公开(公告)号：US10794728B2

公开(公告)日：2020-10-06

申请号：US15798348

申请日：2017-10-30

Applicant: INVENSENSE, INC.

Inventor： Wesley James Emmanouel Teskey ,  Nim Hak Tea ,  Bongsang Kim ,  Chunchieh Huang

IPC: G01C25/00 ,  G01C19/5776 ,  G01D18/00 ,  B81B7/00

Abstract: A device and method for a MEMS device with at least one sensor is disclosed. A thermal element is disposed in the MEMS device to selectively adjust a temperature of the MEMS device. A calibration operation is initiated for the sensor to determine a correction value to be applied to the sensor measurement based on the temperature. The correction value is stored.

公开(公告)号：US20190330052A1

公开(公告)日：2019-10-31

申请号：US16504999

申请日：2019-07-08

Applicant: INVENSENSE, INC.

Inventor： Daesung Lee ,  Jeff Chunchieh Huang ,  Jongwoo Shin ,  Bongsang Kim ,  Logeeswaran Veerayah Jayaraman

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  B81B7/02

Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

公开(公告)号：US20190262865A1

公开(公告)日：2019-08-29

申请号：US16269892

申请日：2019-02-07

Applicant: INVENSENSE, INC.

Inventor： Emad Mehdizadeh ,  Bongsang Kim ,  Chienliu Chang ,  Leonardo Baldasarre ,  Nikhil Apte ,  Xiaoyue Jiang ,  Mei-Lin Chan

IPC: B06B1/06 ,  H01L41/04 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29 ,  H01L41/332 ,  H01L41/313 ,  B06B1/02

Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

公开(公告)号：US10384930B2

公开(公告)日：2019-08-20

申请号：US15497676

申请日：2017-04-26

Applicant: InvenSense, Inc.

Inventor： Daesung Lee ,  Jeff Chunchieh Huang ,  Jongwoo Shin ,  Bongsang Kim ,  Logeeswaran Veerayah Jayaraman

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/02

Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

公开(公告)号：US20190185317A1

公开(公告)日：2019-06-20

申请号：US16206861

申请日：2018-11-30

Applicant: INVENSENSE, INC.

Inventor： Jongwoo Shin ,  Houri Johari-Galle ,  Bongsang Kim ,  Joseph Seeger ,  Dongyang Kang

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81C1/00523 ,  B81C2203/0785

Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

公开(公告)号：US10308507B2

公开(公告)日：2019-06-04

申请号：US15298499

申请日：2016-10-20

Applicant: InvenSense, Inc.

Inventor： Jong Ii Shin ,  Peter Smeys ,  Bongsang Kim

IPC: H01L21/02 ,  H01L29/84 ,  H01L23/02 ,  B81C1/00 ,  B81B3/00 ,  H01L41/31 ,  B81B7/00 ,  B81B7/02

Abstract: Provided herein is a method including forming a cavity in a first side of a first silicon wafer. An oxide layer is formed on the first side and in the cavity. The first side of the first silicon wafer is bonded to a first side of a second silicon wafer, and a gap control structure is deposited on a second side of the second silicon wafer. A MEMS structure is formed in the second silicon wafer. The second side of the second silicon wafer is eutecticly bonded to the third silicon wafer, and the eutectic bonding includes pressing the second silicon wafer to the third silicon wafer.