a combinatorial manner across the sub-set of SIRs. Next, at least one material is deposited using ALD on a sub-set of the SIRs. At least one of the material or the process conditions are varied in a combinatorial manner across the sub-set of SIRs. Next, a material is deposited across the entire substrate using CVD. Each device within each of the SIRs is evaluated for at least one of an electric property or a material property.

Abstract translation: 提供了一种衬底，其中衬底包括许多位置隔离区域（SIR）。 在SIR的子集上使用PVD沉积至少一种材料。 材料或工艺条件中的至少一个以跨组合的SIR组合的方式变化。 接下来，使用ALD在SIR的子集上沉积至少一种材料。 材料或工艺条件中的至少一个以跨组合的SIR组合的方式变化。 接下来，使用CVD将材料沉积在整个基板上。 对每个SIR中的每个设备进行电特性或材料特性中的至少一个的评估。