MEMS device and process for RF and low resistance applications

    公开(公告)号:US09617141B2

    公开(公告)日:2017-04-11

    申请号:US14800604

    申请日:2015-07-15

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Differential sensing acoustic sensor
    15.
    发明授权
    Differential sensing acoustic sensor 有权
    差分感应传感器

    公开(公告)号:US09344808B2

    公开(公告)日:2016-05-17

    申请号:US14218561

    申请日:2014-03-18

    Abstract: A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.

    Abstract translation: MEMS器件包括耦合到第二板的第一板和形成在第一衬底上的固定的第三板。 在第一板的表面上存在声压差的情况下,第一和第二板被移位。 MEMS器件还包括形成在第三板上的第一电极和形成在第二衬底上的第二电极。 第一,第二板和第三板被包含在由第一和第二基板形成的外壳中。 该装置包括用于将第一板暴露于环境的声学端口。 MEMS器件还包括形成在第二和第三板之间的第一间隙和形成在第二板和第二电极之间的第二间隙。 第二板的位移导致第一间隙与第二间隙成反比变化。

Patent Agency Ranking