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    MEMS acoustic sensor with integrated back cavity
    2.
    发明授权
    MEMS acoustic sensor with integrated back cavity 有权
    具有集成后腔的MEMS声学传感器

    公开(公告)号：US09428379B2

    公开(公告)日：2016-08-30

    申请号：US14174639

    申请日：2014-02-06

    Applicant: InvenSense, Inc.

    Inventor： Erhan Polatkan Ata ,  Martin Lim ,  Xiang Li ,  Stephen Lloyd ,  Michael Julian Daneman

    IPC: H01L29/82 ,  B81B7/00 ,  H04R19/00 ,  B81B3/00

    CPC classification number: B81B7/0061 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2207/012 ,  H04R19/005

    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板，其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板，第二板，连杆和锚固件都包含在由第一基板和第二基板形成的外壳中，其中第一和第二基板中的一个包含通孔，以将第一板的第一表面暴露于 环境。

    MEMS device and process for RF and low resistance applications
    3.
    发明授权
    MEMS device and process for RF and low resistance applications 有权

    公开(公告)号：US10508022B2

    公开(公告)日：2019-12-17

    申请号：US15477193

    申请日：2017-04-03

    Applicant: INVENSENSE, INC.

    Inventor： Michael J. Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

    IPC: B81B3/00 ,  B81C3/00

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Piezoelectric acoustic resonator based sensor
    4.
    发明授权
    Piezoelectric acoustic resonator based sensor 有权

    公开(公告)号：US09618405B2

    公开(公告)日：2017-04-11

    申请号：US14453326

    申请日：2014-08-06

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Julius Ming-Lin Tsai ,  Xiang Li ,  Mike Daneman

    IPC: G06F3/043 ,  H03K17/96 ,  G01L1/16

    CPC classification number: G01L1/165 ,  G06F3/0436 ,  H03K17/96 ,  H03K17/9643 ,  H03K2217/96003

    Abstract: A piezoelectric acoustic resonator based sensor is presented herein. A device can include an array of piezoelectric transducers and an array of cavities that has been attached to the array of piezoelectric transducers to form an array of resonators. A resonator of the array of resonators can be associated with a first frequency response corresponding to a first determination that the resonator has been touched, and a second frequency response corresponding to a second determination that the resonator has not been touched. The array of piezoelectric transducers can include a piezoelectric material; a first set of electrodes that has been formed a first side of the piezoelectric material; and a second set of electrodes that has been formed on second side of the piezoelectric material.

    MEMS device and process for RF and low resistance applications
    6.
    发明授权
    MEMS device and process for RF and low resistance applications 有权

    公开(公告)号：US10160635B2

    公开(公告)日：2018-12-25

    申请号：US15477202

    申请日：2017-04-03

    Applicant: INVENSENSE, INC.

    Inventor： Michael J. Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

    IPC: H01L29/84 ,  B81B3/00 ,  B81C3/00

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR
    8.
    发明申请
    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR 有权
    基于压电声学谐振器的传感器

    公开(公告)号：US20160041047A1

    公开(公告)日：2016-02-11

    申请号：US14453326

    申请日：2014-08-06

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Julius Ming-Lin Tsai ,  Xiang Li ,  Mike Daneman

    IPC: G01L1/16

    CPC classification number: G01L1/165 ,  G06F3/0436 ,  H03K17/96 ,  H03K17/9643 ,  H03K2217/96003

    Abstract: A piezoelectric acoustic resonator based sensor is presented herein. A device can include an array of piezoelectric transducers and an array of cavities that has been attached to the array of piezoelectric transducers to form an array of resonators. A resonator of the array of resonators can be associated with a first frequency response corresponding to a first determination that the resonator has been touched, and a second frequency response corresponding to a second determination that the resonator has not been touched. The array of piezoelectric transducers can include a piezoelectric material; a first set of electrodes that has been formed a first side of the piezoelectric material; and a second set of electrodes that has been formed on second side of the piezoelectric material.

    Abstract translation: 本文介绍了一种基于压电声谐振器的传感器。 器件可以包括压电换能器的阵列和已经附接到压电换能器阵列以形成谐振器阵列的空腔阵列。 谐振器阵列的谐振器可以与对应于谐振器已被触摸的第一确定的第一频率响应和对应于谐振器未被触摸的第二确定的第二频率响应相关联。 压电换能器阵列可包括压电材料; 已经形成为压电材料的第一侧的第一组电极; 以及已经形成在压电材料的第二侧上的第二组电极。

    MEMS device and process for RF and low resistance applications
    9.
    发明授权
    MEMS device and process for RF and low resistance applications 有权
    用于RF和低电阻应用的MEMS器件和工艺

    公开(公告)号：US09114977B2

    公开(公告)日：2015-08-25

    申请号：US13687304

    申请日：2012-11-28

    Applicant: InvenSense, Inc.

    Inventor： Michael J. Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

    IPC: H01L29/87 ,  B81C3/00 ,  B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2207/07 ,  B81C3/001 ,  B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面，MEMS器件包括MEMS晶片，其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层，第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极，使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    MEMS acoustic sensor with integrated back cavity
    10.
    发明授权
    MEMS acoustic sensor with integrated back cavity 有权
    具有集成后腔的MEMS声学传感器

    公开(公告)号：US08692340B1

    公开(公告)日：2014-04-08

    申请号：US13800061

    申请日：2013-03-13

    Applicant: InvenSense, Inc.

    Inventor： Erhan Polatkan Ata ,  Martin Lim ,  Xiang Li ,  Stephen Lloyd ,  Michael Julian Daneman

    IPC: H01L29/82

    CPC classification number: B81B7/0061 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2207/012 ,  H04R19/005

    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板，其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板，第二板，连杆和锚固件都包含在由第一基板和第二基板形成的外壳中，其中第一和第二基板中的一个包含通孔，以将第一板的第一表面暴露于 环境。

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