公开(公告)号：US20110151649A1

公开(公告)日：2011-06-23

申请号：US12961410

申请日：2010-12-06

Applicant: James A. Cooper ,  Xiaokun Wang

Inventor： James A. Cooper ,  Xiaokun Wang

IPC: H01L21/20

CPC classification number: H01L29/7395

Abstract: A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font side of the first semiconductor layer. The substrate is subsequently removed. In some embodiments, one or more additional semiconductor layers may be formed on the back side of the first semiconductor layer after the semiconductor substrate has been removed. Additionally, in some embodiments, a portion of the first semiconductor layer is removed along with the semiconductor substrate. In such embodiments, the first semiconductor layer is subsequently etched to a known thickness. Source regions and device electrodes may be then be formed.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底的前侧形成第一半导体层。 另外的半导体层可以形成在第一半导体层的字体侧上。 随后除去衬底。 在一些实施例中，在去除半导体衬底之后，可以在第一半导体层的背面上形成一个或多个附加的半导体层。 另外，在一些实施例中，第一半导体层的一部分与半导体衬底一起被去除。 在这样的实施例中，第一半导体层随后被蚀刻到已知的厚度。 然后可以形成源区和器件电极。

公开(公告)号：US06579552B1

公开(公告)日：2003-06-17

申请号：US09661102

申请日：2000-09-13

Applicant: Roger R. Myhre ,  Lawrence K. Cooper ,  Jeffrey K. Cooper ,  Daniel L. Peterson ,  James A. Cooper

Inventor： Roger R. Myhre ,  Lawrence K. Cooper ,  Jeffrey K. Cooper ,  Daniel L. Peterson ,  James A. Cooper

IPC: A01F1500

CPC classification number: A01F15/00 ,  A01F15/005 ,  Y10T83/0505

Abstract: The present invention relates to a method for forming a compressed and cut bale of fibrous material, whereby the bale of fibrous material has at least one cut that allows the material to be separated into two distinct and separate layers. The present invention also relates to the compressed and cut fibrous material.

Abstract translation: 本发明涉及一种用于形成压缩和切割的纤维材料包的方法，由此纤维材料束具有至少一个允许将材料分离成两个不同且分离的层的切口。 本发明还涉及压缩和切割的纤维材料。

公开(公告)号：US10208648B1

公开(公告)日：2019-02-19

申请号：US15436233

申请日：2017-02-17

Applicant: James A. Cooper

Inventor： James A. Cooper

IPC: F01P11/06 ,  F02M26/30 ,  F01M5/00 ,  F01P3/20 ,  F01P7/14

Abstract: An engine oil cooler backflush valve assembly is provided as a replacement cap to an engine oil cooler EGR coolant supply cover. The backflush valve assembly includes a main body through which a valve stem is inserted. The valve stem has a bushing threadedly attached thereto which moves the valve stem between first and second positions. A removable cap is provided to cover the backflush valve assembly during normal operation and to be removed during backflush operation. A removable lock can also be used to secure the cap and/or bushing to the main body of the assembly.

公开(公告)号：US09065264B2

公开(公告)日：2015-06-23

申请号：US13980011

申请日：2012-01-17

Applicant: James A. Cooper ,  Hon Man Kuan

Inventor： James A. Cooper ,  Hon Man Kuan

IPC: H02G3/16 ,  H02G1/00 ,  H02G3/14 ,  H02G3/18

CPC classification number: H02G3/16 ,  F21V21/03 ,  H02G1/00 ,  H02G3/14 ,  H02G3/18 ,  H02G3/20 ,  Y10T29/49208

Abstract: The invention provides a mount for installing an electrical fixture to an electrical junction box. The mount includes a support configured for independent attachment to said junction box and said electrical fixture respectively for mounting said fixture to said junction box. The mount further includes at least one electrical quick connect member engaged to said support comprising a first connection element for forming an electrical connection with a electrical wire and a second connection element for forming an electrical connection a fixture electrical wires. The first and second connection elements are electrically connected or connectible together to form an electrical connection between the source wires and the fixture wires.

Abstract translation: 本发明提供了一种用于将电气安装件安装到电接线盒的安装座。 安装座包括支撑件，其构造成用于独立地附接到所述接线盒和所述电气固定件，用于将所述固定件安装到所述接线盒。 该安装件还包括与所述支撑件接合的至少一个电快速连接构件，其包括用于与电线形成电连接的第一连接元件和用于形成固定电线的电连接的第二连接元件。 第一和第二连接元件电连接或连接在一起以在源极线和夹具线之间形成电连接。

公开(公告)号：US08133789B1

公开(公告)日：2012-03-13

申请号：US12463054

申请日：2009-05-08

Applicant: James A. Cooper ,  Maherin Matin

Inventor： James A. Cooper ,  Maherin Matin

IPC: H01L21/336

CPC classification number: H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L29/66068 ,  H01L29/7802 ,  Y10S438/931

Abstract: A silicon carbide power MOSFET having a drain region of a first conductivity type, a base region of a second conductivity type above the drain region, and a source region of the first conductivity type adjacent an upper surface of the base region, the base region including a channel extending from the source region through the base region adjacent a gate interface surface thereof, the channel having a length less than approximately 0.6 μm, and the base region having a doping concentration of the second conductivity type sufficiently high that the potential barrier at the source end of the channel is not lowered by the voltage applied to the drain. The MOSFET includes self-aligned base and source regions as well as self-aligned ohmic contacts to the base and source regions.

Abstract translation: 具有第一导电类型的漏极区域，位于漏极区域之上的第二导电类型的基极区域和与该基极区域的上表面相邻的第一导电类型的源极区域的碳化硅功率MOSFET，所述基极区域包括 从源极区域延伸通过与其栅极界面表面相邻的基极区域的沟道，沟道具有小于约0.6μm的长度，并且具有足够高的第二导电类型的掺杂浓度的基极区域使得在 通道的源极端不被施加到漏极的电压降低。 MOSFET包括自对准的基极和源极区域以及到基极和源极区域的自对准欧姆接触。

公开(公告)号：US06900133B2

公开(公告)日：2005-05-31

申请号：US10247467

申请日：2002-09-18

Applicant: Jeffrey D. Chinn ,  Michael B. Rattner ,  James A. Cooper ,  Rolf A. Guenther

Inventor： Jeffrey D. Chinn ,  Michael B. Rattner ,  James A. Cooper ,  Rolf A. Guenther

IPC: B81C1/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/302

CPC classification number: B81C1/00626 ,  B81B2201/0214 ,  B81B2201/058 ,  B81C99/009 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/3081

Abstract: Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.

Abstract translation: 本文公开了一种在晶体衬底（例如单晶硅衬底）中对不同深度蚀刻特征的易于且良好集成的方法。 该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。 该方法提供了一个互连的，可变深度的储层和通道的系统。 用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。 所得结构可用于各种MEMS应用，包括用于半导体应用的生物医学MEMS和MEMS。

公开(公告)号：US06830950B2

公开(公告)日：2004-12-14

申请号：US10300970

申请日：2002-11-20

Applicant: Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

IPC: H01L2100

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

公开(公告)号：US4841570A

公开(公告)日：1989-06-20

申请号：US48433

申请日：1987-05-11

Applicant: James A. Cooper

Inventor： James A. Cooper

IPC: H04L9/30

CPC classification number: H04L9/3013

Abstract: Method and apparatus are provided for one-way transformation of data according to multiplication and/or exponentiation modulo a prime number. An implementation of the invention permits the one way residue transformation, useful in encryption and similar applications, to be implemented by n-bit computers substantially with no increase in difficulty or complexity over a natural transformation thereby, using a modulus which is a power of two.

Abstract translation: 提供方法和装置，用于根据素数的乘法和/或取幂进行单向数据转换。 本发明的实施方式允许在加密和类似应用中有用的单向残留变换由n位计算机基本上与自然变换相比难以增加难度或复杂度而实现，其中使用的模数为2的幂 。

公开(公告)号：US4344784A

公开(公告)日：1982-08-17

申请号：US238769

申请日：1981-02-27

Applicant: Peter C. Deckas ,  James A. Cooper ,  James V. Leebens, Jr.

Inventor： Peter C. Deckas ,  James A. Cooper ,  James V. Leebens, Jr.

IPC: B01D46/10

CPC classification number: B01D46/10 ,  Y10S55/18 ,  Y10S55/31

Abstract: A filter assembly for clean air installations includes a block of high efficiency particulate air (HEPA) filter material adhesively bonded and sealed within an imperforate rigid thin-walled side frame which extends axially beyond the inlet surface of the filter block and thus provides an integral plenum chamber volume as part of a self-contained filter subassembly. The side frame has peripheral cover and supporting flanges at its inlet and outlet ends and can thus be conveniently assembled with and removed from a reusable cover member and cover gasket for the plenum chamber and a reusable perforated outlet grill and one or more peripheral outlet sealing gaskets, all of which constitute parts of a complete filter assembly which can be readily supported by a standard or special ceiling or wall grid or frame assembly.

Abstract translation: 用于清洁空气装置的过滤器组件包括高效颗粒空气（HEPA）过滤材料块，其粘合并密封在无孔刚性薄壁侧框架内，该侧框架轴向延伸超过过滤器块的入口表面，因此提供了一体的集气室 室容积作为自包含过滤器子组件的一部分。 侧框架在其入口端和出口端具有外围盖和支撑凸缘，因此可以方便地与可重复使用的盖构件组装和移除，并且用于用于增压室的盖垫圈和可重复使用的穿孔出口格栅和一个或多个外围出口密封垫圈 所有这些都构成完整的过滤器组件的一部分，其可以容易地由标准或特殊的天花板或墙壁网格或框架组件支撑。