-
公开(公告)号：US20120074433A1
公开(公告)日：2012-03-29
申请号：US13074259
申请日：2011-03-29
申请人： Lihua Zhao , Hao Luo , Carl P. Taussig , James A. Brug , Richard E. Elder , Warren Jackson , Ping Mei
发明人： Lihua Zhao , Hao Luo , Carl P. Taussig , James A. Brug , Richard E. Elder , Warren Jackson , Ping Mei
CPC分类号： H01L51/0024 , H01L27/156
摘要： An electronic apparatus is provided that includes a number of first components on a first substrate and a number of second components on a second substrate. A lamination material that includes a conducting material is placed between the first components and the second components. Any one first component can couple to a varied subset of second components.
摘要翻译： 提供一种电子设备，其包括第一基板上的多个第一部件和第二基板上的多个第二部件。 包括导电材料的层压材料被放置在第一部件和第二部件之间。 任何一个第一组件可以耦合到第二组件的不同子集。
-
12.发明授权Method of fabricating an MRAM device including spin dependent tunneling junction memory cells 有权制造包括自旋相关隧道结存储器单元的MRAM器件的方法公开(公告)号：US06727105B1
公开(公告)日：2004-04-27
申请号：US09514934
申请日：2000-02-28
IPC分类号： H01L2100
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/222 , H01L43/08
摘要： A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.
摘要翻译： 用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。 在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。 被钉扎层的暴露表面可以通过离子蚀刻工艺变平。
-
公开(公告)号：US06205051B1
公开(公告)日：2001-03-20
申请号：US09522269
申请日：2000-03-09
IPC分类号： G11C1114
摘要： A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.
摘要翻译： 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。
-
公开(公告)号：US6134139A
公开(公告)日：2000-10-17
申请号：US363081
申请日：1999-07-28
IPC分类号： H01L27/105 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L43/08 , G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory with enhanced half-select margin includes an array of magnetic memory cells each having a data storage layer with an easy axis and an array of conductors each having an angle of orientation with respect to the easy axes that is preselected to enhance half-select margin in the magnetic memory. The angle of orientation is such that the longitudinal write field is enhanced and the perpendicular write field is minimized in a selected memory cell. The magnetic memory cells optionally includes a structured data storage layer including a control layer that minimizes the likelihood of half-select switching in the unselected magnetic memory cells.
摘要翻译： 具有增强的半选择余量的磁存储器包括磁存储单元的阵列，每个磁存储单元具有易于轴的数据存储层和导体阵列，每个导体阵列相对于容易的轴具有取向角， 在磁存储器中选择余量。 取向角使得纵向写入场增强，并且垂直写入场在选定的存储单元中最小化。 磁存储单元可选地包括结构化数据存储层，其包括使未选择的磁存储单元中的半选择切换的可能性最小化的控制层。
-
公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
-
16.发明授权MRAM device including write circuit for supplying word and bit line current having unequal magnitudes 有权MRAM器件包括用于提供具有不等量幅度的字和位线电流的写电路
公开(公告)号：US6111783A
公开(公告)日：2000-08-29
申请号：US334485
申请日：1999-06-16
申请人： Lung T. Tran , James A. Brug
发明人： Lung T. Tran , James A. Brug
CPC分类号： G11C11/15
摘要： Data is written to a memory cell of a Magnetic Random Access Memory ("MRAM") device by supplying currents having substantially unequal magnitudes to word and bit lines crossing that memory cell. The substantially higher magnitude current may be supplied to the word lines.
摘要翻译： 通过向与该存储单元相交的字和位线提供具有基本上不相等幅度的电流将数据写入磁随机存取存储器（“MRAM”）器件的存储单元。 可以将大幅度更大的电流提供给字线。
-
17.发明授权Improved magnetoresistive transducer with substantially perpendicular easy axis 失效改进的磁阻换能器具有基本垂直的容易轴
公开(公告)号：US5307226A
公开(公告)日：1994-04-26
申请号：US894415
申请日：1992-06-05
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/3954
摘要： A magnetoresistive transducer includes at least one magnetoresistive element having a transverse easy axis. The use of a transverse easy axis prevents magnetic domains from forming in the magnetoresistive elements and results in a noise-free device. Various techniques for producing a transverse easy axis include the use of stress, and a magneto strictive material, during the formation of the element to orient the anisotropy of the element transverse to orient the anisotropy of the element transverse to the element, formation of the element in the presence of a magnetic field, high temperature anneal of the element, or any other method of forming the element with a prebiased state.
摘要翻译： 磁阻换能器包括至少一个具有横向容易轴的磁阻元件。 使用横向易轴防止在磁阻元件中形成磁畴，并导致无噪声的装置。 用于产生横向容易轴的各种技术包括在形成元件期间使用应力和磁致伸缩材料，以横向定向元件的各向异性以定向横向于元件的元件的各向异性，元件的形成 在存在磁场的情况下，元件的高温退火，或以预偏置状态形成元件的任何其它方法。
-
公开(公告)号：US5296987A
公开(公告)日：1994-03-22
申请号：US894389
申请日：1992-06-05
申请人： Thomas C. Anthony , James A. Brug
发明人： Thomas C. Anthony , James A. Brug
CPC分类号： G11B5/3906 , G11B5/3954
摘要： A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.
摘要翻译： 一种用于减少双条磁阻记录头中的巴克豪森噪声的方法。 控制底部导体的形貌，具体来说，轨道边缘处的导体侧壁角度定义为距离衬底平面小于45度。 以这种方式限制导体侧壁轮廓消除了磁畴成核的来源。
-
公开(公告)号：US06424565B1
公开(公告)日：2002-07-23
申请号：US09561317
申请日：2000-04-28
IPC分类号： G11C1114
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
-
公开(公告)号：US06169686A
公开(公告)日：2001-01-02
申请号：US08974925
申请日：1997-11-20
IPC分类号： G11C1114
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.019 秒)
