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16 条记录 (耗时 0.015 秒)

    ELECTRODE LAYER PARTITIONING
    2.
    发明申请
    ELECTRODE LAYER PARTITIONING 有权

    公开(公告)号：US20220144624A1

    公开(公告)日：2022-05-12

    申请号：US17583860

    申请日：2022-01-25

    申请人： InvenSense, Inc.

    发明人： Alexander Castro ,  Matthew Thompson ,  Leonardo Baldasarre ,  Sarah Nitzan ,  Houri Johari-Galle

    IPC分类号： B81B3/00 ,  G01P15/125

    摘要： A MEMS sensor includes a proof mass that is suspended over a substrate. A sense electrode is located on a top surface of the substrate parallel to the proof mass, and forms a capacitor with the proof mass. The sense electrodes have a plurality of slots that provide improved performance for the MEMS sensor. A measured value sensed by the MEMS sensor is determined based on the movement of the proof mass relative to the slotted sense electrode.

    SENSOR MISALIGNMENT MEASURING DEVICE
    4.
    发明申请
    SENSOR MISALIGNMENT MEASURING DEVICE 审中-公开

    公开(公告)号：US20200158489A1

    公开(公告)日：2020-05-21

    申请号：US16750650

    申请日：2020-01-23

    申请人： INVENSENSE, INC.

    发明人： Ilya Gurin ,  Leonardo Baldasarre

    IPC分类号： G01B7/31 ,  H01L21/66 ,  G01B7/00 ,  G01B7/305

    摘要： The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

    SENSOR MISALIGNMENT MEASURING METHOD AND DEVICE
    6.
    发明申请
    SENSOR MISALIGNMENT MEASURING METHOD AND DEVICE 审中-公开

    公开(公告)号：US20190113327A1

    公开(公告)日：2019-04-18

    申请号：US15783792

    申请日：2017-10-13

    申请人： INVENSENSE, INC.

    发明人： Ilya Gurin ,  Leonardo Baldasarre

    IPC分类号： G01B7/31

    摘要： The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

    Sensor misalignment measuring device
    7.
    发明授权
    Sensor misalignment measuring device 有权

    公开(公告)号：US11543229B2

    公开(公告)日：2023-01-03

    申请号：US17225464

    申请日：2021-04-08

    申请人： INVENSENSE, INC.

    发明人： Ilya Gurin ,  Leonardo Baldasarre

    IPC分类号： G01B7/31 ,  G01B7/00 ,  G01B7/305 ,  H01L21/66 ,  G01D5/241

    摘要： The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

    SENSOR MISALIGNMENT MEASURING DEVICE
    8.
    发明申请
    SENSOR MISALIGNMENT MEASURING DEVICE 有权

    公开(公告)号：US20210223024A1

    公开(公告)日：2021-07-22

    申请号：US17225464

    申请日：2021-04-08

    申请人： INVENSENSE, INC.

    发明人： Ilya Gurin ,  Leonardo Baldasarre

    IPC分类号： G01B7/31 ,  G01B7/305 ,  G01B7/00 ,  H01L21/66

    摘要： The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.